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Editorial

Advanced Spintronic and Electronic Nanomaterials

by
Gang Xiang
1,* and
Hongtao Ren
2,*
1
College of Physics, Sichuan University, Chengdu 610064, China
2
School of Materials Science and Engineering, Liaocheng University, Liaocheng 252059, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2024, 14(13), 1139; https://doi.org/10.3390/nano14131139
Submission received: 17 June 2024 / Revised: 27 June 2024 / Accepted: 28 June 2024 / Published: 2 July 2024
(This article belongs to the Special Issue Advanced Spintronic and Electronic Nanomaterials)
Versions Notes
Since single-layer graphene [1] with ultrahigh carrier mobility was obtained experimentally in 2004, two-dimensional (2D) layered electronic materials have become more widespread [2,3,4,5,6,7,8,9]. Two-dimensional non-layered materials [10,11,12,13,14], with their abundant terrestrial resources and low costs, support broader practical applications. Consequently, the repository of 2D materials has become more diverse, facilitating their application in spintronics [15,16,17,18,19], flexible electronics [20,21], information science [22,23], and related fields [24,25].
Over the past two decades, spintronics and electronics [26,27,28,29,30] have developed very rapidly. In 2017, low-temperature long-range ferromagnetic order was experimentally discovered both in Cr2Ge2Te6 [26] and Crl3 [27] monolayer systems. Two-dimensional ferromagnetism immediately became of tremendous interest to researchers all over the world. As such, studies on 2D materials have expanded and now correlate with investigations of both traditional materials and emerging materials including diluted magnetic semiconductors and wide band gap semiconductors.
This Special Issue brings together ten articles, specifically eight research articles and two review articles, dedicated to advanced spintronic and electronic nanomaterials. The content of the Special Issue includes the following: the modulation of vortex resonance in ferromagnetic permalloy dots [31], the capping layer effect on tunneling magnetoresistance in tunnel junctions [32], the size-dependent superconducting properties of indium nanowires [33], the co-doping effect of Mn and halogen elements on GeSe monolayers [34], the colossal magnetoresistance in layered diluted magnetic semiconductor Rb(Zn,Li,Mn)4As3 [35], charge density wave transitions in 2D 1T-TaS2 crystals [36], characterizations of Mn5Ge3 contacts on Ge/SiGe heterostructures [37] and Ni-doped Cd3As2 films on GaAs (111) substrates [38], strain engineering of intrinsic ferromagnetism in 2D van der Waals materials [6], and spintronic applications of carbon-based nanomaterials [39]. Our Special Issue may promote and accelerate ongoing research efforts of advanced spintronic and electronic nanomaterials. It is of vital importance to 2D spintronic devices and will be of interest to general readers of Nanomaterials.

Author Contributions

H.R. and G.X. wrote this Editorial Letter. All authors have read and agreed to the published version of the manuscript.

Funding

H.R. acknowledges the Shandong Province Natural Science Foundation (Grant No. ZR202103040767). G.X. acknowledges the National Natural Science Foundation of China (NSFC) (Grant No. 52172272).

Acknowledgments

The Guest Editors thank the authors for submitting their work to the Special Issue and for its successful completion. A special thank you to all the reviewers participating in the peer-review process of the submitted manuscripts and for enhancing the papers’ quality and impact. We are also grateful to thank all the staff in the Editorial Office who made the entire creation of the Special Issue a smooth and efficient process.

Conflicts of Interest

The authors declare no conflicts of interest.

References

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Xiang, G.; Ren, H. Advanced Spintronic and Electronic Nanomaterials. Nanomaterials 2024, 14, 1139. https://doi.org/10.3390/nano14131139

AMA Style

Xiang G, Ren H. Advanced Spintronic and Electronic Nanomaterials. Nanomaterials. 2024; 14(13):1139. https://doi.org/10.3390/nano14131139

Chicago/Turabian Style

Xiang, Gang, and Hongtao Ren. 2024. "Advanced Spintronic and Electronic Nanomaterials" Nanomaterials 14, no. 13: 1139. https://doi.org/10.3390/nano14131139

APA Style

Xiang, G., & Ren, H. (2024). Advanced Spintronic and Electronic Nanomaterials. Nanomaterials, 14(13), 1139. https://doi.org/10.3390/nano14131139

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