Preparation, Modification and Devices Based on Low-Dimensional Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (20 June 2024) | Viewed by 1336

Special Issue Editor


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Guest Editor
Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Interests: graphene nanoribbon; carbon nanotube; black phosphorus; field-effect transistor; photovoltaic device; photoelectric detector; nanoelectronics; nano-optoelectronics

Special Issue Information

Dear Colleagues,

Low-dimensional materials, such as graphene, transition metal dichalcogenides (TMDs), and black phosphorus, which are rising nanomaterials with atomic-scale thickness, have gained tremendous attention in scientific research in recent years. Compared with traditional materials, low-dimensional materials have a large specific surface area and exhibit unique optical and electronic properties, making them highly attractive for various applications in electronics, energy, and optoelectronics.

This Special Issue aims to present comprehensive research on low-dimensional materials, including zero-dimensional, one-dimensional, and two-dimensional systems. This includes the preparation of novel low-dimensional materials, as well as modification to modulate their electrical, optical, and mechanical characteristics, and the extension of the potential applications in electronic and optoelectronic devices. Submissions can cover a wide range of topics. These include, but are not limited to, the following topics:

  • Synthesis and fabrication of low-dimensional materials;
  • Characterization and modification of low-dimensional materials;
  • Applications of low-dimensional materials in devices, such as transistors, LED, detectors, sensors, solar cells, etc.

We look forward to receiving your contributions.

Prof. Dr. Changxin Chen
Guest Editor

Manuscript Submission Information

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Keywords

  • low-dimensional material
  • preparation
  • modification
  • properties
  • device

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Published Papers (1 paper)

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Research

12 pages, 9057 KiB  
Article
Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process
by Xiaohui Zhu, Lei Cao, Guilei Wang and Huaxiang Yin
Nanomaterials 2024, 14(11), 916; https://doi.org/10.3390/nano14110916 - 23 May 2024
Cited by 1 | Viewed by 1055
Abstract
Silicon qubits based on specific SOI FinFETs and nanowire (NW) transistors have demonstrated promising quantum properties and the potential application of advanced Si CMOS devices for future quantum computing. In this paper, for the first time, the quantum transport characteristics for the next-generation [...] Read more.
Silicon qubits based on specific SOI FinFETs and nanowire (NW) transistors have demonstrated promising quantum properties and the potential application of advanced Si CMOS devices for future quantum computing. In this paper, for the first time, the quantum transport characteristics for the next-generation transistor structure of a stack nanosheet (NS) FET and the innovative structure of a fishbone FET are explored. Clear structures are observed by TEM, and their low-temperature characteristics are also measured down to 6 K. Consistent with theoretical predictions, greatly enhanced switching behavior characterized by the reduction of off-state leakage current by one order of magnitude at 6 K and a linear decrease in the threshold voltage with decreasing temperature is observed. A quantum ballistic transport, particularly notable at shorter gate lengths and lower temperatures, is also observed, as well as an additional bias of about 1.3 mV at zero bias due to the asymmetric barrier. Additionally, fishbone FETs, produced by the incomplete nanosheet release in NSFETs, exhibit similar electrical characteristics but with degraded quantum transport due to additional SiGe channels. These can be improved by adjusting the ratio of the channel cross-sectional areas to match the dielectric constants. Full article
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