Selected Papers from the IIKII 2020&2021 Conferences

A special issue of Coatings (ISSN 2079-6412).

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 12383

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Dear Colleagues,

Scientists from all over the world actively want to discover new advanced materials and manufacturing technologies in electrical and mechanical engineering. In recent years, the applications of material science and manufacturing technologies have been highly-developing fields in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. Many researchers studied new coating technologies to improve the properties of materials and devices. It is very important to the development of electronic and mechanical devices in the future.

In addition, the International Institute of Knowledge Innovation and Invention (IIKII, http://www.iikii.org) is designed as an institute to promote the exchange of innovations and inventions. It establishes a communication platform for international innovations and research. This year, IIKII is cooperating with IEEE Tainan Section Sensors Council to hold IEEE conferences such as IEEE ECBIOS 2020 (http://2020.ecbios.asia/), IEEE ECBIOS 2021 (http://www.ecbios.asia), IEEE ICKII 2020 (http://2020.ickii.org/), IEEE ICKII 2021 (http://www.ickii.org), IEEE ECICE 2020 (http://2020.ecice.asia/), and IEEE ECICE 2021 (http://www.ecice.asia). This Special Issue, entitled "Selected Papers from IIKII 2020&2021 Conferences," will select excellent papers from IIKII 2020&2021 conferences and other high-quality papers on topics including the application of coating technologies on thin and thick films, processes for coating deposition and modification, coating on fundamental and advanced materials for electrical and mechanical engineering, their synthesis and engineering, their application on optical sensors, magnetic, acoustic, and thermal transduction, evaluation various performance and exploring their broad applications in industry, etc. We invite investigators to contribute original research articles, as well as review articles, to this Special Issue. Potential topics include, but are not limited to the following:

  • Application of coating technologies on thin and thick films
  • Processes for coating deposition and modification
  • Characterization techniques
  • Functional, protective and decorative coatings
  • Dyes, pigments, and their intermediates
  • Wear, corrosion, erosion
  • Coatings for high temperature
  • Film materials for packaging
  • Applied surface science
  • Adsorption, adhesion, functionalization
  • Fundamental and functional properties of surface and interfaces
  • Theoretical and computational modeling of surfaces and interfaces
  • High surface area systems: colloids, nanoparticles, large interfaces

Prof. Dr. Jenn Kai Tsai
Guest Editor

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Keywords

  • New coating technologies for thin and thick films
  • Processes for coating deposition and modification
  • Characterization techniques
  • Film materials for packaging
  • Applied surface science
  • Fundamental and functional properties of surface and interfaces

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Published Papers (4 papers)

