Nanomaterials for Photonics: Advances and Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (30 September 2023) | Viewed by 20570

Special Issue Editors


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Guest Editor
Microphotonics Laboratory, National Institute for R&D in Microtechnologies (IMT-Bucharest), Bucharest, Romania
Interests: photodetectors; integrated optics; optical chemo- and biosensors; metamaterials; new materials (quantum dots, graphene, hybrid nanocomposites) for photonics

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Guest Editor
Nanobiotechnology Laboratory, National Institute for R&D in Microtechnologies (IMT-Bucharest), Bucharest, Romania
Interests: nanomaterials; nanocomposites; heterostructure engineering; energy harvesting and storage; optoelectronic devices; sensors
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Special Issue Information

Dear Colleagues,

Photonics—the science of creating, manipulating, transmitting, and detecting light—has demonstrated the potential to bring significant progress and even to revolutionize a large range of domains, including healthcare, environment monitoring, energy generation and conservation, high-speed telecommunications, quantum computing, IoT, manufacturing technologies, transportation, and agriculture.

To improve the performance of photonic devices and circuits and add new functionalities, advances in optical materials and nanofabrication techniques are required.

This Special Issue of Nanomaterials will focus on recent advances and trends in developing advanced materials with new optical, photonic, and electrical properties for applications in photonics.

We invite interested authors to submit papers that cover synthesis, investigations, and fundamental understanding of new of structures and physical/chemical/optical properties, and characterization and application of new materials for photonics. Papers should demonstrate the applicability of the new materials in photonics and the added value in terms of performance, cost, and/or functionalities.

Papers presenting advanced device concepts and integration of the new materials with electronics will be highly appreciated.

Dr. Dana Cristea
Dr. Mihaela Kusko
Guest Editors

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Keywords

  • Nanoparticles, nanowires, 2D materials, 3D nanostructured materials
  • Hybrid nanocomposites
  • Hybrid metal oxide materials (0D, 1D, 2D, 3D)
  • Materials for nonlinear optics
  • Metamaterials, metasurfaces, plasmonics
  • Advanced nanomaterials for photodetectors and light-emitting devices
  • Materials for integrated quantum photonics
  • New materials for optical fiber and waveguides
  • Emerging solar cell absorbers
  • Novel and innovative approaches that allow monolithic and heterogeneous integration of the photonic devices based on new materials on silicon technology.

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Published Papers (6 papers)

