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Nanomaterials
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Perspectives and New Horizons of Nanowires: From Synthesis to Applications
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Perspectives and New Horizons of Nanowires: From Synthesis to Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (31 March 2022) | Viewed by 8292

Special Issue Editor

Dr. Subhajit Biswas

E-Mail Website
Guest Editor
School of Chemistry, University College Cork, Cork, Ireland
Interests: semiconductor nanomaterials and device; bottom-up fabrication; materials for energy storage and harvesting

Special Issue Information

Dear Colleagues,

Nanowires have attracted increasing interest due to their potential applications in optically active devices, as building blocks for electronic-circuitry, in energy conversion devices, etc.  For all these applications and to fully utilize the potential of nanowires, it is important to understand different nanowire growth paradigms, surface properties, and structural properties such as crystal defects, polytypism, etc. In the last decade, there has been an explosion of work on the growth of nanowires by bottom-up catalytic and templated growth techniques. However, further research is needed to make complete progress in tailoring growth processes for the achievement of morphology, structure, and composition controlled 1-D nanostructures and 1D heterostructures (e.g., core/shell, branched, etc.) The control over the growth and synthesis of new materials and 1-D geometry can exploit the inherent electronic, optoelectronic, electrochemical, and/or thermal properties of the 1D nanostructure for their device implementation. This Special Issue will showcase the research on nanowires covering (but not limited to) the following topics: (i) new insights on the nanowire growth, (ii) novel synthetic methods, new materials and nanowire architectures, (iii) surface, interfaces and crystal structure in 1D nanocrystal, (iv) insights into the physical and chemical properties of nanowires, and (vi) application and device implementation of nanowires. This issue will highlight interdisciplinary research with contributions from varied research fields including materials science, physics, chemistry, engineering and biology.  

Dr. Subhajit Biswas
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

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Keywords

  • Nanowire
  • bottom-up and top-down fabrication
  • Semiconductor nanowires
  • metallic nanowires
  • Physical and chemical properties
  • Nanowire devices

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Published Papers (4 papers)

