Wang, L.; Zhang, P.; Zhu, K.; Wang, Q.; Pan, M.; Sun, X.; Huang, Z.; Chen, K.; Yang, Y.; Xie, X.;
et al. A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication. Nanomaterials 2023, 13, 2275.
https://doi.org/10.3390/nano13162275
AMA Style
Wang L, Zhang P, Zhu K, Wang Q, Pan M, Sun X, Huang Z, Chen K, Yang Y, Xie X,
et al. A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication. Nanomaterials. 2023; 13(16):2275.
https://doi.org/10.3390/nano13162275
Chicago/Turabian Style
Wang, Luyu, Penghao Zhang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Xin Sun, Ziqiang Huang, Kun Chen, Yannan Yang, Xinling Xie,
and et al. 2023. "A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication" Nanomaterials 13, no. 16: 2275.
https://doi.org/10.3390/nano13162275
APA Style
Wang, L., Zhang, P., Zhu, K., Wang, Q., Pan, M., Sun, X., Huang, Z., Chen, K., Yang, Y., Xie, X., Huang, H., Hu, X., Xu, S., Wu, C., Wang, C., Xu, M., & Zhang, D. W.
(2023). A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication. Nanomaterials, 13(16), 2275.
https://doi.org/10.3390/nano13162275
