Chirality Applied in Spintronics, Ferroics and Light–Matter Interactions

A special issue of Symmetry (ISSN 2073-8994). This special issue belongs to the section "Physics".

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 12081

Special Issue Editors


E-Mail Website
Guest Editor
School of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
Interests: spintronics; magnetic semiconductors; chiral molecules; transition metal ferromagnets

E-Mail Website
Guest Editor
Department of Applied Mechanics, School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
Interests: ferroelectrics; single crystal growth; ferroelectric domain; scanning probe microscope
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: low dimensional materials and structures; polarization optics; micro/nano sensing

Special Issue Information

Dear Colleagues,

Chirality is a property of symmetry that manifests across multiple length scales and throughout the natural world. Considerations of chirality are embedded into spintronics, ferroics (ferroelectrics, ferromagnets, etc.) and light–matter interactions. Understanding and controlling chiral properties in these research areas remain of high academic importance for investigating and exploiting novel materials. This will undoubtedly lead to breakthroughs that pave the way for new applications across many sectors, including molecular spintronics, memory devices, topological orbital texture, neuromorphic computing, next-generation displays and biosensing.

Spin–orbit interaction refers to the interplay between the polarizational (spin) and spatial (orbital) degrees of freedom. Depending on the handedness of the chiral materials or structrues, electrons or photons of a certain spin are transmitted more easily in one direction as opposed to the other, due to structural dissymmetry and the resulting spin–orbit coupling. Understanding how interfacial parameters beyond chirality affect the spin-selectivity is critical to study this phenomenon. The investigations of chiral structures in spintronics, ferroics and light–matter interactions offer a novel platform for mutual interconversion between photons, excitons, charges and spins.

The presented Special Issue is open to contributions (original research papers, reviews and perspective articles) related to recent advances in material and optical systems related to chirality and broken inversion symmetry. The topics of interest for this issue include but are not limited to:

  • Chiral-induced spin selectivity in double-stranded DNA, oligopeptides, large proteins, etc.
  • Chiral organic and inorganic crystals and their assemblies.
  • Spintronic devices and related physics using chiral materials.
  • Chiral-induced ferroelectricity and its device applications.
  • Chiral domains and their applications.
  • Polarized photodetectors and optoelectronic devices.
  • Chiral optics, chiral metasurfaces and applications.

Dr. Xiaolei Wang
Dr. Xueyun Wang
Dr. Chao Shen
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Symmetry is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • chiral material
  • chiral domain
  • spin–orbit interaction
  • spin selectivity

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Published Papers (5 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

8 pages, 2549 KiB  
Article
MoO3 Interlayer Modification on the Electronic Structure of Co/BP Interface
by Baoxing Liu, Haipeng Xie, Yuan Zhao, Dongmei Niu and Yongli Gao
Symmetry 2022, 14(11), 2448; https://doi.org/10.3390/sym14112448 - 18 Nov 2022
Cited by 2 | Viewed by 1897
Abstract
The modification by molybdenum trioxide (MoO3) buffer layer on the electronic structure between Co and black phosphorus (BP) was investigated with ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). It was found that the MoO3 buffer layer could effectively [...] Read more.
The modification by molybdenum trioxide (MoO3) buffer layer on the electronic structure between Co and black phosphorus (BP) was investigated with ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). It was found that the MoO3 buffer layer could effectively prevent the destruction of the outermost BP lattice during the Co deposition, with the symmetry of the lattice remaining maintained. There is a noticeable interfacial charge transfer in addition to the chemical reaction between Co and MoO3. The growth pattern of Co deposited onto the MoO3/BP film is the island growth mode. The observations reveal the significance of a MoO3 buffer layer on the electronic structure between Co and black phosphorus and provide help for the design of high-performance Co/BP-based spintronic devices. Full article
Show Figures

