Dobush, I.M.; Vasil’evskii, I.S.; Zykov, D.D.; Bragin, D.S.; Salnikov, A.S.; Popov, A.A.; Gorelov, A.A.; Kargin, N.I.
Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications. Electronics 2021, 10, 2775.
https://doi.org/10.3390/electronics10222775
AMA Style
Dobush IM, Vasil’evskii IS, Zykov DD, Bragin DS, Salnikov AS, Popov AA, Gorelov AA, Kargin NI.
Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications. Electronics. 2021; 10(22):2775.
https://doi.org/10.3390/electronics10222775
Chicago/Turabian Style
Dobush, Igor M., Ivan S. Vasil’evskii, Dmitry D. Zykov, Dmitry S. Bragin, Andrei S. Salnikov, Artem A. Popov, Andrey A. Gorelov, and Nikolay I. Kargin.
2021. "Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications" Electronics 10, no. 22: 2775.
https://doi.org/10.3390/electronics10222775
APA Style
Dobush, I. M., Vasil’evskii, I. S., Zykov, D. D., Bragin, D. S., Salnikov, A. S., Popov, A. A., Gorelov, A. A., & Kargin, N. I.
(2021). Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications. Electronics, 10(22), 2775.
https://doi.org/10.3390/electronics10222775