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Micromachines
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2D Semiconductor Materials and Devices
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2D Semiconductor Materials and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (20 August 2022) | Viewed by 10644

Special Issue Editors

Dr. Tianlong Zhao

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: 2D semiconductor materials and devices; first-principles calculations; semiconductor device reliability; piezoelectric materials and devices
Special Issues, Collections and Topics in MDPI journals
Dr. Kai Zhang

E-Mail Website
Guest Editor
The Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Interests: 2D semiconductor materials and devices; nanowires semiconductor materials and devices; photodetectors; quantum devices; MOSFET devices
Dr. Dongdong Chen

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: Piezoelectric materials and transducers; Integrated circuits; Design and fabrication of microsystem; Intelligent optimization algorithms and its applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

In this Special Issue on “2D Semiconductor Materials and Devices”, we will focus on the field of 2D semiconductor materials with regard to their synthesis, fundamental properties, and the design and fabrication of devices. Two-dimensional semiconductor materials are intensely studied because they are promising for applications in electronics, optoelectronics, and batteries, as well as biomedicine in recent years, due to their unique physicochemical properties. The range of available materials include single-element layers such as graphene, phosphorene, arsenene, antimonene, and bismuthene and layered materials with mixed elemental compositions such as transition metal dichalcogenides, MXenes, and van der Waals heterostructures. In our Special Issue, we welcome the novel works reporting on 2D semiconductor materials and their device applications to discuss the most recent breakthroughs and the potential impacts in related research fields. All interested researchers are kindly invited to contribute to this Special Issue with their original research articles, short communications, and review articles. Manuscripts will be internationally peer-reviewed. Topics we specifically seek to cover include but are not limited to the following:

  • Simulation and design methods of 2D semiconductor materials and their devices;
  • Novel methods for the preparation of 2D semiconductor materials and their devices;
  • Novel physicochemical properties of 2D semiconductor materials and their devices;
  • Novel photoelectrical properties of 2D semiconductor materials and their devices;
  • Novel quantum device and performances based on 2D semiconductor materials;
  • Advanced electronic device structure and MOSFET performances based on 2D semiconductor materials;
  • Novel studies in interdisciplinary applications of 2D semiconductor materials;
  • Promising applications of 2D semiconductor materials and their devices.

Dr. Tianlong Zhao
Dr. Kai Zhang
Prof. Dr. Dongdong Chen
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D semiconductor materials
  • advanced processes
  • photodetectors
  • quantum devices
  • MOSFET devices
  • semiconductor device reliability
  • first-principles calculations
  • modelling and simulation
  • intelligent design

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Related Special Issue

Published Papers (4 papers)

