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Latest Advances in Electrothermal Models
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Latest Advances in Electrothermal Models

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "J: Thermal Management".

Deadline for manuscript submissions: closed (15 June 2020) | Viewed by 20059

Printed Edition Available!
A printed edition of this Special Issue is available here.

Special Issue Editors

Prof. Dr. Krzysztof Górecki

E-Mail Website
Guest Editor
Department of Marine Electronics, Faculty of Electrical Engineering, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland
Interests: power electronics; power converters; wireless power transfer; energy storage technology; magnetic elements; modelling electronic components and systems; IGBT; MOSFET; BJT; power LEDs; electrothermal analysis
Special Issues, Collections and Topics in MDPI journals
Dr. Paweł Górecki

E-Mail Website
Guest Editor
Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland
Interests: power electronics; modelling; thermal phenomena; IGBTs; semiconductor devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

For many years, tendencies to miniaturize electronic circuits and to increase power density dissipated in these circuits have been observed. During operation of electronic components, their internal temperature increases due to self-heating phenomena and mutual thermal couplings between components located on the common base. An increase in the device’s internal temperature causes changes in characteristics of electronic components and also causes a decrease of the life time of these components.

Therefore, one of the biggest problems of the present electronics is accurate calculation values of internal temperature of such components. Solving this task requires accurate models of the considered components and circuits, which take into account all important physical phenomena occurring in these components and circuits. Models including both electrical and thermal phenomena are called electrothermal models. Such types of models have been described in literature for the last 50 years, but development of electronic technology also causes a development of electrothermal models of electronic components. New versions of such a class of models have different forms and are dedicated to different programs for a computer analysis of electronic circuits, and they could also make it possible to shorten the duration time of calculations. An effective electrothermal analysis also requires effective methods of estimation of parameter values existing in the used models.

In recent years, we can observe dynamic development of the abovementioned electrothermal models. This Special Issue of Energies is devoted to the latest advances in this area.

Prof. Dr. Krzysztof Górecki
Dr. Paweł Górecki
Guest Editors

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Keywords

  • Modeling
  • Compact electrothermal models
  • 2D and 3D electrothermal models
  • Thermal phenomena
  • Self-heating
  • Mutual thermal couplings
  • Electronic components
  • Computer simulations
  • Cooling systems
  • Parameter estimation

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Published Papers (8 papers)

