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Crystals
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High Electron Mobility Transistor (HEMT) Devices and Applications
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High Electron Mobility Transistor (HEMT) Devices and Applications

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (31 March 2024) | Viewed by 4945

Special Issue Editors

Dr. Weiyi Li

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Interests: GaN; HEMTs; wide bandgap material; RF transistor; power electronics; transistor modeling
Dr. Houqiang Fu

E-Mail Website
Guest Editor
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe City, AZ 85281, USA
Interests: wide and ultrawide bandgap semiconductors; power electronics; optoelectronics; extreme-environment devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Ever since the demonstration of the first high-electron mobility transistors (HEMTs) by Dr. Mimura in 1981, HEMTs have been developed rapidly and commercialized in different material systems for a myriad of applications. At the early development stage, AlGaAs/GaAs, GaAs/InGaAs, and InP-based HEMTs were widely implemented into high-speed electronics communication applications with excellent noise and power performance. The development of GaN HEMTs has opened the gate to more applications, such as power electronics, mm-wave frequency systems, biosensing, and radiation-hardened electronics. Recently, ultrawide bandgap materials such as AlGaN- and Ga2O3-based HEMTs have been introduced and demonstrated encouraging results. This Special Issue will cover innovative HEMT devices, applications based on HEMT technology, HEMT-related material research, including epitaxy growth, material characterization, and fabrication techniques, and HEMT simulation.

Dr. Weiyi Li
Prof. Dr. Houqiang Fu
Guest Editors

Manuscript Submission Information

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Keywords

  • high-electron mobility transistors
  • HEMT simulation
  • HEMT applications
  • HEMT heterostructure
  • gallium nitride
  • gallium arsenide
  • indium phosphide
  • ultrawide bandgap semiconductors

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Published Papers (2 papers)

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Research

9 pages, 5739 KiB  
Article
High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology
by Bohan Guo, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng, Zhongkai Du, Xuguang Deng, Zhongming Zeng and Baoshun Zhang
Crystals 2024, 14(3), 253; https://doi.org/10.3390/cryst14030253 - 4 Mar 2024
Viewed by 1976
Abstract
This article presents the utilization of the chemical–mechanical polishing (CMP) method to fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) through layer transfer technology. The nucleation and buffer layers were removed via CMP to attain a pristine N-polar GaN surface with elevated smoothness, [...] Read more.
This article presents the utilization of the chemical–mechanical polishing (CMP) method to fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) through layer transfer technology. The nucleation and buffer layers were removed via CMP to attain a pristine N-polar GaN surface with elevated smoothness, featuring a low root-mean-square (RMS) roughness of 0.216 nm. Oxygen, carbon, and chlorine impurity elements content were low after the CMP process, as detected via X-ray photoelectron spectroscopy (XPS). The electrical properties of N-polar HEMTs fabricated via CMP exhibited a sheet resistance (Rsh) of 244.7 Ω/sq, a mobility of 1230 cm2/V·s, and an ns of 2.24 × 1013 cm−2. Compared with a counter device fabricated via inductively coupled plasma (ICP) dry etching, the CMP devices showed an improved output current of 756.1 mA/mm, reduced on-resistance of 6.51 Ω·mm, and a significantly reduced subthreshold slope mainly attributed to the improved surface conditions. Meanwhile, owing to the MIS configuration, the reverse gate leakage current could be reduced to as low as 15 μA/mm. These results highlight the feasibility of the CMP-involved epitaxial layer transfer (ELT) technique to deliver superior N-polar GaN MIS-HEMTs for power electronic applications. Full article
(This article belongs to the Special Issue High Electron Mobility Transistor (HEMT) Devices and Applications)
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10 pages, 3242 KiB  
Communication
Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K
by An Yang, Xing Wei, Wenchao Shen, Yu Hu, Tiwei Chen, Heng Wang, Jiaan Zhou, Runxian Xing, Xiaodong Zhang, Guohao Yu, Yaming Fan, Yong Cai, Zhongming Zeng and Baoshun Zhang
Crystals 2023, 13(4), 620; https://doi.org/10.3390/cryst13040620 - 4 Apr 2023
Cited by 3 | Viewed by 1755
Abstract
A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K. The forward anode voltage is linearly proportional to the temperature over [...] Read more.
A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K. The forward anode voltage is linearly proportional to the temperature over the measured temperature range at a fixed current. At a forward current density of 10−7 mA/mm, the device achieves a maximum sensitivity of 1.93 mV/K. The long-time anode current stress measurement reveals that the HPT-HAD shows almost no degradation even at 573 K for 1 h at a current of 100 μA, and the anode voltage shifts only 120 mV at 573 K for 1000 s at 1 nA. This work shows that the HPT-HAD temperature sensor can be reliably operated over a wide temperature range from cryogenic to high temperatures, so can be used in a variety of extreme environments. Full article
(This article belongs to the Special Issue High Electron Mobility Transistor (HEMT) Devices and Applications)
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