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Research

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11 pages, 1635 KiB  
Article
Assessing the Viscoelasticity of Photopolymer Nanowires Using a Three-Parameter Solid Model for Bending Recovery Motion
by Jana Kubacková, Cyril Slabý, Denis Horvath, Andrej Hovan, Gergely T. Iványi, Gaszton Vizsnyiczai, Lóránd Kelemen, Gabriel Žoldák, Zoltán Tomori and Gregor Bánó
Nanomaterials 2021, 11(11), 2961; https://doi.org/10.3390/nano11112961 - 4 Nov 2021
Cited by 5 | Viewed by 2283
Abstract
Photopolymer nanowires prepared by two-photon polymerization direct laser writing (TPP-DLW) are the building blocks of many microstructure systems. These nanowires possess viscoelastic characteristics that define their deformations under applied forces when operated in a dynamic regime. A simple mechanical model was previously used [...] Read more.
Photopolymer nanowires prepared by two-photon polymerization direct laser writing (TPP-DLW) are the building blocks of many microstructure systems. These nanowires possess viscoelastic characteristics that define their deformations under applied forces when operated in a dynamic regime. A simple mechanical model was previously used to describe the bending recovery motion of deflected nanowire cantilevers in Newtonian liquids. The inverse problem is targeted in this work; the experimental observations are used to determine the nanowire physical characteristics. Most importantly, based on the linear three-parameter solid model, we derive explicit formulas to calculate the viscoelastic material parameters. It is shown that the effective elastic modulus of the studied nanowires is two orders of magnitude lower than measured for the bulk material. Additionally, we report on a notable effect of the surrounding aqueous glucose solution on the elasticity and the intrinsic viscosity of the studied nanowires made of Ormocomp. Full article
(This article belongs to the Special Issue Perspectives and New Horizons of Nanowires: From Synthesis to Applications)
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13 pages, 3302 KiB  
Article
High-Yield Growth and Tunable Morphology of Bi2Se3 Nanoribbons Synthesized on Thermally Dewetted Au
by Raitis Sondors, Gunta Kunakova, Liga Jasulaneca, Jana Andzane, Edijs Kauranens, Mikhael Bechelany and Donats Erts
Nanomaterials 2021, 11(8), 2020; https://doi.org/10.3390/nano11082020 - 7 Aug 2021
Cited by 5 | Viewed by 2569
Abstract
The yield and morphology (length, width, thickness) of stoichiometric Bi2Se3 nanoribbons grown by physical vapor deposition is studied as a function of the diameters and areal number density of the Au catalyst nanoparticles of mean diameters 8–150 nm formed by [...] Read more.
The yield and morphology (length, width, thickness) of stoichiometric Bi2Se3 nanoribbons grown by physical vapor deposition is studied as a function of the diameters and areal number density of the Au catalyst nanoparticles of mean diameters 8–150 nm formed by dewetting Au layers of thicknesses 1.5–16 nm. The highest yield of the Bi2Se3 nanoribbons is reached when synthesized on dewetted 3 nm thick Au layer (mean diameter of Au nanoparticles ~10 nm) and exceeds the nanoribbon yield obtained in catalyst-free synthesis by almost 50 times. The mean lengths and thicknesses of the Bi2Se3 nanoribbons are directly proportional to the mean diameters of Au catalyst nanoparticles. In contrast, the mean widths of the Bi2Se3 nanoribbons do not show a direct correlation with the Au nanoparticle size as they depend on the contribution ratio of two main growth mechanisms—catalyst-free and vapor–liquid–solid deposition. The Bi2Se3 nanoribbon growth mechanisms in relation to the Au catalyst nanoparticle size and areal number density are discussed. Determined charge transport characteristics confirm the high quality of the synthesized Bi2Se3 nanoribbons, which, together with the high yield and tunable morphology, makes these suitable for application in a variety of nanoscale devices. Full article
(This article belongs to the Special Issue Perspectives and New Horizons of Nanowires: From Synthesis to Applications)
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12 pages, 3745 KiB  
Article
Twisting of a Pristine α-Fe Nanowire: From Wild Dislocation Avalanches to Mild Local Amorphization
by Yang Yang, Xiangdong Ding, Jun Sun and Ekhard K. H. Salje
Nanomaterials 2021, 11(6), 1602; https://doi.org/10.3390/nano11061602 - 18 Jun 2021
Cited by 5 | Viewed by 2249
Abstract
The torsion of pristine α-Fe nanowires was studied by molecular dynamics simulations. Torsion-induced plastic deformation in pristine nanowires is divided into two regimes. Under weak torsion, plastic deformation leads to dislocation nucleation and propagation. Twisting-induced dislocations are mainly 12<111> screw dislocations [...] Read more.
The torsion of pristine α-Fe nanowires was studied by molecular dynamics simulations. Torsion-induced plastic deformation in pristine nanowires is divided into two regimes. Under weak torsion, plastic deformation leads to dislocation nucleation and propagation. Twisting-induced dislocations are mainly 12<111> screw dislocations in a <112>-oriented nanowire. The nucleation and propagation of these dislocations were found to form avalanches which generate the emission of energy jerks. Their probability distribution function (PDF) showed power laws with mixing between different energy exponents. The mixing stemmed from simultaneous axial and radial dislocation movements. The power-law distribution indicated strongly correlated ‘wild’ dislocation dynamics. At the end of this regime, the dislocation pattern was frozen, and further twisting of the nanowire did not change the dislocation pattern. Instead, it induced local amorphization at the grip points at the ends of the sample. This “melting” generated highly dampened, mild avalanches. We compared the deformation mechanisms of twinned and pristine α-Fe nanowires under torsion. Full article
(This article belongs to the Special Issue Perspectives and New Horizons of Nanowires: From Synthesis to Applications)
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Review

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40 pages, 7120 KiB  
Review
A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications
by Adrià Garcia-Gil, Subhajit Biswas and Justin D. Holmes
Nanomaterials 2021, 11(8), 2002; https://doi.org/10.3390/nano11082002 - 4 Aug 2021
Cited by 8 | Viewed by 4688
Abstract
Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the [...] Read more.
Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices. Full article
(This article belongs to the Special Issue Perspectives and New Horizons of Nanowires: From Synthesis to Applications)
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