Epitaxial Growth and Device Applications of Semiconductors and Heterostructures
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".
Deadline for manuscript submissions: 10 April 2025 | Viewed by 69
Special Issue Editors
Interests: wideband semiconductor; III-nitride; III-oxide; micro-LED; photodetector; white-light LED
Interests: III-nitride semiconductors; optoelectronic devices; nanolaser; Micro-LED
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
As we enter an era defined by advanced semiconductor technologies, high-quality epitaxial growth has never been more critical. Remarkable advances in semiconductor materials have enabled the development of high-performance devices such as (III-nitride based) LEDs, laser diodes, power/RF devices and advanced (2D semiconductor related) technologies. These innovations have resulted from significant advances in epitaxial growth techniques and device fabrication processes.
To further enhance the performance of semiconductor devices, it is essential to explore novel methods related to the achievement of epitaxial growth and device processing technologies. The development of these techniques is often complex and resource intensive, but it is fundamental to achieving superior device performance. Enhanced focus on these technologies is therefore essential to drive the next generation of semiconductor applications.
We would like to invite researchers to contribute to this Special Issue. The scope of this Special Issue includes, but is not limited to, the following topics:
- Wide-bandgap semiconductors;
- 2D semiconductors;
- Silica-based materials;
- Heterostructure materials;
- Epitaxial growth;
- Semiconductor-related devices;
- Material growth on novel substrate;
- Material epitaxy and characterization.
Dr. Jianguo Zhao
Dr. Tao Tao
Guest Editors
Manuscript Submission Information
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Keywords
- semiconductor
- heterostructure
- epitaxial growth
- characterization
- device
- novel substrate
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