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Research

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16 pages, 10783 KiB  
Article
Multilevel Spiral Axicon for High-Order Bessel–Gauss Beams Generation
by Rebeca Tudor, George Andrei Bulzan, Mihai Kusko, Cristian Kusko, Viorel Avramescu, Dan Vasilache and Raluca Gavrila
Nanomaterials 2023, 13(3), 579; https://doi.org/10.3390/nano13030579 - 31 Jan 2023
Cited by 11 | Viewed by 2374
Abstract
This paper presents an efficient method to generate high-order Bessel–Gauss beams carrying orbital angular momentum (OAM) by using a thin and compact optical element such as a multilevel spiral axicon. This approach represents an excellent alternative for diffraction-free OAM beam generation instead of [...] Read more.
This paper presents an efficient method to generate high-order Bessel–Gauss beams carrying orbital angular momentum (OAM) by using a thin and compact optical element such as a multilevel spiral axicon. This approach represents an excellent alternative for diffraction-free OAM beam generation instead of complex methods based on a doublet formed by a physical spiral phase plate and zero-order axicon, phase holograms loaded on spatial light modulators (SLMs), or the interferometric method. Here, we present the fabrication process for axicons with 16 and 32 levels, characterized by high mode conversion efficiency and good transmission for visible light (λ = 633 nm wavelength). The Bessel vortex states generated with the proposed diffractive optical elements (DOEs) can be exploited as a very useful resource for optical and quantum communication in free-space channels or in optical fibers. Full article
(This article belongs to the Special Issue Nanomaterials for Photonics: Advances and Applications)
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10 pages, 15639 KiB  
Article
Tunable Photoresponse in a Two-Dimensional Superconducting Heterostructure
by Zijie Ji, Ruan Zhang, Shuangxing Zhu, Feifan Gu, Yunmin Jin, Binghe Xie, Jiaxin Wu and Xinghan Cai
Nanomaterials 2023, 13(3), 421; https://doi.org/10.3390/nano13030421 - 19 Jan 2023
Viewed by 2038
Abstract
The photo-induced superconducting phase transition is widely used in probing the physical properties of correlated electronic systems and to realize broadband photodetection with extremely high responsivity. However, such photoresponse is usually insensitive to electrostatic doping due to the high carrier density of the [...] Read more.
The photo-induced superconducting phase transition is widely used in probing the physical properties of correlated electronic systems and to realize broadband photodetection with extremely high responsivity. However, such photoresponse is usually insensitive to electrostatic doping due to the high carrier density of the superconductor, restricting its applications in tunable optoelectronic devices. In this work, we demonstrate the gate voltage modulation to the photoresponsivity in a two-dimensional NbSe2-graphene heterojunction. The superconducting critical current of the NbSe2 relies on the gate-dependent hot carrier generation in graphene via the Joule heating effect, leading to the observed shift of both the magnitude and peak position of the photoresponsivity spectra as the gate voltage changes. This heating effect is further confirmed by the temperature and laser-power-dependent characterization of the photoresponse. In addition, we investigate the spatially-resolved photocurrent, finding that the superconductivity is inhomogeneous across the junction area. Our results provide a new platform for designing tunable superconducting photodetector and indicate that the photoresponse could be a powerful tool in studying the local electronic properties and phase transitions in low-dimensional superconducting systems. Full article
(This article belongs to the Special Issue Nanomaterials for Photonics: Advances and Applications)
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11 pages, 3128 KiB  
Article
Bowtie Nanoantenna Coupled Metal-Oxide-Silicon (p-Doped) Diode for 28.3 THz IR Rectification
by Nasim Al Islam and Sangjo Choi
Nanomaterials 2022, 12(22), 3940; https://doi.org/10.3390/nano12223940 - 9 Nov 2022
Cited by 3 | Viewed by 1999
Abstract
Low-temperature waste heat in the infrared (IR) wavelength region offers an opportunity to harvest power from waste energy and requires further investigation in order to find efficient conversion techniques. Although grating-coupled metal-oxide-semiconductor (MOS) diode devices offer efficient conversion from low and moderate-temperature thermal [...] Read more.
Low-temperature waste heat in the infrared (IR) wavelength region offers an opportunity to harvest power from waste energy and requires further investigation in order to find efficient conversion techniques. Although grating-coupled metal-oxide-semiconductor (MOS) diode devices offer efficient conversion from low and moderate-temperature thermal sources, the integration of such diodes with a nanoantenna structure has yet to be explored. We propose a bowtie nanoantenna coupled with a p-doped MOS diode for IR to direct current (DC) conversion without any bias voltage at 28.3 THz. The nanoantenna was designed and optimized to provide maximum field enhancement in a 4 nm-thick oxide layer at the resonant frequency. The device was fabricated following the complementary MOS (CMOS) fabrication process and measured in a custom DC and optical characterization setup using a 10.6 μm wavelength CO2 laser. The results reveal two different types of devices with linear and nonlinear I-V curves having kΩ and MΩ zero-bias resistance, respectively. The linear device generates a micron-level open-circuit voltage (Voc) with clear polarization dependence from the laser input, but the nonlinear case suffers from a weak noise-like signal. Finally, we analyze two types of devices using thermoelectric and tunneling effects and discuss the future direction of nanoantenna-integrated MOS devices for efficient IR harvesters. Full article
(This article belongs to the Special Issue Nanomaterials for Photonics: Advances and Applications)
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14 pages, 23554 KiB  
Article
Selective Mid-IR Metamaterial-Based Gas Sensor System: Proof of Concept and Performances Tests
by Laura Mihai, Razvan Mihalcea, Roxana Tomescu, Costel Paun and Dana Cristea
Nanomaterials 2022, 12(6), 1009; https://doi.org/10.3390/nano12061009 - 18 Mar 2022
Cited by 8 | Viewed by 3439
Abstract
In this paper, we propose a highly selective and efficient gas detection system based on a narrow-band IR metasurface emitter integrated with a resistive heater. In order to develop the sensor for the detection of specific gases, both the microheater and metasurface structures [...] Read more.
In this paper, we propose a highly selective and efficient gas detection system based on a narrow-band IR metasurface emitter integrated with a resistive heater. In order to develop the sensor for the detection of specific gases, both the microheater and metasurface structures have been optimized in terms of geometry and materials. Devices with different metamaterial structures and geometries for the heater have been tested. Our prototype showed that the modification of the spectral response of metasurface-based structures is easily achieved by adapting the geometrical parameters of the plasmonic micro-/nanostructures in the metasurface. The advantage of this system is the on-chip integration of a thermal source with broad IR radiation with the metasurface structure, obtaining a compact selective radiation source. From the experimental data, narrow emission peaks (FWHM as low as 0.15 μm), corresponding to the CO2, CH4, and CO absorption bands, with a radiant power of a few mW were obtained. It has been shown that, by changing the bias voltage, a shift of a few tens of nm around the central emission wavelength can be obtained, allowing fine optimization for gas detection applications. Full article
(This article belongs to the Special Issue Nanomaterials for Photonics: Advances and Applications)
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14 pages, 28597 KiB  
Article
Plasmon-Enhanced Photoresponse of Self-Powered Si Nanoholes Photodetector by Metal Nanowires
by Pericle Varasteanu, Antonio Radoi, Oana Tutunaru, Anton Ficai, Razvan Pascu, Mihaela Kusko and Iuliana Mihalache
Nanomaterials 2021, 11(9), 2460; https://doi.org/10.3390/nano11092460 - 21 Sep 2021
Cited by 8 | Viewed by 3123
Abstract
In this work, we report the development of self-powered photodetectors that integrate silicon nanoholes (SiNHs) and four different types of metal nanowires (AgNWs, AuNWs, NiNWs, PtNWs) applied on the SiNHs’ surface using the solution processing method. The effectiveness of the proposed architectures is [...] Read more.
In this work, we report the development of self-powered photodetectors that integrate silicon nanoholes (SiNHs) and four different types of metal nanowires (AgNWs, AuNWs, NiNWs, PtNWs) applied on the SiNHs’ surface using the solution processing method. The effectiveness of the proposed architectures is evidenced through extensive experimental and simulation analysis. The AgNWs/SiNHs device showed the highest photo-to-dark current ratio of 2.1 × 10−4, responsivity of 30 mA/W and detectivity of 2 × 1011 Jones along with the lowest noise equivalent power (NEP) parameter of 2.4 × 10−12 WHz−1/2 in the blue light region. Compared to the bare SiNHs device, the AuNWs/SiNHs device had significantly enhanced responsivity up to 15 mA/W, especially in the red and near-infrared spectral region. Intensity-modulated photovoltage spectroscopy (IMVS) measurements revealed that the AgNWs/SiNHs device generated the longest charge carrier lifetime at 470 nm, whereas the AuNWs/SiNHs showed the slowest recombination rate at 627 nm. Furthermore, numerical simulation confirmed the local field enhancement effects at the MeNWs and SiNHs interface. The study demonstrates a cost-efficient and scalable strategy to combine the superior light harvesting properties of SiNHs with the plasmonic absorption of metallic nanowires (MeNWs) towards enhanced sensitivity and spectral-selective photodetection induced by the local surface plasmon resonance effects. Full article
(This article belongs to the Special Issue Nanomaterials for Photonics: Advances and Applications)
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Review

