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Advanced Materials in Photoelectrics and Photonics

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: 20 August 2025 | Viewed by 1010

Special Issue Editors


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Guest Editor
Institute of Photonics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 824005, Taiwan
Interests: graphene; (color) solar energy absorber; LED
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Guest Editor
Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 82444, Taiwan
Interests: solid-state electronics; solar cells
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Department of Semiconductor and Electro-Optical Technology, Minghsin University of Science and Technology, Xinfeng 30401, Taiwan
Interests: photoelectric devices; photoelectric memory devices; photoelectric nonvolatile memory
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Background:

Optoelectronics and photonics, which are at the forefront of modern technological innovation, leverage light–matter interactions to develop solutions across a broad spectrum of applications—from energy generation to communication systems. The focus on energy-related fields represents a concerted effort to address global energy challenges via the application of more efficient solar technologies. This includes the development of high-efficiency photovoltaic materials that convert sunlight directly into electricity and innovations in solar thermal materials that absorb and store solar energy as heat. Such advancements in LED technology are pivotal for energy-saving lighting solutions and displays, and this progress in laser technologies has been increasingly exploited in a wide range of applications, from cutting-edge manufacturing processes to medical procedures. Additionally, sensors accurately measure light interactions, boosting the capabilities of optoelectronic device. In particular, silicon photonics, which integrates sensors and lasers, plays a pivotal role in advancing big data computing and high-speed communications.

This Special Issue, entitled "Advanced Materials for Optoelectronics and Photonics", focuses on solar cells, solar thermal absorbers, LEDs, lasers, sensors, silicon photonics, etc., to enhance energy efficiency and technical capabilities in various fields.

Aims:

This Special Issue aims to showcase recent breakthroughs and ongoing research in advanced materials, highlighting their role in enhancing the performance and functionality of optoelectronic and photonic devices. The specific goals of this Special Issue include the following:

Presenting innovative materials and technologies that enhance the conversion efficiency of solar energy systems.

Exploring the latest developments in LED technology to foster more sustainable and effective solutions.

Highlighting advancements in laser materials, broadening their applications across industrial, medical, and communication sectors.

Emphasizing the importance of refining sensor materials in augmenting the capabilities and functionality of optoelectronic and photonic devices.

Investigating silicon photonics, a technology that marries electronics with photons to compress the optical pathway onto a tiny chip, thus enabling high-speed, low-energy data transmission.

Guidelines for Potential Authors:

Scope of Submission: Authors are encouraged to submit original research articles, reviews, and case studies that discuss significant advances in material science and its application in solar energy materials, LEDs, lasers, and sensors. Interdisciplinary works that connect advanced materials with electrical engineering, physics, and sustainability are welcome. The scope of this Special Issue includes the manufacturing (including material growth, epitaxial processes, coatings, etc.), simulation (including theory, calculation process, modeling, etc.), analysis and application of materials or the use of materials in devices.

Innovative Focus: Submissions should clearly articulate the novel aspects of the research and its potential impact on the field of optoelectronics and photonics. Comparative studies that highlight improvements over existing solutions are highly encouraged.

This Special Issue seeks to compile a comprehensive overview of the latest research and developments in the field, aiming to inspire further research and practical applications.

Prof. Dr. Fu-Der Lai
Prof. Dr. Yilin Yang
Prof. Dr. Wen-Ching Hsieh
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photoelectrics
  • photonics
  • semiconductors
  • manufacture
  • simulation
  • analysis
  • solar material

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Published Papers (1 paper)

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Research

31 pages, 3726 KiB  
Article
Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices
by Devki N. Talwar, Sky Semone and Piotr Becla
Materials 2024, 17(13), 3082; https://doi.org/10.3390/ma17133082 - 23 Jun 2024
Cited by 1 | Viewed by 743
Abstract
Carbon-based novel low-dimensional XC/YC (with X, Y ≡ Si, Ge, and Sn) heterostructures have recently gained considerable scientific and technological interest in the design of electronic devices for energy transport use in extreme environments. Despite many efforts made to understand the structural, electronic, [...] Read more.
Carbon-based novel low-dimensional XC/YC (with X, Y ≡ Si, Ge, and Sn) heterostructures have recently gained considerable scientific and technological interest in the design of electronic devices for energy transport use in extreme environments. Despite many efforts made to understand the structural, electronic, and vibrational properties of XC and XxY1−xC alloys, no measurements exist for identifying the phonon characteristics of superlattices (SLs) by employing either an infrared and/or Raman scattering spectroscopy. In this work, we report the results of a systematic study to investigate the lattice dynamics of the ideal (XC)m/(YC)n as well as graded (XC)10/(X0.5Y0.5C)/(YC)10/(X0.5Y0.5C) SLs by meticulously including the interfacial layer thickness (≡1–3 monolayers). While the folded acoustic phonons (FAPs) are calculated using a Rytov model, the confined optical modes (COMs) and FAPs are described by adopting a modified linear-chain model. Although the simulations of low-energy dispersions for the FAPs indicated no significant changes by increasing , the results revealed, however, considerable “downward” shifts of high frequency COMs and “upward” shifts for the low energy optical modes. In the framework of a bond polarizability model, the calculated results of Raman scattering spectra for graded SLs are presented as a function of . Special attention is paid to those modes in the middle of the frequency region, which offer strong contributions for enhancing the Raman intensity profiles. These simulated changes are linked to the localization of atomic displacements constrained either by the XC/YC or YC/XC unabrupt interfaces. We strongly feel that this study will encourage spectroscopists to perform Raman scattering measurements to check our theoretical conjectures. Full article
(This article belongs to the Special Issue Advanced Materials in Photoelectrics and Photonics)
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