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Nanomaterials
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III-Nitride Semiconductors: Design, Characterization, Applications, and Devices
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III-Nitride Semiconductors: Design, Characterization, Applications, and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 10 January 2025 | Viewed by 6613

Special Issue Editor

Dr. Jing Yang

E-Mail Website
Guest Editor
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Interests: III-nitride semiconductor material and devices

Special Issue Information

Dear Colleagues,

GaN-based materials include GaN, InN, AlN, and their alloys, and their spectra cover ultraviolet, visible, and infrared, rendering them ideal materials for the preparation of light-emitting devices. In recent years, III-nitride semiconductors have become a strategic hotspot and the subject of a high level of global technological competition. Based on III-nitride semiconductor materials, semiconductor lighting has emerged as the center of a huge-scale industry, and its ongoing development in the field of electronic power devices is a key area.

This Special Issue seeks to showcase research papers and review articles on materials and devices based on group-III nitride semiconductors and welcomes contributions devoted to epitaxial growth, optical and electrical properties, structural analysis, defect characterization, light-emitting devices (UV/VIS-LEDs, lasers, and µLEDs), photovoltaics, energy harvesting, photodetectors, transistors, power and RF applications, device processing and fabrication, transport, and switching properties.

We look forward to receiving your submissions.

Dr. Jing Yang
Guest Editor

Manuscript Submission Information

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Keywords

  • III-nitride semiconductor epitaxial growth
  • laser diodes
  • light-emitting diodes
  • photodetectors
  • transistors

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Published Papers (5 papers)

