Photo-Luminescent Defects in Silicon Carbide and Diamond and Their Applications

Dear Colleagues,

Color centers or surface defects are common in many materials and some were regarded mostly as detrimental in electronic device fabrications.

Recently, wide-band gap semiconductors, such as diamond, and now silicon carbide (SiC), proved to harbor “atom-like” intra-band gap color centers, revealed to be a disruptive discovery for nanoscale sensing in physics, biology, material science and quantum technology. SiC nanomaterial (quantum dots, nanowires and 2D-like layers) also possesses strong photo-luminescent surface defects in addition to quantum confined photo-luminescence. By controlled fabrication of their counterpart nanomaterials and/or by integration of some deep (within the bandgap) color centers in these materials and in their nanostructures, novel functionalities can be established due to light and matter interactions with specific material properties. The fundamental understanding of these color centers, surface defect properties and their fabrication is essential for their engineering and deployment in next-generation multifunctional sensors or biological imaging markers.

In this Special Issue of C—Journal of Carbon Research, we invite authors to submit original communications, articles, and reviews on the experimental and theoretical aspects of the material, processes development, fabrication and applications of color centers, surface defects in SiC and diamond and their practical utilization.

Some of the key topics relevant to this Special Issue are: Identifying, understanding, and using defects in diamond and SiC in the field of photonics, nanophotonics, spintronics, fluorescence imaging, super-resolution microscopy, magnetic resonance imaging, quantum sensing, quantum communication and quantum computation technology, and biological imaging.

We are looking forward to receiving your high quality research manuscripts.

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. C is an international peer-reviewed open access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

• color centers in diamond and SiC
• photo-luminescence in SiC and diamond nanomaterials
• paramagnetic color centers
• nanodiamonds
• SiC quantum dots
• SiC nanowires
• single photon emission
• nano magnetic resonance imaging in carbon related materials