FET and Field Effect-Based Sensors
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".
Deadline for manuscript submissions: closed (1 December 2020) | Viewed by 19272
Special Issue Editor
Special Issue Information
Dear Colleagues,
In 2022, our society will enter the Trillion Sensors Universe where things are connected on the internet with digital information through many tiny sensors in the field of medicine, agriculture, environment protection, homeland security, and so on to realize the Smart Society. Field-effect transistors (FETs) have a long history and good results in sensing and imaging applications due to their CMOS processing and wide applicability as an interface and are still good candidates for physical, chemical, ionic, and biological sensing in the next generation. One example is the use of FETs for label-free biosensing via electrostatic interactions between carriers in semiconductor materials and target analyte, which is specifically recognized on a gate dielectric. Nowadays, field-effect devices based on organic materials (e.g., conducting polymers) are developed with features on flexibility, lightness, biocompatibility, low cost, and mass productivity. An understanding of both the basics and applications is essential for further development. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on novel developments of FET or field effect-based sensors in terms of design, modeling, micro-/nanoscale manufacturing, transducing mechanisms, sensing modality, materials, interface, and real-world applications. Related topics of FET included in the keywords below are also welcome.
Prof. Dr. Tatsuro Goda
Guest Editor
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Keywords
- bioelectronics
- chemical/biological sensing
- conducting polymers
- diagnostics
- environmental monitoring
- healthcare
- ion sensing
- optoelectronics
- real-world applications
- wearable/ingestible/implantable sensing
- wireless/remote sensing
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