Tung, N.H.; Lee, H.; Dinh, D.K.; Kim, D.-W.; Lee, J.Y.; Eom, G.W.; Kim, H.-U.; Kang, W.S.
Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction. Sensors 2024, 24, 3089.
https://doi.org/10.3390/s24103089
AMA Style
Tung NH, Lee H, Dinh DK, Kim D-W, Lee JY, Eom GW, Kim H-U, Kang WS.
Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction. Sensors. 2024; 24(10):3089.
https://doi.org/10.3390/s24103089
Chicago/Turabian Style
Tung, Nguyen Hoang, Heesoo Lee, Duy Khoe Dinh, Dae-Woong Kim, Jin Young Lee, Geon Woong Eom, Hyeong-U Kim, and Woo Seok Kang.
2024. "Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction" Sensors 24, no. 10: 3089.
https://doi.org/10.3390/s24103089
APA Style
Tung, N. H., Lee, H., Dinh, D. K., Kim, D. -W., Lee, J. Y., Eom, G. W., Kim, H. -U., & Kang, W. S.
(2024). Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction. Sensors, 24(10), 3089.
https://doi.org/10.3390/s24103089
