2D Materials for Optoelectronic Devices

A special issue of Inorganics (ISSN 2304-6740).

Deadline for manuscript submissions: closed (30 April 2023) | Viewed by 4288

Special Issue Editor


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Guest Editor
School of Physics, Beijing Institute of Technology, Beijing 100081, China
Interests: 2D materials; optoelectronic devices; van der Waals heterostructures; transition metal dichalcogenides; light-matter interation

Special Issue Information

Dear Colleagues,

The 2D material family is one of the rising stars in optoelectronics. 2D materials present unique electrical and optical properties such as the atomically clean interface, large electrostatic modulation, strong light-matter interaction and high tunability of bandstructures, making them highly promising for applications in next-generation optoelectronics devices. Furthermore, van der Waals heterostructures can be facilely built (lattice matching is not required) with various kinds of 2D materials (semiconductors, metals and insulators), providing new playground for novel multifunctional optoelectronic device implements that can be hardly achieved by bulk materials.

This Special Issue aims to cover the recent advances in optoelectronic devices based on 2D materials, including but not limited to topics of photodetectors, photovoltaic devices, light emitting devices, electro-optic modulators, optoelectronic synaptic devices, 2D/3D hybrid devices and flexible optoelectronics.

Prof. Dr. Li Tao
Guest Editor

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Keywords

  • optoelectronics
  • 2D materials
  • transition metal dichalcogenides
  • graphene
  • photodetectors
  • solar cells
  • van der Waals heterostructures

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Published Papers (1 paper)

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Research

16 pages, 5451 KiB  
Article
Influence of Efficient Thickness of Antireflection Coating Layer of HfO2 for Crystalline Silicon Solar Cell
by Deb Kumar Shah, Devendra KC, Ahmad Umar, Hassan Algadi, Mohammad Shaheer Akhtar and O-Bong Yang
Inorganics 2022, 10(10), 171; https://doi.org/10.3390/inorganics10100171 - 12 Oct 2022
Cited by 19 | Viewed by 3190
Abstract
Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the amount of light absorbed into the cell and protect the device from environmental degradation. This paper reports on the thickness optimization of hafnium oxide (HfO2) [...] Read more.
Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the amount of light absorbed into the cell and protect the device from environmental degradation. This paper reports on the thickness optimization of hafnium oxide (HfO2) as an ARC layer for high-performance Si solar cells with PC1D simulation analysis. The deposition of the HfO2 ARC layer on Si cells was carried out with a low-cost sol-gel process followed by spin coating. The thickness of the ARC layer was controlled by varying the spinning speed. The HfO2 ARC with a thickness of 70 nm possessed the lowest average reflectance of 6.33% by covering wavelengths ranging from 400–1000 nm. The different thicknesses of HfO2 ARC layers were used as input parameters in a simulation study to explore the photovoltaic characteristics of Si solar cells. The simulation findings showed that, at 70 nm thickness, Si solar cells had an exceptional external quantum efficiency (EQE) of 98% and a maximum power conversion efficiency (PCE) of 21.15%. The thicknesses of HfO2 ARC considerably impacted the photovoltaic (PV) characteristics of Si solar cells, leading to achieving high-performance solar cells. Full article
(This article belongs to the Special Issue 2D Materials for Optoelectronic Devices)
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