Petrushkov, M.O.; Abramkin, D.S.; Emelyanov, E.A.; Putyato, M.A.; Komkov, O.S.; Firsov, D.D.; Vasev, A.V.; Yesin, M.Y.; Bakarov, A.K.; Loshkarev, I.D.;
et al. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials 2022, 12, 4449.
https://doi.org/10.3390/nano12244449
AMA Style
Petrushkov MO, Abramkin DS, Emelyanov EA, Putyato MA, Komkov OS, Firsov DD, Vasev AV, Yesin MY, Bakarov AK, Loshkarev ID,
et al. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials. 2022; 12(24):4449.
https://doi.org/10.3390/nano12244449
Chicago/Turabian Style
Petrushkov, Mikhail O., Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev,
and et al. 2022. "Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration" Nanomaterials 12, no. 24: 4449.
https://doi.org/10.3390/nano12244449
APA Style
Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Komkov, O. S., Firsov, D. D., Vasev, A. V., Yesin, M. Y., Bakarov, A. K., Loshkarev, I. D., Gutakovskii, A. K., Atuchin, V. V., & Preobrazhenskii, V. V.
(2022). Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials, 12(24), 4449.
https://doi.org/10.3390/nano12244449
