Sollier, S.; Widiez, J.; Gaudin, G.; Mazen, F.; Baron, T.; Martin, M.; Roure, M.-C.; Besson, P.; Morales, C.; Beche, E.;
et al. InGaAs-OI Substrate Fabrication on a 300 mm Wafer. J. Low Power Electron. Appl. 2016, 6, 19.
https://doi.org/10.3390/jlpea6040019
AMA Style
Sollier S, Widiez J, Gaudin G, Mazen F, Baron T, Martin M, Roure M-C, Besson P, Morales C, Beche E,
et al. InGaAs-OI Substrate Fabrication on a 300 mm Wafer. Journal of Low Power Electronics and Applications. 2016; 6(4):19.
https://doi.org/10.3390/jlpea6040019
Chicago/Turabian Style
Sollier, Sebastien, Julie Widiez, Gweltaz Gaudin, Frederic Mazen, Thierry Baron, Mickail Martin, Marie-Christine Roure, Pascal Besson, Christophe Morales, Elodie Beche,
and et al. 2016. "InGaAs-OI Substrate Fabrication on a 300 mm Wafer" Journal of Low Power Electronics and Applications 6, no. 4: 19.
https://doi.org/10.3390/jlpea6040019
APA Style
Sollier, S., Widiez, J., Gaudin, G., Mazen, F., Baron, T., Martin, M., Roure, M. -C., Besson, P., Morales, C., Beche, E., Fournel, F., Favier, S., Salaun, A., Gergaud, P., Cordeau, M., Veytizou, C., Ecarnot, L., Delprat, D., Radu, I.,
& Signamarcheix, T.
(2016). InGaAs-OI Substrate Fabrication on a 300 mm Wafer. Journal of Low Power Electronics and Applications, 6(4), 19.
https://doi.org/10.3390/jlpea6040019