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Research

12 pages, 5233 KiB  
Article
Fabrication of a 3.5-GHz Solidly Mounted Resonator by Using an AlScN Piezoelectric Thin Film
by Chan-Yu Chung, Ying-Chung Chen, Yu-Cheng Chen, Kuo-Sheng Kao and Yu-Chen Chang
Coatings 2021, 11(10), 1151; https://doi.org/10.3390/coatings11101151 - 23 Sep 2021
Cited by 10 | Viewed by 3505
Abstract
In this study, a 3.5-GHz solidly mounted resonator (SMR) was developed by doping scandium in aluminum nitride to form AlScN as the piezoelectric thin film. Molybdenum (Mo) of 449 nm thickness and silicon dioxide (SiO2) of 371 nm thickness were used [...] Read more.
In this study, a 3.5-GHz solidly mounted resonator (SMR) was developed by doping scandium in aluminum nitride to form AlScN as the piezoelectric thin film. Molybdenum (Mo) of 449 nm thickness and silicon dioxide (SiO2) of 371 nm thickness were used as the high and low acoustic impedance films, respectively, which were alternately stacked on a silicon substrate to form a Bragg reflector. Then, an alloy target with atomic ratio of 15% Sc was adopted to deposit the piezoelectric AlScN thin film on the Bragg reflector, using a radio frequency magnetron sputtering system. The characteristics of the c-axis orientation of the AlScN thin films were optimized by adjusting sputtering parameters as sputtering power of 250 W, sputtering pressure of 20 mTorr, nitrogen gas ratio of 20%, and substrate temperature of 300 °C. Finally, a metal top electrode was coated to form a resonator. The X-ray diffraction (XRD) analysis showed that the diffraction peak angles of the AlScN film shifted towards lower angles in each crystal phase, compared to those of AlN film. The energy dispersive X-ray spectrometer (EDX) analysis showed that the percentage of scandium atom in the film is about 4.5%, regardless of the sputtering conditions. The fabricated resonator exhibited a resonance frequency of 3.46 GHz, which was a small deviation from the preset resonance frequency of 3.5 GHz. The insertion loss of −10.92 dB and the electromechanical coupling coefficient of 2.24% were obtained. As compared to the AlN-based device, the AlScN-based resonator exhibited an improved electromechanical coupling coefficient by about two times. Full article
(This article belongs to the Special Issue Selected Papers from the IIKII 2020&2021 Conferences)
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18 pages, 3876 KiB  
Article
Improve the Performance of SONOS Type UV TD Sensors Using IOHAOS with Enhanced UV Transparency ITO Gate
by Wen-Ching Hsieh, Fun-Cheng Jong and Wei-Ting Tseng
Coatings 2021, 11(4), 408; https://doi.org/10.3390/coatings11040408 - 1 Apr 2021
Cited by 2 | Viewed by 1831
Abstract
This research demonstrates that an indium tin oxide–silicon oxide–hafnium aluminum oxide‒silicon oxide–silicon device with enhanced UV transparency ITO gate (hereafter E-IOHAOS) can greatly increase the sensing response performance of a SONOS type ultraviolet radiation total dose (hereafter UV TD) sensor. Post annealing process [...] Read more.
This research demonstrates that an indium tin oxide–silicon oxide–hafnium aluminum oxide‒silicon oxide–silicon device with enhanced UV transparency ITO gate (hereafter E-IOHAOS) can greatly increase the sensing response performance of a SONOS type ultraviolet radiation total dose (hereafter UV TD) sensor. Post annealing process is used to optimize UV optical transmission and electrical resistivity characterization in ITO film. Via nano-columns (NCols) crystalline transformation of ITO film, UV transparency of ITO film can be enhanced. UV radiation causes the threshold voltage VT of the E-IOHAOS device to increase, and the increase of the VT of E-IOHAOS device is also related to the UV TD. The experimental results show that under UV TD irradiation of 100 mW·s/cm2, ultraviolet light can change the threshold voltage VT of E-IOHAOS to 12.5 V. Moreover, the VT fading rate of ten-years retention on E-IOHAOS is below 10%. The VT change of E-IOHAOS is almost 1.25 times that of poly silicon–aluminum oxide–hafnium aluminum oxide–silicon oxide–silicon with poly silicon gate device (hereafter SAHAOS). The sensing response performance of an E-IOHAOS UV TD sensor is greatly improved by annealed ITO gate. Full article
(This article belongs to the Special Issue Selected Papers from the IIKII 2020&2021 Conferences)
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10 pages, 3914 KiB  
Article
Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices
by Yu-Chen Chang, Ying-Chung Chen, Bing-Rui Li, Wei-Che Shih, Jyun-Min Lin, Wei-Tsai Chang and Chien-Chuan Cheng
Coatings 2021, 11(4), 397; https://doi.org/10.3390/coatings11040397 - 30 Mar 2021
Cited by 5 | Viewed by 2514
Abstract
In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on [...] Read more.
In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz. Full article
(This article belongs to the Special Issue Selected Papers from the IIKII 2020&2021 Conferences)
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12 pages, 3937 KiB  
Article
Effects of O2 Plasma Treatments on the Photolithographic Patterning of PEDOT:PSS
by Deng-Yun Zheng, Meng-Hsiang Chang, Ci-Ling Pan and Masahito Oh-e
Coatings 2021, 11(1), 31; https://doi.org/10.3390/coatings11010031 - 30 Dec 2020
Cited by 3 | Viewed by 3512
Abstract
Poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is known for its potential to replace indium–tin oxide in various devices. Herein, when fabricating finger-type PEDOT:PSS electrodes using conventional photolithography, the cross-sectional profiles of the patterns are U-shaped instead of rectangular. The films initially suffer from non-uniformity [...] Read more.
Poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is known for its potential to replace indium–tin oxide in various devices. Herein, when fabricating finger-type PEDOT:PSS electrodes using conventional photolithography, the cross-sectional profiles of the patterns are U-shaped instead of rectangular. The films initially suffer from non-uniformity and fragility as well as defects owing to undesirable patterns. Adding a small amount of hydrolyzed silane crosslinker to PEDOT:PSS suspensions increases the mechanical durability of PEDOT:PSS patterns while lifting off the photoresist. To further improve their microfabrication, we observe the effects of two additional oxygen (O2) plasma treatments on conventional photolithography processes for patterning PEDOT:PSS, expecting to observe how O2 plasma increases the uniformity of the patterns and changes the thickness and U-shaped cross-sectional profiles of the patterns. Appropriately exposing the patterned photoresist to O2 plasma before spin-coating PEDOT:PSS improves the wettability of its surface, including its sidewalls, and a similar treatment before lifting off the photoresist helps partially remove the spin-coated PEDOT:PSS that impedes the lift-off process. These two additional processes enable fabricating more uniform, defect-free PEDOT:PSS patterns. Both increasing the wettability of the photoresist patters before spin-coating PEDOT:PSS and reducing its conformal coverage are key to improving the photolithographic microfabrication of PEDOT:PSS. Full article
(This article belongs to the Special Issue Selected Papers from the IIKII 2020&2021 Conferences)
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