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Advances in Synthetic Diamond Materials
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Advances in Synthetic Diamond Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Carbon Materials".

Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 20249

Special Issue Editor

Prof. Dr. Kazimierz Fabisiak

E-Mail Website
Guest Editor
Department of Production Engineering Management, University of Bydgoszcz, Unii Lubelskiej 4c, 85059 Bydgoszcz, Poland
Interests: CVD diamond; thin nano- and microcrystalline films; diamond single crystals; optical spectroscopy
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Significant achievements in recent years in the synthesis of diamonds using CVD methods have resulted in easy access to this material for engineers and designers.

CVD diamond has a number of outstanding material properties that can enable exceptional performance in diverse applications.

It has long been recognized that diamond is a remarkable material characterized by extreme hardness and wear resistance. Other properties, such as optical, thermal, electrochemical, chemical, and electronic, also outclass competing materials.

The combination of these properties offers designers an engineering material with tremendous potential, offering solutions that can shift performance to new levels or enabling completely new approaches to challenging problems.

This Special Issue on “Advances in Synthetic Diamond Materials” invites scientists, designers, and engineers to publish their recent achievements concerning the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics, and electrochemistry, and it is expected to summarize how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high-performance product.

The Special Issue will cover (but not restricted) to the following topics:

  • Methods of synthesis of diamond meterials
  • Characterization of diamond materials (optical, electrical, structural, mechanical, etc.)
  • Tailoring diamond to its end application as chemo- and bio-sensors, transducers, optical elements, electronic devices, etc.;
  • Environmental applications and water treatment;
  • Smart materials and systems.

It is a great honor to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are welcome.

Prof. Kazimierz Fabisiak
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Diamond monocrystals and thin diamond films
  • Methods of synthesis and characterizations
  • Electrical, optical, thermal mechanical properties
  • Tailoring diamond materials to the end application
  • Electronic devices based on diamond materials

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Published Papers (6 papers)

