Article Versions Notes

Ekanayaka TK, Hao G, Mosey A, Dale AS, Jiang X, Yost AJ, Sapkota KR, Wang GT, Zhang J, N’Diaye AT, et al. Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications. Magnetochemistry. 2021; 7(3):37. https://doi.org/10.3390/magnetochemistry7030037

Ekanayaka, Thilini K., Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, and et al. 2021. "Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications" Magnetochemistry 7, no. 3: 37. https://doi.org/10.3390/magnetochemistry7030037

Ekanayaka, T. K., Hao, G., Mosey, A., Dale, A. S., Jiang, X., Yost, A. J., Sapkota, K. R., Wang, G. T., Zhang, J., N’Diaye, A. T., Marshall, A., Cheng, R., Naeemi, A., Xu, X., & Dowben, P. A. (2021). Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications. Magnetochemistry, 7(3), 37. https://doi.org/10.3390/magnetochemistry7030037