Novel Magnetic Materials and Magnetism in Spintronics

A special issue of Inventions (ISSN 2411-5134). This special issue belongs to the section "Inventions and Innovation in Biotechnology and Materials".

Deadline for manuscript submissions: 30 November 2024 | Viewed by 2183

Special Issue Editor


E-Mail Website
Guest Editor
Department of Electrical Engineering, Jiangnan University, Wuxi 214122, China
Interests: integrated circuit design; modeling and fabrication of semiconductor devices; spintronic devices; magnetic random access memory (MRAM) design
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

As the field of spintronics undergoes swift advancements, an increasing array of sophisticated magnetic materials is being unveiled, showcasing parallel growth in magnetism. This Special Issue within Inventions, published by MDPI, spotlights key topics such as the synthesis methodologies for magnetic materials, especially nanoscale materials, advancements in 2D magnetic materials and 2D spintronic devices, techniques for measuring and characterizing magnetic materials, applications of magnetic materials, innovations in spintronic devices, and the exploration of magnetism associated with novel magnetic materials and spintronic devices.

Prof. Dr. Yanfeng Jiang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Inventions is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • novel magnetic materials
  • magnetism
  • spintronics and spintronic devices
  • magnetic random access memory (MRAM) design
  • integrated circuit design
  • modeling and fabrication of semiconductor devices

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

15 pages, 6067 KiB  
Article
TCAD Modelling of Magnetic Hall Effect Sensors
by Vartika Pandey, Vlad Marsic, Petar Igic and Soroush Faramehr
Inventions 2024, 9(4), 72; https://doi.org/10.3390/inventions9040072 - 10 Jul 2024
Viewed by 1292
Abstract
In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. [...] Read more.
In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. The galvanic transport model of TCAD Sentaurus is used to model the Lorentz force and magnetic behaviour of the sensor. The current difference, total current, and sensitivity simulations are systematically calibrated against experimental data. The sensor is optimised using varying geometrical and biasing parameters for various ambient temperatures. This unintentionally doped ungated current sensor has enhanced sensitivity to 16.5 %T1 when reducing the spacing between the drains to 1 μm and increasing the source to drain spacing to 76 μm. It is demonstrated that the sensitivity degrades at 448 K (S = 12 %T−1), 373 K (S = 14.1 %T−1) compared to 300 K (S = 16.5 %T−1). The simulation results demonstrate a high sensitivity of GaN sensors at elevated temperatures, outperforming silicon counterparts. Full article
(This article belongs to the Special Issue Novel Magnetic Materials and Magnetism in Spintronics)
Show Figures

Figure 1

Back to TopTop