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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 15875

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Special Issue Editors

Prof. Dr. Nikolas J. Podraza

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Guest Editor

Department of Physics and Astronomy & Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA
Interests: thin films; optical properties; spectroscopic ellipsometry; photovoltaics
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Prof. Dr. Jordi Faraudo

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Guest Editor

Materials Simulation and Theory Department Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus de la UAB, E-08193 Bellaterra, Spain
Interests: soft matter theory; self-assembly theory; theory of colloidal forces; computer simulations
Special Issues, Collections and Topics in MDPI journals

Prof. Dr. Dameng Liu

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Guest Editor

State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
Interests: frictional energy dissipation mechanism; photoelectric non-destructive testing technology; flexible material manufacturing equipment

Special Issue Information

Dear Colleagues,

Thin film properties and material behaviors at interfaces may differ substantially from their bulk form, these differences enabling an incredibly expanding range of technological applications, from electronics to medicine. The unique structural, chemical, electrical, optical, magnetic, and mechanical properties of thin films compared to their bulk counterparts arise from the compositional and structural design, interactions with other materials or ambient, defects, and other characteristics. Similarly, the nature of thin films often involves complicated interactions between materials at interfaces utilized to manipulate chemical reactions, diffusion, self-assembly, and other physical processes, their fundamental understanding, characterization, and application continuously advancing. It is my pleasure to invite you to submit a manuscript for our Special Issue “Feature Papers in Thin Films and Interfaces”, with topics including, but not limited to, thin film deposition and processing, advanced characterization techniques, fundamental properties of materials and systems, computational studies, and emerging applications, full papers, communications, and reviews being welcome.

Prof. Dr. Nikolas J. Podraza
Prof. Dr. Jordi Faraudo
Prof. Dr. Dameng Liu
Guest Editors

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Keywords

vacuum and solution deposition methods
self-assembly
chemical absorption
side effects
quantum confinement
engineered materials
functional coatings
photovoltaics
sensors
hard coatings
SIMS
XPS
spectroscopic ellipsometry
electron microscopy
computational modeling

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Published Papers (6 papers)

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Research

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13 pages, 4526 KiB

Open AccessArticle

Investigation of the Performance of Perovskite Solar Cells with ZnO-Covered PC₆₁BM Electron Transport Layer

by Ting-Chun Chang, Chen-Yi Liao, Ching-Ting Lee and Hsin-Ying Lee

Materials 2023, 16(14), 5061; https://doi.org/10.3390/ma16145061 - 18 Jul 2023

Cited by 5 | Viewed by 1323

Abstract

Due to its high carrier mobility and electron transmission, the phenyl-C₆₁-butyric acid methyl ester (PC₆₁BM) is usually used as an electron transport layer (ETL) in perovskite solar cell (PSC) configurations. However, PC₆₁BM films suffer from poor coverage on perovskite active layers because of their low solubility and weak adhesive ability. In this work, to overcome the above-mentioned shortcomings, 30 nm thick PC₆₁BM ETLs with different concentrations were modeled. Using a 30 nm thick PC₆₁BM ETL with a concentration of 50 mg/mL, the obtained performance values of the PSCs were as follows: an open-circuit voltage (V_oc) of 0.87 V, a short-circuit current density (J_sc) of 20.44 mA/cm², a fill factor (FF) of 70.52%, and a power conversion efficiency (PCE) of 12.54%. However, undesired fine cracks present on the PC₆₁BM surface degraded the performance of the resulting PSCs. To further improve performance, multiple different thicknesses of ZnO interface layers were deposited on the PC₆₁BM ETLs to release the fine cracks using a thermal evaporator. In addition to the pavement of fine cracks, the ZnO interface layer could also function as a hole-blocking layer due to its larger highest occupied molecular orbital (HOMO) energy level. Consequently, the PCE was improved to 14.62% by inserting a 20 nm thick ZnO interface layer in the PSCs. Full article

(This article belongs to the Special Issue Feature Papers in Thin Films and Interfaces)

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13 pages, 5515 KiB

Open AccessEditor’s ChoiceArticle

Area-Selective Atomic Layer Deposition of ZnO on Si\SiO₂ Modified with Tris(dimethylamino)methylsilane

by Behnam Moeini, Tahereh G. Avval, Hidde H. Brongersma, Stanislav Průša, Pavel Bábík, Elena Vaníčková, Brian R. Strohmeier, David S. Bell, Dennis Eggett, Steven M. George and Matthew R. Linford

