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Jo J-W, Kang J, Kim K-T, Kang S-H, Shin J-C, Shin SB, Kim Y-H, Park SK. Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices. Materials. 2020; 13(23):5571. https://doi.org/10.3390/ma13235571

Jo, Jeong-Wan, Jingu Kang, Kyung-Tae Kim, Seung-Han Kang, Jae-Cheol Shin, Seung Beom Shin, Yong-Hoon Kim, and Sung Kyu Park. 2020. "Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices" Materials 13, no. 23: 5571. https://doi.org/10.3390/ma13235571

Jo, J. -W., Kang, J., Kim, K. -T., Kang, S. -H., Shin, J. -C., Shin, S. B., Kim, Y. -H., & Park, S. K. (2020). Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices. Materials, 13(23), 5571. https://doi.org/10.3390/ma13235571