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25 pages, 6488 KiB  
Review
A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers
by Mahmoud Muhanad Fadhel, Norazida Ali, Haroon Rashid, Nurfarhana Mohamad Sapiee, Abdulwahhab Essa Hamzah, Mohd Saiful Dzulkefly Zan, Norazreen Abd Aziz and Norhana Arsad
Nanomaterials 2021, 11(9), 2367; https://doi.org/10.3390/nano11092367 - 12 Sep 2021
Cited by 29 | Viewed by 4895
Abstract
Rhenium Disulfide (ReS2) has evolved as a novel 2D transition-metal dichalcogenide (TMD) material which has promising applications in optoelectronics and photonics because of its distinctive anisotropic optical properties. Saturable absorption property of ReS2 has been utilized to fabricate saturable absorber [...] Read more.
Rhenium Disulfide (ReS2) has evolved as a novel 2D transition-metal dichalcogenide (TMD) material which has promising applications in optoelectronics and photonics because of its distinctive anisotropic optical properties. Saturable absorption property of ReS2 has been utilized to fabricate saturable absorber (SA) devices to generate short pulses in lasers systems. The results were outstanding, including high-repetition-rate pulses, large modulation depth, multi-wavelength pulses, broadband operation and low saturation intensity. In this review, we emphasize on formulating SAs based on ReS2 to produce pulsed lasers in the visible, near-infrared and mid-infrared wavelength regions with pulse durations down to femtosecond using mode-locking or Q-switching technique. We outline ReS2 synthesis techniques and integration platforms concerning solid-state and fiber-type lasers. We discuss the laser performance based on SAs attributes. Lastly, we draw conclusions and discuss challenges and future directions that will help to advance the domain of ultrafast photonic technology. Full article
(This article belongs to the Special Issue Nanomaterials for Photonics: Advances and Applications)
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