Materials 2023, 16(13), 4688; https://doi.org/10.3390/ma16134688 - 29 Jun 2023

Viewed by 1773

Abstract

Delayed atomic layer deposition (ALD) of ZnO, i.e., area selective (AS)-ALD, was successfully achieved on silicon wafers (Si\SiO₂) terminated with tris(dimethylamino)methylsilane (TDMAMS). This resist molecule was deposited in a home-built, near-atmospheric pressure, flow-through, gas-phase reactor. TDMAMS had previously been shown to react with Si\SiO₂ in a single cycle/reaction and to drastically reduce the number of silanols that remain at the surface. ZnO was deposited in a commercial ALD system using dimethylzinc (DMZ) as the zinc precursor and H₂O as the coreactant. Deposition of TDMAMS was confirmed by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and wetting. ALD of ZnO, including its selectivity on TDMAMS-terminated Si\SiO₂ (Si\SiO₂\TDMAMS), was confirmed by in situ multi-wavelength ellipsometry, ex situ SE, XPS, and/or high-sensitivity/low-energy ion scattering (HS-LEIS). The thermal stability of the TDMAMS resist layer, which is an important parameter for AS-ALD, was investigated by heating Si\SiO₂\TDMAMS in air and nitrogen at 330 °C. ALD of ZnO takes place more readily on Si\SiO₂\TDMAMS heated in the air than in N₂, suggesting greater damage to the surface heated in the air. To better understand the in situ ALD of ZnO on Si\SiO₂\TDMAMS and modified (thermally stressed) forms of it, the ellipsometry results were plotted as the normalized growth per cycle. Even one short pulse of TDMAMS effectively passivates Si\SiO₂. TDMAMS can be a useful, small-molecule inhibitor of ALD of ZnO on Si\SiO₂ surfaces. Full article

(This article belongs to the Special Issue Feature Papers in Thin Films and Interfaces)

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13 pages, 2105 KiB

Open AccessEditor’s ChoiceArticle

Analyzing the Bolometric Performance of Vanadium Oxide Thin Films Modified by Carbon Nanotube Dispersions

by Usha Philipose, Chris Littler, Yan Jiang, Alia Naciri, Michael Harcrow and A. J. Syllaios

Materials 2023, 16(4), 1534; https://doi.org/10.3390/ma16041534 - 12 Feb 2023

Cited by 1 | Viewed by 2210

Abstract

The influence of carbon nanotube (CNT) dispersions on the electrical properties and noise signal amplitude of

V O_{x}

films is investigated. For a critical range of the CNT dispersion density on

V O_{x}

films, the intrinsic properties of the [...] Read more.

The influence of carbon nanotube (CNT) dispersions on the electrical properties and noise signal amplitude of

V O_{x}

films is investigated. For a critical range of the CNT dispersion density on

V O_{x}

films, the intrinsic properties of the

V O_{x}

films are modified by the CNTs. The CNT concentrations reported in this work are about 0.3

μ

g/cm

^{2}

and 1.6

μ

g/cm

^{2}

, allowing for low density and high density dispersions on the

V O_{x}

film surface to be investigated. These values are higher than the percolation threshold of about 0.12

μ

g/cm

^{2}

for these films. The composite film exhibits a significant reduction in the temperature coefficient of resistance (TCR) (from ≈3.8%

K^{- 1}

to ≈0.3%

K^{- 1}

) for high density dispersions. In contrast, while

V O_{x}

–CNT composites with low density single wall CNT dispersions exhibit no significant change in TCR values, an approximate two orders of magnitude reduction in the low frequency 1/f noise is measured. The noise signal amplitude measured at 0.1 V and at 1.0 Hz reduces from 6 ×

10^{- 5}

V / \sqrt{(} H z)

for

V O_{x}

films to 5 ×

10^{- 7}

V / \sqrt{(} H z)

for the low density SWCNT dispersion on

V O_{x}

film and to 3 ×

10^{- 6}

V / \sqrt{(} H z)

for the low density MWCNT dispersion on

V O_{x}

film. The CNT concentration is the critical factor for yielding the observed changes in conductivity and low frequency noise. The results presented in this work provide a better understanding of

V O_{x}

-based composites, thereby enabling the development of new, versatile and functional materials for device applications. Full article

(This article belongs to the Special Issue Feature Papers in Thin Films and Interfaces)

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21 pages, 5122 KiB

Open AccessEditor’s ChoiceArticle

Surface Modification and Properties of Thin Ink Films with Added TiO₂ and ZnO Nanoparticles Applied on Paperboard Substrates

by Sanja Mahović Poljaček, Tamara Tomašegović, Maja Strižić Jakovljević and Davor Donevski

