Order Article Reprints

Wang L, Zhang P, Zhu K, Wang Q, Pan M, Sun X, Huang Z, Chen K, Yang Y, Xie X, et al. A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication. Nanomaterials. 2023; 13(16):2275. https://doi.org/10.3390/nano13162275

Wang, Luyu, Penghao Zhang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Xin Sun, Ziqiang Huang, Kun Chen, Yannan Yang, Xinling Xie, and et al. 2023. "A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication" Nanomaterials 13, no. 16: 2275. https://doi.org/10.3390/nano13162275

Wang, L., Zhang, P., Zhu, K., Wang, Q., Pan, M., Sun, X., Huang, Z., Chen, K., Yang, Y., Xie, X., Huang, H., Hu, X., Xu, S., Wu, C., Wang, C., Xu, M., & Zhang, D. W. (2023). A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication. Nanomaterials, 13(16), 2275. https://doi.org/10.3390/nano13162275