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Epitaxial Growth of Semiconductor Materials
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Epitaxial Growth of Semiconductor Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (10 September 2023) | Viewed by 6606

Special Issue Editor

Dr. Robert Czernecki

E-Mail Website
Guest Editor
Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland
Interests: MOVPE growth; bridge game; philosophy

Special Issue Information

Dear Colleagues,

The development of techniques for the epitaxial growth of thin semiconductor films over recent decades has contributed significantly to the technological revolution. Over this time, there has been at least three stages. First, it was the Si and Ge era, the next was the GaAs and InP era, and now the GaN era is half-jokingly described as "GaNification". The rapid development of epitaxy techniques of Si, Ge, GaAs, and InP could be progressed as good quality and cheap monocrystalline substrates were available. In the case of gallium nitride, the lack of such lattice-matched substrate delayed the progress, but is contributing to the dynamic development of the heteroepitaxial growth techniques. After the success of blue optoelectronics in the global reduction of energy consumption, it is time to improve the efficiency of electronic devices working in systems producing green energy. This Special Issue focuses on epitaxial growth by various techniques utilizing any semiconductor material. I am confident that every article published in this open access Special Issue will be read and cited by a large number of scientists and will disseminate knowledge about epitaxy.

Dr. Robert Czernecki
Guest Editor

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Keywords

  • MOVPE (MOCVD)
  • MBE
  • HVPE
  • AFM
  • XRD
  • SIMS
  • hall effect

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Published Papers (3 papers)

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Research

16 pages, 6290 KiB  
Article
Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations
by Pawel Kempisty, Karol Kawka, Akira Kusaba and Yoshihiro Kangawa
Materials 2023, 16(17), 5982; https://doi.org/10.3390/ma16175982 - 31 Aug 2023
Viewed by 1381
Abstract
This paper presents an improved theoretical view of ab initio thermodynamics for polar GaN surfaces under gallium-rich conditions. The study uses density functional theory (DFT) calculations to systematically investigate the adsorption of gallium atoms on GaN polar surfaces, starting from the clean surface [...] Read more.
This paper presents an improved theoretical view of ab initio thermodynamics for polar GaN surfaces under gallium-rich conditions. The study uses density functional theory (DFT) calculations to systematically investigate the adsorption of gallium atoms on GaN polar surfaces, starting from the clean surface and progressing to the metallic multilayer. First principles phonon calculations are performed to determine vibrational free energies. Changes in the chemical potential of gallium adatoms are determined as a function of temperature and surface coverage. Three distinct ranges of Ga coverage with very low, medium, and high chemical potential are observed on the GaN(000-1) surface, while only two ranges with medium and high chemical potential are observed on the GaN(000-1) surface. The analysis confirms that a monolayer of Ga adatoms on the GaN(000-1) surface is highly stable over a wide range of temperatures. For a second adlayer at higher temperatures, it is energetically more favorable to form liquid droplets than a uniform crystalline adlayer. The second Ga layer on the GaN(0001) surface shows pseudo-crystalline properties even at a relatively high temperature. These results provide a better thermodynamic description of the surface state under conditions typical for molecular beam epitaxy and offer an interpretation of the observed growth window. Full article
(This article belongs to the Special Issue Epitaxial Growth of Semiconductor Materials)
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9 pages, 9755 KiB  
Article
Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy
by Michał Marchewka, Dawid Jarosz, Marta Ruszała, Anna Juś, Piotr Krzemiński, Dariusz Płoch, Kinga Maś and Renata Wojnarowska-Nowak
Materials 2023, 16(5), 1968; https://doi.org/10.3390/ma16051968 - 28 Feb 2023
Cited by 3 | Viewed by 2202
Abstract
We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and [...] Read more.
We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and improved surface quality. The minimal strain T2SL versus GaSb substrate can be achieved by a special shutters sequence during MBE growth that leads to the formation of both interfaces. The obtained minimal mismatches of the lattice constants is smaller than that reported in the literature. The in-plane compressive strain of 60-period InAs/AlSb T2SL 7ML/6ML and 6ML/5ML was completely balanced by the applied IFs, which is confirmed by the HRXRD measurements. The results of the Raman spectroscopy (measured along the direction of growth) and surface analyses (AFM and Nomarski microscopy) of the investigated structures are also presented. Such InAs/AlSb T2SL can be used as material for a detector in the MIR range and, e.g., as a bottom n-contact layer as a relaxation region for a tuned interband cascade infrared photodetector. Full article
(This article belongs to the Special Issue Epitaxial Growth of Semiconductor Materials)
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9 pages, 11292 KiB  
Article
Epitaxial CdSe/PbSe Heterojunction Growth and MWIR Photovoltaic Detector
by Lance L. McDowell, Milad Rastkar Mirzaei and Zhisheng Shi
Materials 2023, 16(5), 1866; https://doi.org/10.3390/ma16051866 - 24 Feb 2023
Cited by 5 | Viewed by 2434
Abstract
A novel Epitaxial Cadmium Selenide (CdSe) on Lead Selenide (PbSe) type-II heterojunction photovoltaic detector has been demonstrated by Molecular Beam Epitaxy (MBE) growth of n-type CdSe on p-type PbSe single crystalline film. The use of Reflection High-Energy Electron Diffraction (RHEED) during the nucleation [...] Read more.
A novel Epitaxial Cadmium Selenide (CdSe) on Lead Selenide (PbSe) type-II heterojunction photovoltaic detector has been demonstrated by Molecular Beam Epitaxy (MBE) growth of n-type CdSe on p-type PbSe single crystalline film. The use of Reflection High-Energy Electron Diffraction (RHEED) during the nucleation and growth of CdSe indicates high-quality single-phase cubic CdSe. This is a first-time demonstration of single crystalline and single phase CdSe growth on single crystalline PbSe, to the best of our knowledge. The current–voltage characteristic indicates a p–n junction diode with a rectifying factor over 50 at room temperature. The detector structure is characterized by radiometric measurement. A 30 μm × 30 μm pixel achieved a peak responsivity of 0.06 A/W and a specific detectivity (D*) of 6.5 × 108 Jones under a zero bias photovoltaic operation. With decreasing temperature, the optical signal increased by almost an order of magnitude as it approached 230 K (with thermoelectric cooling) while maintaining a similar level of noise, achieving a responsivity of 0.441 A/W and a D* of 4.4 × 109 Jones at 230 K. Full article
(This article belongs to the Special Issue Epitaxial Growth of Semiconductor Materials)
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