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Crystals
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Advances in Crystals for Optoelectronics
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Advances in Crystals for Optoelectronics

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (29 February 2024) | Viewed by 4416

Special Issue Editors

Dr. Daoyou Guo

E-Mail Website
Guest Editor
Key Laboratory of Optical Field Manipulation of Zhejiang Province, Zhejiang Sci-Tech University, Hangzhou 310018, China
Interests: wide-bandgap semiconductors; Ga2O3; nanocrystals; optoelectronic materials; solar blind photodetector; surface sciences
Dr. Chao Wu

E-Mail
Guest Editor
Key Laboratory of Optical Field Manipulation of Zhejiang Province, Zhejiang Sci-Tech University, Hangzhou 310018, China
Interests: gallium oxide; photodetectors; thin film; PECVD; crystallization kinetics; nanoparticles synthesis

Special Issue Information

Dear Colleagues,

In the past two decades, we have witnessed tremendous progress in the fields of advanced crystals, including two-dimensional (2D) transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, wide-bandgap semiconductors, etc., as well optoelectronics, including light-emitting diodes, solar cells, photodetectors, and sensors. The key to this success is dependent on careful investigations into crystal growth, structural, electrical, mechanical, and optical properties. In this Special Issue, entitled "Advances in Crystals for Optoelectronics", researchers will have the opportunity to publish their novel findings related to recent advances in crystals and optoelectronics devices, including synthesis procedures, crystal structures, underlying theory, computation, models, and novel functional devices for new applications in optoelectronic fields. We aim to cover a wide range of advanced crystals (both inorganic and organic), including hybrid perovskite materials. Submissions on original experimental or research, including materials development, device architecture, and novel device characterization methodology, will be considered. This Special Issue will also include reviews, brief research reports, and perspectives related to advanced crystals and optoelectronics devices.

Dr. Daoyou Guo
Dr. Chao Wu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • crystal growth/structural/electrical/optical properties
  • optoelectronics
  • wide-bandgap semiconductors
  • gallium oxide
  • photodetectors
  • light-emitting diodes
  • solar cells

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Published Papers (3 papers)

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Research

12 pages, 1871 KiB  
Article
Hydrogen-like Impurity States in β-Ga2O3/(AlxGa1−x)2O3 Core/Shell Nanostructures: Comparison between Nanorods and Nanotubes
by Sihua Ha and Jun Zhu
Crystals 2023, 13(8), 1227; https://doi.org/10.3390/cryst13081227 - 9 Aug 2023
Cited by 2 | Viewed by 961
Abstract
The binding energy of an off-center hydrogen-like impurity in an ultra-wide band gap β-Ga2O3/(AlxGa1−x)2O3 core/shell nanostructure is studied using a variational method combined with a finite-difference algorithm. Four impurity states with [...] Read more.
The binding energy of an off-center hydrogen-like impurity in an ultra-wide band gap β-Ga2O3/(AlxGa1−x)2O3 core/shell nanostructure is studied using a variational method combined with a finite-difference algorithm. Four impurity states with the radial and axial quantum numbers being 0 or 1 in two kinds of core/shell nanostructures, including nanorods and double-walled nanotubes, are taken into account in the numerical calculations. The variation trends in binding energy corresponding to the four impurity states as functions of structural dimension and Al composition differ in nanorods and nanotubes when the impurity moves toward the interface between the Ga2O3 and (AlxGa1−x)2O3 layers. The quantum confinement due to the structural geometry has a considerable influence on the probability density of the impurity states as well as the impurity binding energy. The numerical results will pave the way toward theoretical simulation of the electron states in rapidly developing β-Ga2O3 low-dimensional material systems for optoelectronic device applications. Full article
(This article belongs to the Special Issue Advances in Crystals for Optoelectronics)
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14 pages, 1759 KiB  
Article
Excitation Density Effects in the Luminescence Yield and Kinetics of MAPbBr3 Single Crystals
by Andrey N. Belsky, Nikita A. Fedorov, Ivan A. Frolov, Irina A. Kamenskikh, Patrick Martin, Elizaveta D. Rubtsova, Igor N. Shpinkov, Dmitry A. Spassky, Andrey N. Vasil’ev and Boris I. Zadneprovsky
Crystals 2023, 13(7), 1142; https://doi.org/10.3390/cryst13071142 - 22 Jul 2023
Viewed by 1425
Abstract
The luminescent Z-scan technique with time resolution is applied to the study of the luminescence properties of CH3NH3PbBr3 single crystals representative of the family of hybrid organic–inorganic lead perovskites successfully applied recently in photovoltaics and currently investigated as [...] Read more.
The luminescent Z-scan technique with time resolution is applied to the study of the luminescence properties of CH3NH3PbBr3 single crystals representative of the family of hybrid organic–inorganic lead perovskites successfully applied recently in photovoltaics and currently investigated as potential nanosecond scintillators. The third harmonic of Ti-sapphire laser (λ = 266 nm) with a pulse duration of 26 fs and 1 kHz frequency was applied for the luminescence excitation creating the charge carriers with the estimated density from 1017 to 1021 cm−3 in the temperature range from 13 to 300 K. Temperature and excitation density dependence of the luminescence yield and kinetics is interpreted with the consideration of the temperature-dependent binding of electrons and holes into excitons, a saturation of defects responsible for the non-radiative relaxation channel competing with exciton creation; absorption saturation resulting in the increased penetration depth of the excitation radiation and hence the increased contribution of the re-absorption. Full article
(This article belongs to the Special Issue Advances in Crystals for Optoelectronics)
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15 pages, 31035 KiB  
Article
Spectroscopic Properties of Pb2+-Doped BaF2 Crystals
by Gabriel Buse, Marius Stef and Irina Nicoara
Crystals 2023, 13(4), 659; https://doi.org/10.3390/cryst13040659 - 11 Apr 2023
Cited by 1 | Viewed by 1482
Abstract
Various concentrations of PbF2-doped BaF2 crystals were grown by the Bridgman method using a shaped graphite heater. The room temperature optical absorption spectra showed two UV absorption bands (labeled A and D), characteristic of the Pb2+ ions. The structure [...] Read more.
Various concentrations of PbF2-doped BaF2 crystals were grown by the Bridgman method using a shaped graphite heater. The room temperature optical absorption spectra showed two UV absorption bands (labeled A and D), characteristic of the Pb2+ ions. The structure of the bands was analyzed using the Gaussian multi-peak fitting. The distribution of the Pb2+ ions along the crystals and the effective segregation coefficient were studied using the optical absorption method. The obtained effective segregation coefficient was >1. The Pb2+ ions were not uniformly distributed along the samples. High intensity emission bands were observed in the near UV domain and the visible region. Full article
(This article belongs to the Special Issue Advances in Crystals for Optoelectronics)
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