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Micromachines
Special Issues
Multifunctional-Nanomaterials-Based Semiconductor Devices and Sensors
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Multifunctional-Nanomaterials-Based Semiconductor Devices and Sensors

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (31 January 2024) | Viewed by 5088

Special Issue Editors

Dr. Noshin Fatima

E-Mail Website
Guest Editor
Faculty of Engineering, Technology and Built Environment, UCSI University, Kuala Lumpur 56000, Malaysia
Interests: organic sensors; transistors; solar cells; thermoelectric cells; flexible devices; high gravity deposition
Prof. Dr. Khasan S. Karimov

E-Mail Website
Guest Editor
Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23640, Pakistan
Interests: electrophysical properties of organic semiconductors; organic semiconductor devices (sensors, solar cells); materials processing at high gravity conditions (thin films); utilization of renewable energy

Special Issue Information

Dear Colleagues,

In recent years, multifunctional-nanomaterials-based semiconducting devices and sensors have become one of the most researched topics. Due to changes in conductivity, semiconductor materials are widely employed in solar cells, thermoelectric materials, diodes, electrochemical cells, and sensors, among other applications. In addition to being a crucial material as an active layer, they also exhibit remarkable outcomes as substrates and supporting layers. Semiconductor-based devices respond differently to humidity, temperature, light, gas, etc. Therefore, the same device may perform many functions simultaneously, which not only reduces their size but also minimizes manufacturing costs. These devices can be manufactured using a variety of techniques, such as screen printing, spin coating, spray coating, rubbing-in, different gravity deposition, thermal deposition, chemical vapor deposition, etc., which provides a vast space for scientific research not only at the industrial level, but also at the domestic and academic levels. Generally speaking, semiconductor devices are more dependable, stable, affordable, and accessible. Due to the great sensitivity of their reactions, these devices are not only utilized as sensors, but also as one of the primary materials to meet the rising energy demands. Researchers are forced to employ free natural resources such as the sun to generate energy through solar cells and thermoelectric generators, which drives innovation in nanomaterials-based multi-functional semiconductor devices. Consequently, this Special Issue aims to feature research papers, brief communications, and review articles that focus on novel methodological developments in semiconductor-based devices and sensor applications not only in engineering and medical industries, but also in research development and domestic-level applications.

Dr. Noshin Fatima
Prof. Dr. Khasan S. Karimov
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • morphological and electrical analysis
  • nano materials
  • p–n junctions
  • semiconductor devices
  • simulation (theory)

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Published Papers (3 papers)

