Jo, J.-W.; Kang, J.; Kim, K.-T.; Kang, S.-H.; Shin, J.-C.; Shin, S.B.; Kim, Y.-H.; Park, S.K.
Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices. Materials 2020, 13, 5571.
https://doi.org/10.3390/ma13235571
AMA Style
Jo J-W, Kang J, Kim K-T, Kang S-H, Shin J-C, Shin SB, Kim Y-H, Park SK.
Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices. Materials. 2020; 13(23):5571.
https://doi.org/10.3390/ma13235571
Chicago/Turabian Style
Jo, Jeong-Wan, Jingu Kang, Kyung-Tae Kim, Seung-Han Kang, Jae-Cheol Shin, Seung Beom Shin, Yong-Hoon Kim, and Sung Kyu Park.
2020. "Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices" Materials 13, no. 23: 5571.
https://doi.org/10.3390/ma13235571
APA Style
Jo, J. -W., Kang, J., Kim, K. -T., Kang, S. -H., Shin, J. -C., Shin, S. B., Kim, Y. -H., & Park, S. K.
(2020). Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices. Materials, 13(23), 5571.
https://doi.org/10.3390/ma13235571