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Semiconductor Thin Films: Fabrication, Properties and Applications
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Semiconductor Thin Films: Fabrication, Properties and Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (10 February 2024) | Viewed by 4245

Special Issue Editor

Prof. Dr. Rene A. Castro Arata

E-Mail Website
Guest Editor
Department of Electronic Physics, The Herzen State Pedagogical University of Russia, Saint-Petersburg 191186, Russia
Interests: semiconductor and dielectric materials; disordered systems; nano- and microstructures; dielectric and optical spectroscopy; surfaces and thin films
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor thin films are important structures for use in micro- and nanoelectronics, and optical communication and biological systems, in devices such as thin-film transistors, planar waveguides, solar elements, LEDs, and gas sensors. The synthesis of semiconductor thin films and the acquisition of physical information about their structural, optical and electronic properties is very important for the development of new stable devices based on them. The new Special Issue of Coatings will include original research articles and review papers written by leaders in the field of semiconductor science and technology.

We look forward to receiving your contributions.

Prof. Dr. Rene A. Castro Arata
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin-semiconductor-film fabrication semiconductor properties and devices micro- and optoelectronics

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Published Papers (2 papers)

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Research

9 pages, 2414 KiB  
Communication
Planar Multi-Gate Artificial Synaptic Transistor with Solution-Processed AlOx Solid Electric Double Layer Dielectric and InOx Channel
by Yu Luo, Zhenwen Li and Yanli Pei
Coatings 2023, 13(4), 719; https://doi.org/10.3390/coatings13040719 - 31 Mar 2023
Cited by 4 | Viewed by 1522
Abstract
Multi-terminal artificial synaptic devices are promising for building neural morphological networks and manufacturing neural chips. In this study, planar multi-gate InOx-based artificial synaptic transistor was demonstrated by using solution-processed AlOx as an electric double layer (EDL) dielectric with mobile hydrogen [...] Read more.
Multi-terminal artificial synaptic devices are promising for building neural morphological networks and manufacturing neural chips. In this study, planar multi-gate InOx-based artificial synaptic transistor was demonstrated by using solution-processed AlOx as an electric double layer (EDL) dielectric with mobile hydrogen protons. The excitatory postsynaptic current (EPSC) was successfully controlled by adjusting amplitude, duration, and interval of the stimulating voltage pulses applied on the planar gates. The EPSC stimulated by multiple inputs shows the property of sublinear summation. As spatial resolution function of the artificial synaptic transistor, the EPSC depends on the presynaptic (planar gate) area and distance to the channel, nonlinearly. The paired-pulse facilitation (PPF), depending on time sequence, demonstrates the temporal resolution function of the multi-gate artificial synaptic transistor. The study shows the potential of planar multi-gate AlOx/InOx EDL transistor as multi-terminal artificial synaptic device. Full article
(This article belongs to the Special Issue Semiconductor Thin Films: Fabrication, Properties and Applications)
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13 pages, 3707 KiB  
Article
Study on Phonon Localization in Silicon Film by Molecular Dynamics
by Jian Zhang, Haochun Zhang, Qi Wang, Wenbo Sun and Dong Zhang
Coatings 2022, 12(4), 422; https://doi.org/10.3390/coatings12040422 - 22 Mar 2022
Cited by 1 | Viewed by 1675
Abstract
In recent years, nanoscale thermal cloaks have received extensive attention from researchers. Amorphization, perforation, and concave are commonly used methods for building nanoscale thermal cloaks. However, the comparison of the three methods and the effect of different structural proportions on phonon localization have [...] Read more.
In recent years, nanoscale thermal cloaks have received extensive attention from researchers. Amorphization, perforation, and concave are commonly used methods for building nanoscale thermal cloaks. However, the comparison of the three methods and the effect of different structural proportions on phonon localization have not been found. Therefore, in this paper, an asymmetrical structure is constructed to study the influence of different structure proportions on phonon localization by amorphization, perforation, and concave silicon film. We first calculated the phonon density of states (PDOS) and the mode participation rate (MPR). To quantitatively explore its influence on phonon localization, we proposed the concept of the degree of phonon localization (DPL) and explored the influence of center and edge effects on phonon localization. We found that for different processing methods, the degree of phonon localization increased with the increase in the processing regions. Compared to the edge, the center had a stronger influence on phonon localization, and the higher the degree of disorder, the stronger the phonon localization. Our research can guide the construction of a nanoscale thermal cloak. Full article
(This article belongs to the Special Issue Semiconductor Thin Films: Fabrication, Properties and Applications)
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