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Research

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10 pages, 4110 KiB  
Article
Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor
by Jong Hyeok Oh and Yun Seop Yu
Micromachines 2022, 13(8), 1329; https://doi.org/10.3390/mi13081329 - 16 Aug 2022
Viewed by 1472
Abstract
In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. When drain-source voltage is applied at the NFBFET, the aligning between conduction band of N-region and valence [...] Read more.
In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. When drain-source voltage is applied at the NFBFET, the aligning between conduction band of N-region and valence band of P-region occur, and band-to-band tunneling (BTBT) current can be formed on surface region of N-P junction in the channel of the NFBFET. When the doping concentration of gated-channel region (Ngc) is 4 × 1018 cm−3, the tunneling current makes off-currents increase approximately 104 times. As gate-source voltage is applied to NFBFET, the tunneling rate decreases owing to reducing of aligned region between bands by stronger gate-field. Eventually, the tunneling currents are vanished at the BTBT vanishing point before threshold voltage. When Ngc increase from 4 × 1018 to 6 × 1018, the tunneling current is generated not only at the surface region but also at the bulk region. Moreover, the tunneling length is shorter at the surface and bulk regions, and hence the leakage currents more increase. The BTBT vanishing point also increases due to increase of tunneling rates at surface and bulk region as Ngc increases. Full article
(This article belongs to the Special Issue 2D Semiconductor Materials and Devices)
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14 pages, 7241 KiB  
Article
Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse
by Lei Wang, Changchun Chai, Tianlong Zhao, Fuxing Li, Yingshuo Qin and Yintang Yang
Micromachines 2022, 13(8), 1288; https://doi.org/10.3390/mi13081288 - 11 Aug 2022
Cited by 5 | Viewed by 1807
Abstract
Currently, severe electromagnetic circumstances pose a serious threat to electronic systems. In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail. The mechanism is presented by analyzing the variation in the [...] Read more.
Currently, severe electromagnetic circumstances pose a serious threat to electronic systems. In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail. The mechanism is presented by analyzing the variation in the internal distribution of multiple physical quantities in the device. The results reveal that the device damage was dominated by different thermal accumulation effects such as self-heating, avalanche breakdown and hot carrier emission during the action of the high-power EMP. Furthermore, a multi-scale protection design for the GaN HEMT against high-power electromagnetic interference (EMI) is presented and verified by a simulation study. The device structure optimization results demonstrate that the symmetrical structure, with the same distance from the gate to drain (Lgd) and gate to source (Lgs), possesses a higher damage threshold compared to the asymmetrical structure, and that a proper passivation layer, which enhances the breakdown characteristics, can improve the anti-EMI capability. The circuit optimization results present the influences of external components on the damage progress. The findings show that the resistive components which are in series at the source and gate will strengthen the capability of the device to withstand high-power EMP damage. All of the above conclusions are important for device reliability design using gallium nitride materials, especially when the device operates under severe electromagnetic circumstances. Full article
(This article belongs to the Special Issue 2D Semiconductor Materials and Devices)
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10 pages, 23185 KiB  
Article
Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets
by Xiangxiang Gao, Hai-Yang Liu, Jincheng Zhang, Jian Zhu, Jingjing Chang and Yue Hao
Micromachines 2022, 13(6), 956; https://doi.org/10.3390/mi13060956 - 16 Jun 2022
Cited by 10 | Viewed by 4106
Abstract
The wafer-scale fabrication of two-dimensional (2D) semiconductor thin films is the key to the preparation of large-area electronic devices. Although chemical vapor deposition (CVD) solves this problem to a certain extent, complex processes are required to realize the transfer of thin films from [...] Read more.
The wafer-scale fabrication of two-dimensional (2D) semiconductor thin films is the key to the preparation of large-area electronic devices. Although chemical vapor deposition (CVD) solves this problem to a certain extent, complex processes are required to realize the transfer of thin films from the growth substrate to the device substrate, not to mention its harsh reaction conditions. The solution-based synthesis and assembly of 2D semiconductors could realize the large-scale preparation of 2D semiconductor thin films economically. In this work, indium selenide (In2Se3) nanosheets with uniform sizes and thicknesses were prepared by the electrochemical intercalation of quaternary ammonium ions into bulk crystals. Layer-by-layer (LbL) assembly was used to fabricate scalable and uniform In2Se3 thin films by coordinating In2Se3 with poly(diallyldimethylammonium chloride) (PDDA). Field-effect transistors (FETs) made from a single In2Se3 flake and In2Se3 thin films showed mobilities of 12.8 cm2·V−1·s−1 and 0.4 cm2·V−1·s−1, respectively, and on/off ratios of >103. The solution self-assembled In2Se3 thin films enriches the research on wafer-scale 2D semiconductor thin films for electronics and optoelectronics and has broad prospects in high-performance and large-area flexible electronics. Full article
(This article belongs to the Special Issue 2D Semiconductor Materials and Devices)
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Review

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22 pages, 7825 KiB  
Review
The Development and Progress of the UWB Physical Layer
by Ziteng Lv, Xin Zhang, Dongdong Chen, Di Li, Xianglong Wang, Tianlong Zhao, Yintang Yang, Yanbo Zhao and Xin Zhang
Micromachines 2023, 14(1), 8; https://doi.org/10.3390/mi14010008 - 21 Dec 2022
Cited by 5 | Viewed by 2463
Abstract
Ultra-wideband (UWB) technology has been applied in many fields, such as radar and indoor positioning, because of its advantages of having a high transmission rate, anti-multipath interference, and good concealment. In the UWB physical layer, the transmitting link, including an encoder and a [...] Read more.
Ultra-wideband (UWB) technology has been applied in many fields, such as radar and indoor positioning, because of its advantages of having a high transmission rate, anti-multipath interference, and good concealment. In the UWB physical layer, the transmitting link, including an encoder and a pulse generator, is used to improve the anti-interference ability of the signal, while the receiving link, including a receiver and a decoder, can correct the error signal. Therefore, the performance of the UWB physical layer can obviously affect the speed and quality of UWB signal transmission. In this paper, the structure and performance of the codec and transceiver of the UWB physical layer are introduced and compared. In addition, some typical architectures and features are summarized and discussed, which provides a valuable reference and suggestions for the design of the UWB physical layer. Finally, the outlook of the UWB physical layer is presented: its development direction mainly includes high speed, low power consumption, and fewer hardware resources. Full article
(This article belongs to the Special Issue 2D Semiconductor Materials and Devices)
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