Tasi, C.-T.; Wang, W.-K.; Tsai, T.-Y.; Huang, S.-Y.; Horng, R.-H.; Wuu, D.-S.
Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy. Materials 2017, 10, 605.
https://doi.org/10.3390/ma10060605
AMA Style
Tasi C-T, Wang W-K, Tsai T-Y, Huang S-Y, Horng R-H, Wuu D-S.
Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy. Materials. 2017; 10(6):605.
https://doi.org/10.3390/ma10060605
Chicago/Turabian Style
Tasi, Chi-Tsung, Wei-Kai Wang, Tsung-Yen Tsai, Shih-Yung Huang, Ray-Hua Horng, and Dong-Sing Wuu.
2017. "Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy" Materials 10, no. 6: 605.
https://doi.org/10.3390/ma10060605
APA Style
Tasi, C. -T., Wang, W. -K., Tsai, T. -Y., Huang, S. -Y., Horng, R. -H., & Wuu, D. -S.
(2017). Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy. Materials, 10(6), 605.
https://doi.org/10.3390/ma10060605