Chen, G.; Xue, N.; Qi, Z.; Ma, W.; Li, W.; Jin, Z.; Chen, J.
Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum. Micromachines 2024, 15, 516.
https://doi.org/10.3390/mi15040516
AMA Style
Chen G, Xue N, Qi Z, Ma W, Li W, Jin Z, Chen J.
Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum. Micromachines. 2024; 15(4):516.
https://doi.org/10.3390/mi15040516
Chicago/Turabian Style
Chen, Guangyuan, Ning Xue, Zhimei Qi, Weichao Ma, Wangzhe Li, Zhenhu Jin, and Jiamin Chen.
2024. "Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum" Micromachines 15, no. 4: 516.
https://doi.org/10.3390/mi15040516
APA Style
Chen, G., Xue, N., Qi, Z., Ma, W., Li, W., Jin, Z., & Chen, J.
(2024). Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum. Micromachines, 15(4), 516.
https://doi.org/10.3390/mi15040516