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Research on New Optoelectronic Materials and Devices
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Research on New Optoelectronic Materials and Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: 20 April 2025 | Viewed by 3701

Special Issue Editor

Prof. Dr. Mingsheng Long

E-Mail Website
Guest Editor
Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
Interests: quantum transport research on low-dimensional material electronic devices; high-quality two-dimensional material single-crystal growth; heterojunction photodetector
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Welcome to this Special Issue focusing on the exciting field of research on new optoelectronic materials and devices. With the continuous advancements in technology, there is a growing need for efficient and high-performance optoelectronic technologies. This Special Issue invites researchers, scientists, and engineers from around the world to contribute their original research papers. We welcome submissions that explore a wide range of topics related to new optoelectronic materials and devices. This includes, but is not limited to:

  • Synthesis and fabrication techniques for innovative optoelectronic materials;
  • Characterization and analysis of optical and electronic properties of novel materials;
  • Design and development of high-performance optoelectronic devices;
  • Applications of new optoelectronic materials in areas such as solar cells, LEDs, and sensors;
  • Advances in theoretical simulations and modeling of optoelectronic materials and devices.

We encourage authors to submit their manuscripts presenting groundbreaking findings, experimental results, and theoretical insights. All submitted papers will undergo a rigorous peer-review process to ensure the highest scientific quality and relevance to the Special Issue.

This Special Issue provides an excellent platform for researchers to share their expertise, exchange ideas, and contribute to the advancement of the field. We invite you to be part of this exciting endeavor and look forward to receiving your valuable contributions.

Prof. Dr. Mingsheng Long
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronic materials
  • optoelectronic devices
  • optical properties
  • electronic properties
  • research advancements
  • innovation
  • novel materials
  • cutting-edge technology

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Published Papers (3 papers)

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Research

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10 pages, 2226 KiB  
Article
The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation
by Libo Zhang, Li Ye, Weiwei Zhao, Chongji Huang, Xue Liu, Wenshuai Gao, Tao Li, Tai Min, Jinbo Yang, Mingliang Tian and Xuegang Chen
Materials 2024, 17(14), 3471; https://doi.org/10.3390/ma17143471 - 13 Jul 2024
Viewed by 791
Abstract
Time-dependent second-harmonic generation (TD-SHG) is an emerging sensitive and fast method to qualitatively evaluate the interface quality of the oxide/Si heterostructures, which is closely related to the interfacial electric field. Here, the TD-SHG is used to explore the interface quality of atomic layer [...] Read more.
Time-dependent second-harmonic generation (TD-SHG) is an emerging sensitive and fast method to qualitatively evaluate the interface quality of the oxide/Si heterostructures, which is closely related to the interfacial electric field. Here, the TD-SHG is used to explore the interface quality of atomic layer deposited HfO2 films on Si substrates. The critical SHG parameters, such as the initial SHG signal and characteristic time constant, are compared with the fixed charge density (Qox) and the interface state density (Dit) extracted from the conventional electrical characterization method. It reveals that the initial SHG signal linearly decreases with the increase in Qox, while Dit is linearly correlated to the characteristic time constant. It verifies that the TD-SHG is a sensitive and fast method, as well as simple and noncontact, for evaluating the interface quality of oxide/Si heterostructures, which may facilitate the in-line semiconductor test. Full article
(This article belongs to the Special Issue Research on New Optoelectronic Materials and Devices)
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9 pages, 2290 KiB  
Article
Layer Dependence of Complex Refractive Index in CrSBr
by Chao Hu, Huanghuang Cheng, Jiayuan Zhou, Kai Zhang, Xue Liu and Yuxuan Jiang
Materials 2024, 17(14), 3430; https://doi.org/10.3390/ma17143430 - 11 Jul 2024
Viewed by 893
Abstract
CrSBr is a recently discovered two-dimensional anti-ferromagnet. It has attracted much attention due to its superior properties for potential optoelectronic and spintronic applications. However, its complex refractive index with layer dependence has not been systematically studied yet. In this work, we studied the [...] Read more.
CrSBr is a recently discovered two-dimensional anti-ferromagnet. It has attracted much attention due to its superior properties for potential optoelectronic and spintronic applications. However, its complex refractive index with layer dependence has not been systematically studied yet. In this work, we studied the room-temperature complex refractive indices of thin CrSBr flakes of different thicknesses in the visible light range. Using micro-reflectance spectroscopy, we measured the optical contrast of thin CrSBr flakes with respect to different substrates. The complex refractive index was extracted by modeling the optical contrast with the Fresnel equations. We extracted the band gap values of CrSBr in the few-layer limit. We determined the band gaps for monolayer, bilayer, and trilayer CrSBr to be 1.88 eV, 1.81 eV, and 1.77 eV, respectively. As a comparison, the band gap for multilayer CrSBr is outside our measured range, that is, below 1.55 eV. Our results suggest that the band gap of CrSBr decreases as thickness increases. Full article
(This article belongs to the Special Issue Research on New Optoelectronic Materials and Devices)
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Review

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29 pages, 3983 KiB  
Review
Polymer Materials for Optoelectronics and Energy Applications
by Ju Won Lim
Materials 2024, 17(15), 3698; https://doi.org/10.3390/ma17153698 - 26 Jul 2024
Cited by 1 | Viewed by 1364
Abstract
This review comprehensively addresses the developments and applications of polymer materials in optoelectronics. Especially, this review introduces how the materials absorb, emit, and transfer charges, including the exciton–vibrational coupling, nonradiative and radiative processes, Förster Resonance Energy Transfer (FRET), and energy dynamics. Furthermore, it [...] Read more.
This review comprehensively addresses the developments and applications of polymer materials in optoelectronics. Especially, this review introduces how the materials absorb, emit, and transfer charges, including the exciton–vibrational coupling, nonradiative and radiative processes, Förster Resonance Energy Transfer (FRET), and energy dynamics. Furthermore, it outlines charge trapping and recombination in the materials and draws the corresponding practical implications. The following section focuses on the practical application of organic materials in optoelectronics devices and highlights the detailed structure, operational principle, and performance metrics of organic photovoltaic cells (OPVs), organic light-emitting diodes (OLEDs), organic photodetectors, and organic transistors in detail. Finally, this study underscores the transformative impact of organic materials on the evolution of optoelectronics, providing a comprehensive understanding of their properties, mechanisms, and diverse applications that contribute to advancing innovative technologies in the field. Full article
(This article belongs to the Special Issue Research on New Optoelectronic Materials and Devices)
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