Shan, C.; Liu, Y.; Wang, Y.; Cai, R.; Su, L.
Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. Micromachines 2023, 14, 2149.
https://doi.org/10.3390/mi14122149
AMA Style
Shan C, Liu Y, Wang Y, Cai R, Su L.
Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. Micromachines. 2023; 14(12):2149.
https://doi.org/10.3390/mi14122149
Chicago/Turabian Style
Shan, Chan, Ying Liu, Yuan Wang, Rongsheng Cai, and Lehui Su.
2023. "Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance" Micromachines 14, no. 12: 2149.
https://doi.org/10.3390/mi14122149
APA Style
Shan, C., Liu, Y., Wang, Y., Cai, R., & Su, L.
(2023). Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. Micromachines, 14(12), 2149.
https://doi.org/10.3390/mi14122149