Iwase, Y.; Fuchigami, T.; Horie, Y.; Daiko, Y.; Honda, S.; Iwamoto, Y.
Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives. Materials 2019, 12, 1721.
https://doi.org/10.3390/ma12101721
AMA Style
Iwase Y, Fuchigami T, Horie Y, Daiko Y, Honda S, Iwamoto Y.
Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives. Materials. 2019; 12(10):1721.
https://doi.org/10.3390/ma12101721
Chicago/Turabian Style
Iwase, Yoshiaki, Teruaki Fuchigami, Yoji Horie, Yusuke Daiko, Sawao Honda, and Yuji Iwamoto.
2019. "Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives" Materials 12, no. 10: 1721.
https://doi.org/10.3390/ma12101721
APA Style
Iwase, Y., Fuchigami, T., Horie, Y., Daiko, Y., Honda, S., & Iwamoto, Y.
(2019). Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives. Materials, 12(10), 1721.
https://doi.org/10.3390/ma12101721