Vetrova, N.; Kuimov, E.; Sinyakin, V.; Meshkov, S.; Makeev, M.; Shashurin, V.
Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel. Sensors 2023, 23, 7977.
https://doi.org/10.3390/s23187977
AMA Style
Vetrova N, Kuimov E, Sinyakin V, Meshkov S, Makeev M, Shashurin V.
Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel. Sensors. 2023; 23(18):7977.
https://doi.org/10.3390/s23187977
Chicago/Turabian Style
Vetrova, Natalia, Evgeny Kuimov, Vladimir Sinyakin, Sergey Meshkov, Mstislav Makeev, and Vasiliy Shashurin.
2023. "Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel" Sensors 23, no. 18: 7977.
https://doi.org/10.3390/s23187977
APA Style
Vetrova, N., Kuimov, E., Sinyakin, V., Meshkov, S., Makeev, M., & Shashurin, V.
(2023). Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel. Sensors, 23(18), 7977.
https://doi.org/10.3390/s23187977