Xu, B.; Hu, J.; Meng, J.; He, X.; Wang, X.; Pu, H.
Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment. Crystals 2023, 13, 160.
https://doi.org/10.3390/cryst13020160
AMA Style
Xu B, Hu J, Meng J, He X, Wang X, Pu H.
Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment. Crystals. 2023; 13(2):160.
https://doi.org/10.3390/cryst13020160
Chicago/Turabian Style
Xu, Bei, Jichao Hu, Jiaqi Meng, Xiaomin He, Xi Wang, and Hongbin Pu.
2023. "Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment" Crystals 13, no. 2: 160.
https://doi.org/10.3390/cryst13020160
APA Style
Xu, B., Hu, J., Meng, J., He, X., Wang, X., & Pu, H.
(2023). Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment. Crystals, 13(2), 160.
https://doi.org/10.3390/cryst13020160