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Crystals
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Nano-Semiconductors: Devices and Technology
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Nano-Semiconductors: Devices and Technology

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 March 2023) | Viewed by 4638

Special Issue Editors

Prof. Dr. Mu-Chun Wang

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Guest Editor
Department of Electronic Engineering, MingHsin University of Science and Technology, Hsinchu 304, Taiwan
Interests: fiber-optic sensors; VLSI/Nano-node process integration; nano-Si device design; semiconductor physics
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Chun-Yeon Lin

E-Mail Website
Guest Editor
Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan
Interests: electromagnetic sensor; electrical impedance sensing system; mechatronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor nano-technology provides great benefits for wide swathes of society, and with better technology comes greater benefits. Moore’s law persists due to the unleashing promotion of advanced lithography, planarization, transistor shape, metallization, semiconductor materials, 2.5/3D IC package, and system-on-integrated circuits. This good news motivates lots of semiconductor vendors in working within the areas of precise equipment development or system incorporation. Thus, semiconductor markets are maturing across the board. Owing to these advantages, engineers, researchers and scholars find an excellent foothold to constantly contribute their achievements. Besides those upgraded engineering technologies, the ultimate chain in cost consideration is the effective management capability in nano-node fabrication.

This Special Issue will provide a great platform for research into new nano semiconductor development and applications, and the coming-together of contributors in this Special Issue will prove beneficial to the future of semiconductor development as a field.

Prof. Dr. Mu-Chun Wang
Prof. Dr. Chun-Yeon Lin
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nano process technology , characteristics, and performance
  • nano device design, characteristics, and models
  • sensing system for semiconductor manufacturing
  • nano semiconductor simulation with physical data
  • nano reliability, failure analysis, and semiconductor Physics
  • nano-node chips for AI, bio, or HPC applications
  • nano semiconductor materials
  • advanced 2.5/3D IC package or system on integrated circuits
  • management technology in nano-node fabrication

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Published Papers (2 papers)

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Research

13 pages, 2878 KiB  
Article
A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism
by Hang Chen, Yourun Zhang, Rong Zhou, Zhi Wang, Chao Lu, Zehong Li and Bo Zhang
Crystals 2023, 13(5), 778; https://doi.org/10.3390/cryst13050778 - 7 May 2023
Cited by 2 | Viewed by 1812
Abstract
In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (RON), and examine the hetero–transfer mechanism by simulation. In this structure, the high [...] Read more.
In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (RON), and examine the hetero–transfer mechanism by simulation. In this structure, the high channel mobility and high breakdown voltage (BV) are obtained simultaneously with the Si channel and the SiC drift region. The heavy doping ETL on the 4H–SiC side of the heterointerface leads to a low heterointerface resistance (RH), while the RH in H–VDMOS is extremely high due to the high heterointerface barrier. The higher carrier concentration of the 4H–SiC surface can significantly reduce the width of the heterointerface barrier, which is demonstrated by the comparison of the conductor energy bands of the proposed HT–VDMOS and the general Si/SiC heterojunction VDMOS (H–VDMOS), and the electron tunneling effect is significantly enhanced, leading to a higher tunneling current. As a result, a significantly improved trade–off between RON and BV is achieved. With similar BV values (approximately 1525 V), the RON of the HT–VDMOS is 88% and 65.75% lower than that of H–VDMOS and the conventional SiC VDMOS, respectively. Full article
(This article belongs to the Special Issue Nano-Semiconductors: Devices and Technology)
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11 pages, 2814 KiB  
Article
Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties
by Zhenying Chen, Xiuqing Cao, Yuyang Huang, Shuang Zhang, Wenjian Pan and Wen Deng
Crystals 2023, 13(2), 264; https://doi.org/10.3390/cryst13020264 - 2 Feb 2023
Cited by 4 | Viewed by 1510
Abstract
Ti-doped ZnO (TZO) and Bi2O3 thin films were designed and deposited by magnetron sputtering successively on ITO glass substrate to form a Ti-doped ZnO/Bi2O3 (TZO/Bi2O3) heterojunction. Microstructure and photoelectric properties of TZO, Bi [...] Read more.
Ti-doped ZnO (TZO) and Bi2O3 thin films were designed and deposited by magnetron sputtering successively on ITO glass substrate to form a Ti-doped ZnO/Bi2O3 (TZO/Bi2O3) heterojunction. Microstructure and photoelectric properties of TZO, Bi2O3, and TZO/Bi2O3 films were tested and characterized. The results showed that TZO film with a hexagonal wurtzite structure was preferentially grown along the crystal plane (002), had a good crystallization state, and was an N-type semiconductor film with high transmittance (90%) and low resistivity (4.68 × 10−3 Ω·cm). However, the Bi2O3 film sputtered in an oxygen-containing atmosphere and was a polycrystalline film that was preferentially grown along the crystal plane (111). It had a lower crystallization quality than TZO film and was a P-type semiconductor film with low transmittance (68%) and high resistance (1.71 × 102 Ω·cm). The I–V curve of TZO/Bi2O3 composite films showed that it had an obvious heterojunction rectification effect, which indicates that the PN heterojunction successfully formed in TZO/Bi2O3 films. Full article
(This article belongs to the Special Issue Nano-Semiconductors: Devices and Technology)
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