Materials 2023, 16(2), 478; https://doi.org/10.3390/ma16020478 - 4 Jan 2023

Cited by 2 | Viewed by 1710

Abstract

In this study, the surface modification of thin ink films with added nanoparticles was used to improve the functional properties of ink applied on paperboard substrates. The surface modification was performed by additional exposure of the samples to xenon radiation. Anatase TiO₂, rutile TiO₂ and ZnO were added to the base ink. The effect of surface modification on the surface, structural, and mechanical properties of the printed ink films was determined by FTIR-ATR spectroscopy, calculating the surface free energy and adhesion parameters, performing the rub resistance test of the printed samples, and by measuring the resistance to bending. Color measurements on the ink films were performed in order to observe the optical properties of unmodified and modified samples. The results showed that surface modification significantly improved the adhesion properties of the thin ink films and the mechanical properties of the samples. The results obtained on uncoated and coated paperboard showed that the addition of rutile TiO₂ and ZnO nanoparticles had the greatest effect on the rub resistance of the ink films. The results of the color analysis showed that the addition of nanoparticles did not change the optical properties of the modified ink films and that rutile TiO₂ and ZnO nanoparticles improved the lightfastness of the applied ink films. Full article

(This article belongs to the Special Issue Feature Papers in Thin Films and Interfaces)

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Figure 1

13 pages, 2950 KiB

Open AccessArticle

Ag Surface and Bulk Segregations in Sputtered ZrCuAlNi Metallic Glass Thin Films

by Michael K. Steinhoff, Damian M. Holzapfel, Soheil Karimi Aghda, Deborah Neuß, Peter J. Pöllmann, Marcus Hans, Daniel Primetzhofer, Jochen M. Schneider and Clio Azina

Materials 2022, 15(5), 1635; https://doi.org/10.3390/ma15051635 - 22 Feb 2022

Cited by 3 | Viewed by 2315

Abstract

We report on the formation of Ag-containing ZrCuAlNi thin film metallic glass (nano)composites by a hybrid direct-current magnetron sputtering and high-power pulsed magnetron sputtering process. The effects of Ag content, substrate temperature and substrate bias potential on the phase formation and morphology of the nanocomposites were investigated. While applying a substrate bias potential did not strongly affect the morphological evolution of the films, the Ag content dictated the size and distribution of Ag surface segregations. The films deposited at low temperatures were characterized by strong surface segregations, formed by coalescence and Ostwald ripening, while the volume of the films remained featureless. At higher deposition temperature, elongated Ag segregations were observed in the bulk and a continuous Ag layer was formed at the surface as a result of thermally enhanced surface diffusion. While microstructural observations have allowed identifying both surface and bulk segregations, an indirect method for detecting the presence of Ag segregations is proposed, by measuring the electrical resistivity of the films. Full article

(This article belongs to the Special Issue Feature Papers in Thin Films and Interfaces)

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Review

Jump to: Research

25 pages, 2327 KiB

Open AccessReview

Optical Thin Films Fabrication Techniques—Towards a Low-Cost Solution for the Integrated Photonic Platform: A Review of the Current Status

by Muhammad A. Butt, Cuma Tyszkiewicz, Paweł Karasiński, Magdalena Zięba, Andrzej Kaźmierczak, Maria Zdończyk, Łukasz Duda, Malgorzata Guzik, Jacek Olszewski, Tadeusz Martynkien, Alicja Bachmatiuk and Ryszard Piramidowicz

Materials 2022, 15(13), 4591; https://doi.org/10.3390/ma15134591 - 29 Jun 2022

Cited by 24 | Viewed by 5249

Abstract

In the past few decades, several methods concerning optical thin films have been established to facilitate the development of integrated optics. This paper provides a brief depiction of different techniques for implementing optical waveguide thin films that involve chemical, physical, and refractive index modification methods. Recent advances in these fabrication methods are also been presented. Most of the methods developed for the realization of the thin-films are quite efficient, but they are expensive and require sophisticated equipment. The major interest of the scientists is to develop simple and cost-effective methods for mass production of optical thin films resulting in the effective commercialization of the waveguide technology. Our research group is focused on developing a silica-titania optical waveguide platform via the sol-gel dip-coating method and implementing active and passive optical elements via the wet etching method. We are also exploring the possibility of using nanoimprint lithography (NIL) for patterning these films so that the fabrication process is efficient and economical. The recent developments of this platform are discussed. We believe that silica-titania waveguide technology developed via the sol-gel dip-coating method is highly attractive and economical, such that it can be commercialized for applications such as sensing and optical interconnects. Full article

(This article belongs to the Special Issue Feature Papers in Thin Films and Interfaces)

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