Recent Progress on Two-Dimensional Materials Heterostructures

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (31 July 2023) | Viewed by 4834

Special Issue Editors


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Guest Editor
Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Rome, Italy
Interests: nanotechnology; two-dimensional materials; two-dimensional semiconductors; metal-semiconductor interface; van der Waals heterostructures; devices; optoelectronics
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Guest Editor
School of Materials Science and Engineering, Northwestern Polytechnical University, Youyi West Road 127#, Xi’an, China
Interests: semiconductors; devices; two-dimensional materials; optoelectronics; strain engineering; metal-semiconductor contacts; van der Waals heterostructures
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The fabrication and understanding of heterostructures, especially semiconductor–semiconductor junctions and metal–semiconductor heterostructures, has had a profound impact on modern society. Most electronic and renewable-energy-generating devices that we currently use are in fact based on the union of dissimilar materials, which can give rise to emergent effects that are not simply the sum of the individual effects. Two-dimensional (2D) materials, such as van der Waals materials, layered perovskites or metal-organic frameworks, are characterized by outstanding optical, electrical, and mechanical properties. Thanks to their extreme aspect ratio, these materials are especially suited to the fabrication of heterostructures, and in recent years novel electronic and optoelectronic devices with exceptional performances have been reported. Apart from 2D–2D heterostructures, a second class of heterostructures has arisen, namely mixed-dimensional heterostructures based on the combination of 2D materials with 3D, 1D or 0D ones.

This Special Issue aims to collect original research articles and reviews about heterojunctions based on 2D materials, from both fundamental and application-oriented perspectives. We solicit papers dealing with the fabrication and properties of 2D material heterojunctions, or with their use in electronic or optoelectronic devices and sensors.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Van der Waals materials: graphene, black phosphorus, transition metal chalcogenides, III-VI group, MXenes, hexagonal boron nitride, 2D oxides, carbides, and nitrides;
  • 2D metal-organic frameworks, 2D perovskites;
  • Planar (lateral) and vertical 2D–2D heterostructures and their fabrication;
  • 2D–2D heterojunctions and mixed-dimensionality heterojunctions: 2D–1D, 2D–0D, 3D–2D;
  • Van der Waals heterostructures, superlattices, Moiré patterns, interlayer phenomena, interlayer excitons;
  • Advanced devices and applications;
  • Photonics, optics, electronics, optoelectronics, valleytronics, twistronics, straintronics;
  • Metal–semiconductor ohmic and Schottky contacts;
  • Semiconductor–semiconductor heterojunctions of type I, II, and III contacts;
  • Semiconductor–semiconductor type I, II, and III contacts.

We look forward to receiving your contributions.

Dr. Riccardo Frisenda
Dr. Qinghua Zhao
Guest Editors

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Keywords

  • van der waals materials
  • 2D metal-organic frameworks and 2D perovskites
  • 2D–2D heterostructures
  • mixed-dimensionality heterostructures: 2D–1D, 2D–0D, 3D–2D
  • heterostructure fabrication
  • van der waals heterostructures, superlattices, moiré patterns
  • advanced devices and applications
  • photonics, optics, electronics, optoelectronics
  • metal–semiconductors
  • semiconductor–semiconductor heterojunctions

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Published Papers (1 paper)

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Review

19 pages, 5127 KiB  
Review
Color Centers in Hexagonal Boron Nitride
by Suk Hyun Kim, Kyeong Ho Park, Young Gie Lee, Seong Jun Kang, Yongsup Park and Young Duck Kim
Nanomaterials 2023, 13(16), 2344; https://doi.org/10.3390/nano13162344 - 15 Aug 2023
Cited by 2 | Viewed by 4456
Abstract
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 [...] Read more.
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers. Full article
(This article belongs to the Special Issue Recent Progress on Two-Dimensional Materials Heterostructures)
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