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Research

27 pages, 9191 KiB  
Article
Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC
by Vincenzo d’Alessandro, Lorenzo Codecasa, Antonio Pio Catalano and Ciro Scognamillo
Energies 2020, 13(17), 4563; https://doi.org/10.3390/en13174563 - 3 Sep 2020
Cited by 23 | Viewed by 3423
Abstract
This paper discusses the benefits of an advanced highly-efficient approach to static and dynamic electrothermal simulations of multicellular silicon carbide (SiC) power MOSFETs. The strategy is based on a fully circuital representation of the device, which is discretized into an assigned number of [...] Read more.
This paper discusses the benefits of an advanced highly-efficient approach to static and dynamic electrothermal simulations of multicellular silicon carbide (SiC) power MOSFETs. The strategy is based on a fully circuital representation of the device, which is discretized into an assigned number of individual cells, high enough to analyze temperature and current nonuniformities over the active area. The cells are described with subcircuits implementing a simple transistor model that accounts for the utmost influence of the traps at the SiC/SiO2 interface. The power-temperature feedback is emulated with an equivalent network corresponding to a compact thermal model automatically generated by the FANTASTIC tool from an accurate 3D mesh of the component under test. The resulting macrocircuit can be solved by any SPICE-like simulation program with low computational burden and rare occurrence of convergence issues. Full article
(This article belongs to the Special Issue Latest Advances in Electrothermal Models)
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20 pages, 9177 KiB  
Article
Influence of the Size and Shape of Magnetic Core on Thermal Parameters of the Inductor
by Kalina Detka and Krzysztof Górecki
Energies 2020, 13(15), 3842; https://doi.org/10.3390/en13153842 - 27 Jul 2020
Cited by 8 | Viewed by 2482
Abstract
In this paper, a new thermal model of the inductor is proposed. This model takes into account self-heating in the core and in the winding, and mutual thermal couplings between the mentioned components of the inductor. The form of the elaborated thermal model [...] Read more.
In this paper, a new thermal model of the inductor is proposed. This model takes into account self-heating in the core and in the winding, and mutual thermal couplings between the mentioned components of the inductor. The form of the elaborated thermal model is presented. In this model, the influence of power dissipated in the core and in the winding of the inductor on the efficiency of heat removal is taken into account. Correctness of the model is verified experimentally for inductors containing ferrite cores of different shapes and dimensions. The good agreement between the results of calculations and measurements is obtained. On the basis of the obtained findings, the influence of volume and the shape of the core on thermal resistances and thermal capacitances occurring in this model is discussed. Full article
(This article belongs to the Special Issue Latest Advances in Electrothermal Models)
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8 pages, 776 KiB  
Article
The Influence of an Additional Sensor on the Microprocessor Temperature
by Gilbert De Mey and Andrzej Kos
Energies 2020, 13(12), 3156; https://doi.org/10.3390/en13123156 - 18 Jun 2020
Cited by 3 | Viewed by 1882
Abstract
This paper deals with the problem of inserting a temperature sensor in the neighbourhood of a chip to monitor the junction temperature. If the sensor is not in the middle of the heat source, the recorded temperature can be quite different from the [...] Read more.
This paper deals with the problem of inserting a temperature sensor in the neighbourhood of a chip to monitor the junction temperature. If the sensor is not in the middle of the heat source, the recorded temperature can be quite different from the chip temperature we are mainly interested in. For the steady state temperature, it is rather easy to introduce a correction factor. For the transient behaviour of the temperature, there is a tremendous difference between the chip and the sensor temperature, which cannot be neglected if the temperature is used as a parameter to change, for example, the clock frequency in order to improve the throughput. Full article
(This article belongs to the Special Issue Latest Advances in Electrothermal Models)
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9 pages, 2756 KiB  
Article
Compact Thermal Modeling of Modules Containing Multiple Power LEDs
by Marcin Janicki, Przemysław Ptak, Tomasz Torzewicz and Krzysztof Górecki
Energies 2020, 13(12), 3130; https://doi.org/10.3390/en13123130 - 17 Jun 2020
Cited by 7 | Viewed by 1988
Abstract
Temperature is an essential factor affecting the operation of light-emitting diodes (LEDs), which are often used in circuits containing multiple devices influencing each other. Therefore, the thermal models of such circuits should take into account not only the self-heating effects, but also the [...] Read more.
Temperature is an essential factor affecting the operation of light-emitting diodes (LEDs), which are often used in circuits containing multiple devices influencing each other. Therefore, the thermal models of such circuits should take into account not only the self-heating effects, but also the mutual thermal influences among devices. This problem is illustrated here based on the example of a module containing six LEDs forming on the substrate a hexagon. This module is supposed to operate without any heat sink in the natural convection cooling conditions, hence it has been proposed to increase the thermal pad area in order to lower the device-operating temperature. In the experimental part of the paper, the recorded diode-heating curves are processed using the network identification by deconvolution method. This allows for the computation of the thermal time constant spectra and the generation of device-compact thermal models. Moreover, the influence of the thermal pad surface area on the device temperature and the thermal coupling between LEDs is investigated. Full article
(This article belongs to the Special Issue Latest Advances in Electrothermal Models)
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17 pages, 7045 KiB  
Article
Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode
by Paweł Górecki and Krzysztof Górecki
Energies 2020, 13(12), 3033; https://doi.org/10.3390/en13123033 - 12 Jun 2020
Cited by 5 | Viewed by 2086
Abstract
This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it [...] Read more.
This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas used in this model are adequate for both: continuous conducting mode (CCM) and discontinuous conducting mode (DCM). Correctness of the proposed model is verified experimentally for a boost converter including IGBT. Good accuracy in modeling these converter characteristics is obtained. Full article
(This article belongs to the Special Issue Latest Advances in Electrothermal Models)
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9 pages, 1836 KiB  
Article
Electrothermal Model of SiC Power BJT
by Joanna Patrzyk, Damian Bisewski and Janusz Zarębski
Energies 2020, 13(10), 2617; https://doi.org/10.3390/en13102617 - 21 May 2020
Cited by 6 | Viewed by 2893
Abstract
This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but [...] Read more.
This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode. Full article
(This article belongs to the Special Issue Latest Advances in Electrothermal Models)
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15 pages, 5257 KiB  
Article
Analysis of Algorithm Efficiency for Heat Diffusion at Nanoscale Based on a MEMS Structure Investigation
by Tomasz Raszkowski and Mariusz Zubert
Energies 2020, 13(10), 2520; https://doi.org/10.3390/en13102520 - 15 May 2020
Cited by 4 | Viewed by 2016
Abstract
This paper presents an analysis of the time complexity of algorithms prepared for solving heat transfer problems at nanoscale. The first algorithm uses the classic Dual-Phase-Lag model, whereas the second algorithm employs a reduced version of the model obtained using a Krylov subspace [...] Read more.
This paper presents an analysis of the time complexity of algorithms prepared for solving heat transfer problems at nanoscale. The first algorithm uses the classic Dual-Phase-Lag model, whereas the second algorithm employs a reduced version of the model obtained using a Krylov subspace method. This manuscript includes a description of the finite difference method approximation prepared for analysis of the real microelectromechanical system (MEMS) structure manufactured by the Polish Institute of Electron Technology. In addition, an approximation scheme of the model, as well as the Krylov subspace-based model order reduction technique are also described. The paper considers simulation results obtained using both investigated versions of the Dual-Phase-Lag model. Moreover, the relative error generated by the reduced model, as well as the computational complexity of both algorithms, and a convergence of the proposed approach are analyzed. Finally, all analyses are discussed in detail. Full article
(This article belongs to the Special Issue Latest Advances in Electrothermal Models)
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18 pages, 6874 KiB  
Article
Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure
by Tomasz Raszkowski and Mariusz Zubert
Energies 2020, 13(9), 2379; https://doi.org/10.3390/en13092379 - 9 May 2020
Cited by 3 | Viewed by 2140
Abstract
This paper presents an analysis related to thermal simulation of the test structure dedicated to heat-diffusion investigation at the nanoscale. The test structure consists of thin platinum resistors mounted on wafer made of silicon dioxide. A bottom part of the structure contains the [...] Read more.
This paper presents an analysis related to thermal simulation of the test structure dedicated to heat-diffusion investigation at the nanoscale. The test structure consists of thin platinum resistors mounted on wafer made of silicon dioxide. A bottom part of the structure contains the silicon layer. Simulations were carried out based on the thermal simulator prepared by the authors. Simulation results were compared with real measurement outputs yielded for the mentioned test structure. The authors also propose the Grünwald–Letnikov fractional space-derivative Dual-Phase-Lag heat transfer model as a more accurate model than the classical Fourier–Kirchhoff (F–K) heat transfer model. The approximation schema of proposed model is also proposed. The accuracy and computational properties of both numerical algorithms are presented in detail. Full article
(This article belongs to the Special Issue Latest Advances in Electrothermal Models)
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