Article Versions Notes

Lin R, Han P, Wang Y, Lin R, Lu Y, Liu Z, Zhang X, Li X. Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning. Nanomaterials. 2021; 11(10):2466. https://doi.org/10.3390/nano11102466

Lin, Rongyu, Peng Han, Yue Wang, Ronghui Lin, Yi Lu, Zhiyuan Liu, Xiangliang Zhang, and Xiaohang Li. 2021. "Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning" Nanomaterials 11, no. 10: 2466. https://doi.org/10.3390/nano11102466

Lin, R., Han, P., Wang, Y., Lin, R., Lu, Y., Liu, Z., Zhang, X., & Li, X. (2021). Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning. Nanomaterials, 11(10), 2466. https://doi.org/10.3390/nano11102466