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Design and Analysis of Novel Materials and Structures in the THz Frequencies

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 August 2022) | Viewed by 4311

Special Issue Editor

Dr. Carlito S. Ponseca, Jr.

E-Mail Website1 Website2
Guest Editor
Division of Biomolecular and Organic Electronics, Department of Physics, Chemistry and Biology, IFM Linköping University, 58183 Linkoping, Sweden
Interests: THz spectroscopy; ultrafast phenomena; solar energy conversion; organic electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues

Terahertz (THz) radiation remains one of the least exploited frequencies in the electromagnetic spectrum; this is despite its continuous growth since its first discoveries in the mid-1970s. As such, opportunities for developing new materials and structures that can operate at this regime persist. Some of its most recent applications include but are not limited to probing charge carrier dynamics in photovoltaic devices, controlling biological processes in living cells, and to the development of organic electronic devices in the THz frequencies. Many other distinct uses of this unique far-infrared radiation are currently being explored in various research laboratories. However, this review volume will delimit its scope to fundamental concepts of THz spectroscopy, progress on its use as a versatile optoelectronic material characterization technique, presentation of novel design structures for efficient generation and detection of this far-infrared radiation, and the possibility of its use as a control pulse for nonlinear light–matter interaction, among many others.

This Special Issue aims to stimulate researchers worldwide to share their interesting and promising works in the field of linear and nonlinear spectroscopy and/or in the development of THz devices and structures, and spectroscopy techniques and others listed below. It is my pleasure to invite you to submit a manuscript to this Special Issue. Original research articles, review articles, and communications are welcome.

Dr. Carlito S. Ponseca, Jr.
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Terahertz
  • Far-infrared
  • Spectroscopy
  • Ultrafast phenomena
  • Photoconductivity
  • Low-frequency vibrations
  • Semiconductor materials
  • Time-resolved measurements

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Published Papers (2 papers)

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Research

11 pages, 1988 KiB  
Article
A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process
by Yaxuan Liu, Xin Zhang, Jingye Sun, Ling Tong, Lingbing Kong and Tao Deng
Materials 2022, 15(19), 6578; https://doi.org/10.3390/ma15196578 - 22 Sep 2022
Viewed by 1597
Abstract
This paper reports a novel, one-dimensional dense array of asymmetrical metal-oxide-semiconductor field-effect-transistor (MOSFET) THz detector, which has been fabricated in GlobalFoundries 55-nm CMOS technology. Compared with other technologies, the Si-based complementary metal-oxide-semiconductor (CMOS) dominates in industrial applications, owing to its easier integration and [...] Read more.
This paper reports a novel, one-dimensional dense array of asymmetrical metal-oxide-semiconductor field-effect-transistor (MOSFET) THz detector, which has been fabricated in GlobalFoundries 55-nm CMOS technology. Compared with other technologies, the Si-based complementary metal-oxide-semiconductor (CMOS) dominates in industrial applications, owing to its easier integration and lower cost. However, as the frequency increases, the return loss between the antenna and detector will increase. The proposed THz detector has a short-period grating structure formed by MOSFET fingers in the array, which can serve as an effective antenna to couple incident THz radiation into the FET channels. It not only solved the problem of return loss effectively, but also greatly reduced the detector area. Meanwhile, since the THz signal is rectified at both the source and drain electrodes to generate two current signals with equal amplitude but opposite directions, the source drain voltage is not provided to reduce the power consumption. This leads to a poor performance of the THz detector. Therefore, by using an asymmetric structure for the gate fingers position to replace the source drain voltage, the performance of the detector in the case of zero power consumption can be effectively improved. Compared with the symmetrical MOSFET THz detector, Rv is increased by 183.3% and NEP is decreased by 67.7%. Full article
(This article belongs to the Special Issue Design and Analysis of Novel Materials and Structures in the THz Frequencies)
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18 pages, 8929 KiB  
Article
Tunable Compact Metamaterial-Based Double-Negative/Near-Zero Index Resonator for 6G Terahertz Wireless Applications
by Alya Ali Musaed, Samir Salem Al-Bawri, Mohammad Tariqul Islam, Ahmed Jamal Abdullah Al-Gburi and Mandeep Jit Singh
Materials 2022, 15(16), 5608; https://doi.org/10.3390/ma15165608 - 16 Aug 2022
Cited by 17 | Viewed by 2078
Abstract
This paper introduces the tunability performance, concept, and analysis of a unique and miniaturized metamaterial (MTM) unit cell covering the upcoming 6G applications. The proposed metamaterial consists of two metallic star-shaped split-ring resonators (SRR). It has a line segment placed in the middle [...] Read more.
This paper introduces the tunability performance, concept, and analysis of a unique and miniaturized metamaterial (MTM) unit cell covering the upcoming 6G applications. The proposed metamaterial consists of two metallic star-shaped split-ring resonators (SRR). It has a line segment placed in the middle of the structure, which can feature tunable characteristics. The proposed design provides dual resonances of transmission coefficient S21 at 0.248 and 0.383 THz with a significant operating frequency span of 0.207–0.277 and 0.382–0.390 THz, respectively. Moreover, wide-range achievement, negative permittivity, double-negative (DNG) refractive index, and near-zero permeability characteristics have been exhibited in two (z and y) principal wave propagation axes. The resonance frequencies are selective and modified by adjusting the central slotted-strip line length. Furthermore, the metamaterial is constituted on a polyimide substrate while the overall dimensions are 160 × 160 μm2. A numerical simulation of the proposed design is executed in CST microwave studio and has been compared with advanced design software (ADS) to generate the proposed MTM’s equivalent circuit, which exhibits a similar transmission coefficient (S21). Full article
(This article belongs to the Special Issue Design and Analysis of Novel Materials and Structures in the THz Frequencies)
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