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Research

19 pages, 9100 KiB  
Article
Deep Ultraviolet Excitation Photoluminescence Characteristics and Correlative Investigation of Al-Rich AlGaN Films on Sapphire
by Zhe Chuan Feng, Ming Tian, Xiong Zhang, Manika Tun Nafisa, Yao Liu, Jeffrey Yiin, Benjamin Klein and Ian Ferguson
Nanomaterials 2024, 14(21), 1769; https://doi.org/10.3390/nano14211769 - 4 Nov 2024
Viewed by 615
Abstract
AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of AlxGa1−xN films with high Al fractions (60–87%) grown on [...] Read more.
AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of AlxGa1−xN films with high Al fractions (60–87%) grown on sapphire substrates, including AlN nucleation and buffer layers, by metal–organic chemical vapor deposition (MOCVD). They were initially investigated by high-resolution X-ray diffraction (HR-XRD) and Raman scattering (RS). A set of formulas was deduced to precisely determine x(Al) from HR-XRD data. Screw dislocation densities in AlGaN and AlN layers were deduced. DUV (266 nm) excitation RS clearly exhibits AlGaN Raman features far superior to visible RS. The simulation on the AlGaN longitudinal optical (LO) phonon modes determined the carrier concentrations in the AlGaN layers. The spatial correlation model (SCM) analyses on E2(high) modes examined the AlGaN and AlN layer properties. These high-x(Al) AlxGa1−xN films possess large energy gaps Eg in the range of 5.0–5.6 eV and are excited by a DUV 213 nm (5.8 eV) laser for room temperature (RT) photoluminescence (PL) and temperature-dependent photoluminescence (TDPL) studies. The obtained RTPL bands were deconvoluted with two Gaussian bands, indicating cross-bandgap emission, phonon replicas, and variation with x(Al). TDPL spectra at 20–300 K of Al0.87Ga0.13N exhibit the T-dependences of the band-edge luminescence near 5.6 eV and the phonon replicas. According to the Arrhenius fitting diagram of the TDPL spectra, the activation energy (19.6 meV) associated with the luminescence process is acquired. In addition, the combined PL and time-resolved photoluminescence (TRPL) spectroscopic system with DUV 213 nm pulse excitation was applied to measure a typical AlGaN multiple-quantum well (MQW). The RT TRPL decay spectra were obtained at four wavelengths and fitted by two exponentials with fast and slow decay times of ~0.2 ns and 1–2 ns, respectively. Comprehensive studies on these Al-rich AlGaN epi-films and a typical AlGaN MQW are achieved with unique and significant results, which are useful to researchers in the field. Full article
(This article belongs to the Special Issue III-Nitride Semiconductors: Design, Characterization, Applications, and Devices)
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9 pages, 3378 KiB  
Article
Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN
by Peng Wu, Jianping Liu, Fangzhi Li, Xiaoyu Ren, Aiqin Tian, Wei Zhou, Fan Zhang, Xuan Li, Bolin Zhou, Masao Ikeda and Hui Yang
Nanomaterials 2024, 14(9), 748; https://doi.org/10.3390/nano14090748 - 25 Apr 2024
Viewed by 936
Abstract
The rough morphology at the growth surface results in the non-uniform distribution of indium composition, intentionally or unintentionally doped impurity, and thus impacts the performance of GaN-based optoelectronic and vertical power electronic devices. We observed the morphologies of unintentionally doped GaN homo-epitaxially grown [...] Read more.
The rough morphology at the growth surface results in the non-uniform distribution of indium composition, intentionally or unintentionally doped impurity, and thus impacts the performance of GaN-based optoelectronic and vertical power electronic devices. We observed the morphologies of unintentionally doped GaN homo-epitaxially grown via MOCVD and identified the relations between rough surfaces and the miscut angle and direction of the substrate. The growth kinetics under the effect of the Ehrlich–Schwoebel barrier were studied, and it was found that asymmetric step motions in samples with a large miscut angle or those grown at high temperature were the causes of step-bunching. Meandering steps were believed to be caused by surface free energy minimization for steps with wide terraces or deviating from the [11¯00] m-direction. Full article
(This article belongs to the Special Issue III-Nitride Semiconductors: Design, Characterization, Applications, and Devices)
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15 pages, 11880 KiB  
Article
Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy
by Iwan Susanto, Hong-Shan Liu, Yen-Ten Ho and Ing-Song Yu
Nanomaterials 2024, 14(8), 732; https://doi.org/10.3390/nano14080732 - 22 Apr 2024
Viewed by 1759
Abstract
The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted [...] Read more.
The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted molecular beam epitaxy (PA-MBE) system. The substrate for the growth was a few-layer 2D MoS2 deposited on sapphire using chemical vapor deposition (CVD). Three different Ga fluxes were provided by the gallium source of the K-cell at temperatures of 825, 875, and 925 °C, respectively. After the growth, RHEED, HR-XRD, and TEM were conducted to study the crystal structure of GaN films. The surface morphology was obtained using FE-SEM and AFM. Chemical composition was confirmed by XPS and EDS. Raman and PL spectra were carried out to investigate the optical properties of GaN films. According to the characterizations of GaN films, the van der Waals epitaxial growth mechanism of GaN films changed from 3D to 2D with the increase in Ga flux, provided by higher temperatures of the K-cell. GaN films grown at 750 °C for 3 h with a K-cell temperature of 925 °C demonstrated the greatest crystal quality, chemical composition, and optical properties. The heterostructure of 3D GaN on 2D MoS2 was integrated successfully using the low-temperature PA-MBE technique, which could be applied to novel electronics and optoelectronics. Full article
(This article belongs to the Special Issue III-Nitride Semiconductors: Design, Characterization, Applications, and Devices)
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13 pages, 6185 KiB  
Article
Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes
by Maolin Gao, Jing Yang, Wei Jia, Degang Zhao, Guangmei Zhai, Hailiang Dong and Bingshe Xu
Nanomaterials 2024, 14(7), 649; https://doi.org/10.3390/nano14070649 - 8 Apr 2024
Cited by 1 | Viewed by 1386
Abstract
The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for [...] Read more.
The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV (NUV) GaN-based lasers. We used Crosslight LASTIP for the simulation and theoretical analysis of the energy bands of HBL and EBL. Our simulations suggest that the energy bands of slope-shape HBL and EBL structures are modulated, which could effectively suppress carrier leakage, improve carrier injection efficiency, increase stimulated radiation recombination rate in quantum wells, reduce the threshold current, improve optical field distribution, and, ultimately, improve laser output power. Therefore, using slope-shape HBL and EBL structures can achieve the superior electrical and optical performance of lasers. Full article
(This article belongs to the Special Issue III-Nitride Semiconductors: Design, Characterization, Applications, and Devices)
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9 pages, 4648 KiB  
Communication
Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment
by Xinling Xie, Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Hai Huang, Xin Hu and Min Xu
Nanomaterials 2024, 14(6), 523; https://doi.org/10.3390/nano14060523 - 14 Mar 2024
Cited by 1 | Viewed by 1297
Abstract
The Vth stability and gate reliability of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O2 plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al2O3/AlGaN interface was elevated [...] Read more.
The Vth stability and gate reliability of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O2 plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al2O3/AlGaN interface was elevated to 2.4 eV, which contributed to the suppressed gate leakage current. The time-dependent dielectric breakdown (TDDB) test results showed that the ALD-Al2O3 with the alternating O2 plasma treatment had better quality and reliability. The AlGaN/GaN MIS-HEMT with the alternating O2 plasma treatment demonstrated remarkable advantages in higher Vth stability under high-temperature and long-term gate bias stress. Full article
(This article belongs to the Special Issue III-Nitride Semiconductors: Design, Characterization, Applications, and Devices)
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