Order Article Reprints

Petrushkov MO, Abramkin DS, Emelyanov EA, Putyato MA, Komkov OS, Firsov DD, Vasev AV, Yesin MY, Bakarov AK, Loshkarev ID, et al. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials. 2022; 12(24):4449. https://doi.org/10.3390/nano12244449

Petrushkov, Mikhail O., Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, and et al. 2022. "Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration" Nanomaterials 12, no. 24: 4449. https://doi.org/10.3390/nano12244449

Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Komkov, O. S., Firsov, D. D., Vasev, A. V., Yesin, M. Y., Bakarov, A. K., Loshkarev, I. D., Gutakovskii, A. K., Atuchin, V. V., & Preobrazhenskii, V. V. (2022). Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials, 12(24), 4449. https://doi.org/10.3390/nano12244449