Semiconductor Thin Films: Growth, Characterization, Integration and Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (15 November 2021) | Viewed by 5600

Special Issue Editor


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Guest Editor
Drohobych Ivan Franko State Pedagogical University, Ivan Franko 24, 82100 Drohobych, Ukraine
Interests: condensed phase physics; optoelectronic; thin-film technologies; thin-film materials; epitaxial thin films; pulsed laser deposition; photocurrent spectroscopy; low-frequency noise spectroscopy; photovoltaic and thermoelectric structures
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Special Issue Information

Dear Colleagues,

This Special Issue invites papers on the use of thin films in various fields of science and technology. Of particular interest are thin-film materials used as key elements of technological progress in the production of electronic, photonic, and optoelectronic devices and their integration into various types of devices, as well as the use of high-efficiency thin-film materials for photovoltaic and thermoelectric converters and biomedical technological applications. Papers on their integration with MEMS devices and other recent electronic technologies and their use in industrial devices are also welcome. The areas of application of thin film materials include, among others, photodetectors, infrared and quantum infrared photodetectors (QWIP), semiconductor and quantum cascade lasers, LEDs, solar cells, field-effect transistors, and integrated circuits. These, in turn, include semiconductor devices, wireless devices, telecommunications, integrated circuits, solar cells, and computer chips.  

The thin-film materials this Special Issue aims to focus on are semiconductors, conductive thin films of metal oxides, organic semiconductors, amorphous carbon thin films, nanostructured materials, and other similar materials. This includes:

* Scientific aspects of methods of deposition and processing of thin films; growth and crystallization of thin films, atomic layer crystallization, nucleation and processes during growth and heat treatment of thin films; mechanisms of adsorption and chemical processes on the surface; formation of crystal structures during growth of metal films, epitaxial thin films of intermetallic compounds, pulsed laser deposition of thin films: expectations and real structure of monocrystalline films; in situ growth and classification of cluster morphologists: study of carbon-based materials and growth of composite metal thin films;

* Thin film and coating technologies, including physical vapor deposition (PVD), pulsed laser deposition methods, plasma and ion beam methods, and chemical vapor deposition (CVD);

* Identification of the characteristics of thin films using electrical, thermal, spectroscopic, optical, mechanical, X-ray, and electron microscopic methods; photocurrent spectroscopy of thin passive films, low-frequency noise spectroscopy of polycrystalline semiconductor thin films and film devices, low-energy electron diffraction spectroscopy, and photoelectron spectroscopy of ultrathin films.

More generally, the topics of interest include but are not limited to:

  • Technologies for growing thin films;
  • Mechanisms of growth of thin films;
  • Wide-bandgap and narrow-bandgap semiconductors thin films;
  • Carbon: nanotubes and graphene;
  • Topological insulators thin films;
  • Thin-film structures for photovoltaic and thermoelectric devices;
  • Thin film coatings for biomedicine and bioelectronics devices.

Prof. Ihor S. Virt
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin-film technologies
  • mechanisms of growth of thin films
  • thin-film structures
  • electronic, optoelectronic, photovoltaic, and thermoelectric structures
  • thin film coatings

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Published Papers (1 paper)

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Research

14 pages, 5202 KiB  
Article
Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates
by Yingying Hu, Md Rasadujjaman, Yanrong Wang, Jing Zhang, Jiang Yan and Mikhail R. Baklanov
Coatings 2021, 11(8), 937; https://doi.org/10.3390/coatings11080937 - 5 Aug 2021
Cited by 15 | Viewed by 4352
Abstract
By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, [...] Read more.
By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure. Full article
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