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Research

26 pages, 7311 KiB  
Article
Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study
by Alper Ülkü, Esin Uçar, Ramis Berkay Serin, Rifat Kaçar, Murat Artuç, Ebru Menşur and Ahmet Yavuz Oral
Micromachines 2024, 15(6), 726; https://doi.org/10.3390/mi15060726 - 30 May 2024
Cited by 1 | Viewed by 788
Abstract
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide semiconductor field effect transistors (MOSFETs) would be the 3D version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During recent decades, the [...] Read more.
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide semiconductor field effect transistors (MOSFETs) would be the 3D version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During recent decades, the width of fin (Wfin) and the neighboring gate oxide width (tox) in FinFETs has shrunk from about 150 nm to a few nanometers. However, both widths seem to have been leveling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting the Penn model and Maxwell–Garnett mixing formula for a dielectric constant (κ) calculation for nanolaminate structures, FinFETs with two- and three-stage κ-graded stacked combinations of gate dielectrics with SiO2, Si3N4, Al2O3, HfO2, La2O3, and TiO2 perform better against the same structures with their single-layer dielectrics counterparts. Based on this, FinFETs simulated with κ-graded gate oxides achieved an off-state drain current (IOFF) reduced down to 6.45 × 10−15 A for the Al2O3: TiO2 combination and a gate leakage current (IG) reaching down to 2.04 × 10−11 A for the Al2O3: HfO2: La2O3 combination. While our findings push the individual dielectric laminates to the sub 1 nm limit, the effects of dielectric permittivity matching and κ-grading for gate oxides remain to have the potential to shed light on the next generation of nanoelectronics for higher integration and lower power consumption opportunities. Full article
(This article belongs to the Special Issue Multifunctional-Nanomaterials-Based Semiconductor Devices and Sensors)
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15 pages, 5398 KiB  
Article
Fabrication and Characterization of Monolithic Integrated Three-Axis Acceleration/Pressure/Magnetic Field Sensors
by Ying Wang, Yu Xiao, Xiaofeng Zhao and Dianzhong Wen
Micromachines 2024, 15(3), 412; https://doi.org/10.3390/mi15030412 - 19 Mar 2024
Cited by 1 | Viewed by 1551
Abstract
In order to realize the measurement of three-axis acceleration, pressure, and magnetic field, monolithic integrated three-axis acceleration/pressure/magnetic field sensors are proposed in this paper. The proposed sensors were constructed with an acceleration sensor consisting of four L-shaped double beams, two masses, middle double-beams, [...] Read more.
In order to realize the measurement of three-axis acceleration, pressure, and magnetic field, monolithic integrated three-axis acceleration/pressure/magnetic field sensors are proposed in this paper. The proposed sensors were constructed with an acceleration sensor consisting of four L-shaped double beams, two masses, middle double-beams, and twelve piezoresistors, a pressure sensor made of a square silicon membrane, and four piezoresistors, as well as a magnetic field sensor composed of five Hall elements. COMSOL software and TCAD-Atlas software were used to simulate characteristics of integrated sensors, and analyze the working principles of the sensors in measuring acceleration, pressure, and magnetic field. The integrated sensors were fabricated by using micro-electro-mechanical systems (MEMS) technology and packaged by using inner lead bonding technology. When applying a working voltage of 5 V at room temperature, it is possible for the proposed sensors to achieve the acceleration sensitivities of 3.58 mV/g, 2.68 mV/g, and 9.45 mV/g along the x-axis, y-axis, and z-axis (through an amplifying circuit), and the sensitivities towards pressure and magnetic field are 0.28 mV/kPa and 22.44 mV/T, respectively. It is shown that the proposed sensors can measure three-axis acceleration, pressure, and magnetic field. Full article
(This article belongs to the Special Issue Multifunctional-Nanomaterials-Based Semiconductor Devices and Sensors)
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12 pages, 2778 KiB  
Article
Fabrication and Investigation of Graphite-Flake-Composite-Based Non-Invasive Flex Multi-Functional Force, Acceleration, and Thermal Sensor
by Noshin Fatima, Khasan S. Karimov, Farah Adilah Jamaludin and Zubair Ahmad
Micromachines 2023, 14(7), 1358; https://doi.org/10.3390/mi14071358 - 30 Jun 2023
Cited by 1 | Viewed by 2068
Abstract
This work examines the physics of a non-invasive multi-functional elastic thin-film graphite flake–isoprene sulfone composite sensor. The strain design and electrical characterization of the stretching force, acceleration, and temperature were performed. The rub-in technique was used to fabricate graphite flakes and isoprene sulfone [...] Read more.
This work examines the physics of a non-invasive multi-functional elastic thin-film graphite flake–isoprene sulfone composite sensor. The strain design and electrical characterization of the stretching force, acceleration, and temperature were performed. The rub-in technique was used to fabricate graphite flakes and isoprene sulfone into sensors, which were then analyzed for their morphology using methods such as SEM, AFM, X-ray diffraction, and Fourier transform infrared spectroscopy to examine the device’s surface and structure. Sensor impedance was measured from DC to 200 kHz at up to 20 gf, 20 m/s2, and 26–60 °C. Sensor resistance and impedance to stretching force and acceleration at DC and 200 Hz rose 2.4- and 2.6-fold and 2.01- and 2.06-fold, respectively. Temperature-measuring devices demonstrated 2.65- and 2.8-fold decreases in resistance and impedance at DC and 200 kHz, respectively. First, altering the graphite flake composite particle spacing may modify electronic parameters in the suggested multi-functional sensors under stress and acceleration. Second, the temperature impacts particle and isoprene sulfone properties. Due to their fabrication using an inexpensive deposition technique, these devices are environmentally friendly, are simple to build, and may be used in university research in international poverty-line nations. In scientific laboratories, such devices can be used to teach students how various materials respond to varying environmental circumstances. They may also monitor individuals undergoing physiotherapy and vibrating surfaces in a controlled setting to prevent public health risks. Full article
(This article belongs to the Special Issue Multifunctional-Nanomaterials-Based Semiconductor Devices and Sensors)
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