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Research

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11 pages, 19320 KiB  
Article
The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions
by Szymon Łoś, Kazimierz Fabisiak, Kazimierz Paprocki, Mirosław Szybowicz, Anna Dychalska, Ewa Spychaj-Fabisiak and Wojciech Franków
Materials 2021, 14(21), 6615; https://doi.org/10.3390/ma14216615 - 3 Nov 2021
Cited by 5 | Viewed by 1887
Abstract
The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and [...] Read more.
The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics. Full article
(This article belongs to the Special Issue Advances in Synthetic Diamond Materials)
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11 pages, 3466 KiB  
Article
Gemological Characteristic Difference between Colorless CVD Synthetic Diamonds and Natural Diamonds
by Qi Lu, Huaiyu Gong, Qingfeng Guo, Xuren Huang and Jiayi Cai
Materials 2021, 14(20), 6225; https://doi.org/10.3390/ma14206225 - 19 Oct 2021
Cited by 5 | Viewed by 3994
Abstract
CVD synthetic diamond plays an important role in the jewelry market due to its excellent performance and low cost. In this paper, colorless CVD synthetic diamonds produced by a Chinese company were investigated in detail with their gemological, spectroscopic, and luminescent properties compared [...] Read more.
CVD synthetic diamond plays an important role in the jewelry market due to its excellent performance and low cost. In this paper, colorless CVD synthetic diamonds produced by a Chinese company were investigated in detail with their gemological, spectroscopic, and luminescent properties compared with natural colorless diamonds. Compared with natural diamonds, CVD synthetic diamonds have high-order interference color and more apparent abnormal birefringence. The results of infrared spectra indicate that all the CVD samples are classified as type IIa, while the natural samples belong to type Ia. The CVD samples show lamellar growth and mottled luminescence pattern and have blue, orange red, purple red, and blue fluorescence, respectively, while most of the natural samples show blue fluorescence. CVD diamonds show lamellar growth structure, and natural diamonds show irregular ring-like growth structure. Thus, multiple methods combined with analysis are required to distinguish synthetic diamonds from natural diamonds. This work provides an experimental basis for the identification of CVD synthetic diamonds. Full article
(This article belongs to the Special Issue Advances in Synthetic Diamond Materials)
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10 pages, 20946 KiB  
Article
Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser
by Qiang Wei, Xiaofan Zhang, Fang Lin, Ruozheng Wang, Genqiang Chen and Hong-Xing Wang
Materials 2021, 14(11), 3006; https://doi.org/10.3390/ma14113006 - 1 Jun 2021
Cited by 9 | Viewed by 2574
Abstract
Two types of a trench with conventional vertical and new reverse-V-shaped cross-sections were fabricated on single crystal diamond (SCD) substrate using a micro-jet water-assisted laser. In addition, a microwave plasma chemical vapor deposition device was used to produce multiple micrometer-sized channels using the [...] Read more.
Two types of a trench with conventional vertical and new reverse-V-shaped cross-sections were fabricated on single crystal diamond (SCD) substrate using a micro-jet water-assisted laser. In addition, a microwave plasma chemical vapor deposition device was used to produce multiple micrometer-sized channels using the epitaxial lateral overgrowth technique. Raman and SEM methods were applied to analyze both types of growth layer characterization. The hollowness of the microchannels was measured using an optical microscope. According to the findings, the epitaxial lateral overgrowth layer of the novel reverse-V-shaped trench produced improved SCD surface morphology and crystal quality. Full article
(This article belongs to the Special Issue Advances in Synthetic Diamond Materials)
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14 pages, 3582 KiB  
Article
Visible-Light Activation of Photocatalytic for Reduction of Nitrogen to Ammonia by Introducing Impurity Defect Levels into Nanocrystalline Diamond
by Rui Su, Zhangcheng Liu, Haris Naeem Abbasi, Jinjia Wei and Hongxing Wang
Materials 2020, 13(20), 4559; https://doi.org/10.3390/ma13204559 - 14 Oct 2020
Cited by 4 | Viewed by 3039
Abstract
Nitrogen impurity has been introduced in diamond film to produce a nitrogen vacancy center (NV center) toward the solvated electron-initiated reduction of N2 to NH3 in liquids, giving rise to extend the wavelength region beyond the diamond’s band. Scanning electron microscopy [...] Read more.
Nitrogen impurity has been introduced in diamond film to produce a nitrogen vacancy center (NV center) toward the solvated electron-initiated reduction of N2 to NH3 in liquids, giving rise to extend the wavelength region beyond the diamond’s band. Scanning electron microscopy and X-ray diffraction demonstrate the formation of the nanocrystalline nitrogen-doped diamond with an average diameter of ten nanometers. Raman spectroscopy and PhotoLuminescence (PL) spectrum show characteristics of the NV0 and NV− charge states. Measurements of photocatalytic activity using supraband (λ < 225 nm) gap and sub-band gap (λ > 225 nm) excitation show the nitrogen-doped diamond significantly enhanced the ability to reduce N2 to NH3 compared to the polycrystalline diamond and single crystal diamond (SCD). Our results suggest an important process of internal photoemission, in which electrons are excited from negative charge states into conduction band edges, presenting remarkable photoinitiated electrons under ultraviolet and visible light. Other factors, including transitions between defect levels and processes of reaction, are also discussed. This approach can be especially advantageous to such as N2 and CO2 that bind only weakly to most surfaces and high energy conditions. Full article
(This article belongs to the Special Issue Advances in Synthetic Diamond Materials)
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12 pages, 1589 KiB  
Article
The n–Si/p–CVD Diamond Heterojunction
by Szymon Łoś, Kazimierz Paprocki, Mirosław Szybowicz and Kazimierz Fabisiak
Materials 2020, 13(16), 3530; https://doi.org/10.3390/ma13163530 - 10 Aug 2020
Cited by 6 | Viewed by 2378
Abstract
Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers. In this context, the polycrystalline diamond layers grown by CVD methods on silicon substrates seem to be a promising material for engineering sensing [...] Read more.
Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers. In this context, the polycrystalline diamond layers grown by CVD methods on silicon substrates seem to be a promising material for engineering sensing devices. The proper tuning of the deposition parameters allows us to develop the diamond layers with varying crystallinity and defect structure, as was shown by SEM and Raman spectroscopy investigations. The cathodoluminescence (CL) spectroscopy revealed defects located just in the middle of the energy gap of diamonds. The current–voltage–temperature, I−V−T characteristics performed in a broad temperature range of 77–500 K yielded useful information about the electrical conduction in this interesting material. The recorded I−V−T in the forward configuration of the n–Si/p–CVD diamond heterojunction indicated hopping trough defects as the primary mechanism limiting conduction properties. The Ohmic character of the carriers flux permitting throughout heterojunction is intensified by charges released from the depletion layer. The magnification amplitude depends on both the defect density and the probability that biasing voltage is higher than the potential barrier binding the charge. In the present work, a simple model is proposed that describes I−V−T characteristics in a wide range of voltage, even where the current saturation effect occurs. Full article
(This article belongs to the Special Issue Advances in Synthetic Diamond Materials)
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Review

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35 pages, 14570 KiB  
Review
Ultrananocrystalline Diamond Nanowires: Fabrication, Characterization, and Sensor Applications
by Andrew F. Zhou, Xinpeng Wang, Elluz Pacheco and Peter X. Feng
Materials 2021, 14(3), 661; https://doi.org/10.3390/ma14030661 - 31 Jan 2021
Cited by 11 | Viewed by 4238
Abstract
The aim of this review is to provide a survey of the recent advances and the main remaining challenges related to the ultrananocrystalline diamond (UNCD) nanowires and other nanostructures which exhibit excellent capability as the core components for many diverse novel sensing devices, [...] Read more.
The aim of this review is to provide a survey of the recent advances and the main remaining challenges related to the ultrananocrystalline diamond (UNCD) nanowires and other nanostructures which exhibit excellent capability as the core components for many diverse novel sensing devices, due to the unique material properties and geometry advantages. The boron or nitrogen doping introduced in the gas phase during deposition promotes p-type or n-type conductivity. With the establishment of the UNCD nanofabrication techniques, more and more nanostructure-based devices are being explored in measuring basic physical and chemical parameters via classic and quantum methods, as exemplified by gas sensors, ultraviolet photodetectors, piezoresistance effect-based devices, biological applications and biosensors, and nitrogen-vacancy color center-based magnetic field quantum sensors. Highlighted finally are some of the remaining challenges and the future outlook in this area. Full article
(This article belongs to the Special Issue Advances in Synthetic Diamond Materials)
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