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Plasma Sensors and Their Applications

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: 25 January 2025 | Viewed by 5765

Special Issue Editor


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Guest Editor
Institute of Plasma physics, Chinese Academy of Science, Hefei 230031, China
Interests: plasma physics; high temperature plasma diagnosis; plasma sensor

Special Issue Information

Dear Colleagues,

Plasma Science and Engineering is a multidisciplinary area encompassing some of the most exciting fundamental and applied research themes in today's scientific landscape, with an extraordinarily broad impact in science, technology, and industry.

Measuring the parameters of plasmas, usually termed as plasma diagnostics, is a key challenge in these applications, both for understanding the basic principles and, in many cases, for the optimization and control of processes. There are many different measurement and diagnostics systems to detect plasma parameters in magnetic confinement fusion devices, such as induction coils, CCD, laser-aided devices, spectroscopy, and microwaves, all of which are used for machine operation and physics analysis.

Plasma diagnostics is based on a wide variety of characteristic plasma phenomena and, although most of the techniques used are already well established, it remains a highly challenging and fascinating discipline.

This Special Issue will cover the methods, instruments, and experimental techniques used to measure the properties of plasma. 

Dr. Biao Shen
Guest Editor

Manuscript Submission Information

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Keywords

  • plasma sensors
  • laser-produced plasma
  • plasma measurement
  • plasma diagnostics—interferometry, spectroscopy, and imaging

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Published Papers (2 papers)

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Research

11 pages, 8448 KiB  
Article
Design of Three-Dimensional Magnetic Probe System for Space Plasma Environment Research Facility (SPERF)
by Jihua Yang, Jiayin Xie, Wenbin Ling, Jian Guan, Kai Huang, Fupeng Chen, Gaoyuan Peng, Huibo Tang, Hua Zhou and Peng E
Sensors 2024, 24(16), 5302; https://doi.org/10.3390/s24165302 - 16 Aug 2024
Viewed by 3734
Abstract
A three-dimensional magnetic probe system has been designed and implemented at the Space Plasma Environment Research Facility (SPERF). This system has been developed to measure the magnetic field with high spatial and temporal resolution, enabling studies of fundamental processes in space physics, such [...] Read more.
A three-dimensional magnetic probe system has been designed and implemented at the Space Plasma Environment Research Facility (SPERF). This system has been developed to measure the magnetic field with high spatial and temporal resolution, enabling studies of fundamental processes in space physics, such as magnetic reconnection at the Earth’s magnetopause, on the basis of SPERF. The system utilizes inductive components as sensors, arranged in an array and soldered onto a printed circuit board (PCB), achieving a spatial resolution of 2.5 mm. The system’s electrical parameters have been measured, and its amplitude–frequency response characteristics have been simulated. The system has demonstrated good performance with response capabilities below 50 kHz. The experimental setup and results are discussed, highlighting the system’s effectiveness in accurately measuring weak magnetic signals and its suitability for magnetic reconnection experiments. Full article
(This article belongs to the Special Issue Plasma Sensors and Their Applications)
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12 pages, 3950 KiB  
Article
Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction
by Nguyen Hoang Tung, Heesoo Lee, Duy Khoe Dinh, Dae-Woong Kim, Jin Young Lee, Geon Woong Eom, Hyeong-U Kim and Woo Seok Kang
Sensors 2024, 24(10), 3089; https://doi.org/10.3390/s24103089 - 13 May 2024
Viewed by 1545
Abstract
Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4 [...] Read more.
Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4 and SiO2 in an NF3/O2 radio-frequency glow discharge. The etch rate linearly depended on the source and bias powers, whereas the etch selectivity was affected by the power and ratio of the gas mixture. We found that the selectivity can be controlled by lowering the power with a suitable gas ratio, which affects the surface reaction during the etching process. X-ray photoelectron spectroscopy of the Si3N4 and QMS measurements support the effect of surface reaction on the selectivity change by surface oxidation and nitrogen reduction with the increasing flow of O2. We suggest that the creation of SiOxNy bonds on the surface by NO oxidation is the key mechanism to change the etch selectivity of Si3N4 over SiO2. Full article
(This article belongs to the Special Issue Plasma Sensors and Their Applications)
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