Figure 1

16 pages, 2934 KiB  
Article
Influence of Symmetry from Crystal Structure and Chemical Environments of Magnetic Ions on the Fully Compensated Ferrimagnetism of Full Heusler Cr2YZ and Mn2YZ Alloys
by Zhigang Wu, Yajiu Zhang, Zhuhong Liu and Xingqiao Ma
Symmetry 2022, 14(5), 988; https://doi.org/10.3390/sym14050988 - 12 May 2022
Cited by 2 | Viewed by 2366
Abstract
Fully compensated ferrimagnets do not create any magnetic stray field and allow for a completely polarized current of charges. As a result, these alloys show promising prospects for applications as spintronic devices. In this paper, we investigated the phase stability, the site preference, [...] Read more.
Fully compensated ferrimagnets do not create any magnetic stray field and allow for a completely polarized current of charges. As a result, these alloys show promising prospects for applications as spintronic devices. In this paper, we investigated the phase stability, the site preference, the tetragonal distortion and the influence of symmetry from the crystal structure and chemical environments of magnetic ions on the magnetic properties of Cr2YZ and Mn2YZ (Y = void, Ni, Cu, and Zn; Z = Ga, Ge, and As) full Heusler alloys by first-principles calculations. We found that the selected Cr2-based alloys, except for Cr2NiGa and Cr2NiGe, prefer to crystallize in the centrosymmetric L21-type structure, while the selected Mn2-based alloys, except for Mn2CuAs, Mn2ZnGe and Mn2ZnAs, tend to crystallize in the non-centrosymmetric XA-type structure. Due to the symmetry, the antiferromagnetism of the selected L21-type alloys is very stable, and no spin-polarized density of states could be generated. In contrast, the magnetic moment of the selected XA-type alloys depends heavily on the number of valence electrons and tetragonal distortion, and spin-polarized density of states is generated. Therefore, the selected alloys with L21-type structures and their tetragonal-distorted structure are potential candidates for conventional antiferromagnets, while those with XA-type structure and their tetragonal-distorted structure are promising candidates for (fully) compensated ferrimagnets. Full article
Show Figures

Figure 1

13 pages, 3019 KiB  
Article
Behavior of Vortex-Like Inhomogeneities Originating in Magnetic Films with Modulated Uniaxial Anisotropy in a Planar Magnetic Field
by Robert M. Vakhitov, Rostislav V. Solonetsky, Aygul A. Akhmetova and Mikhail A. Filippov
Symmetry 2022, 14(3), 612; https://doi.org/10.3390/sym14030612 - 18 Mar 2022
Viewed by 2074
Abstract
This paper investigates the processes of magnetization reversal of a uniaxial ferromagnetic disk containing a columnar defect of the potential well type in perpendicular and planar magnetic fields. The characteristic stages of magnetization reversal of the domain structure of the disk and vortex-like [...] Read more.
This paper investigates the processes of magnetization reversal of a uniaxial ferromagnetic disk containing a columnar defect of the potential well type in perpendicular and planar magnetic fields. The characteristic stages of magnetization reversal of the domain structure of the disk and vortex-like inhomogeneities forming on the defect are determined. The critical fields of their existence are found and an explanation is given for the presence of a significant difference in their values for the perpendicular and planar fields of the defect magnetization reversal. The role of chirality in the behavior of a Bloch-type magnetic skyrmion during the magnetization reversal of a defect in a planar field is shown. Full article
Show Figures

Figure 1

11 pages, 2323 KiB  
Article
The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate
by Fabi Zhang, Lijie Huang, Jin Zhang, Zhiwen Liang, Chenhui Zhang, Shangfeng Liu, Wei Luo, Junjie Kang, Jiakang Cao, Tai Li, Qi Wang and Ye Yuan
Symmetry 2022, 14(3), 573; https://doi.org/10.3390/sym14030573 - 14 Mar 2022
Cited by 7 | Viewed by 2557
Abstract
In the present work, a single-crystalline epitaxial nonpolar a-plane AlN film with in-plane two-folder symmetries was successfully achieved on an r-plane sapphire substrate, by combining physical vapor deposition and a high-temperature annealing technique. Moreover, by varying the AlN thickness, the evolution [...] Read more.
In the present work, a single-crystalline epitaxial nonpolar a-plane AlN film with in-plane two-folder symmetries was successfully achieved on an r-plane sapphire substrate, by combining physical vapor deposition and a high-temperature annealing technique. Moreover, by varying the AlN thickness, the evolution of crystalline quality and structure were systematically investigated using X-ray diffraction, Raman spectroscopy, and atomic force microscopy. The crystalline quality was much improved by the annealing treatment. Most importantly, when the thickness of AlN was increased up to 1000 nm, the AlN lattice was found to endure strong distortion along the out-of-plane direction, and the lattice showed an obvious expansion. The change of the surface morphology induced by high-temperature annealing was also tracked, and the morphology displayed structural anisotropy along the [11¯00] direction. Our results act as a crucial platform to better understand and employ the nonpolar AlN template; in particular, it is of importance for subsequent device fabrication. Full article
Show Figures

Figure 1

8 pages, 1770 KiB  
Article
Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation
by Yijian Jiang, Haoqi Tan and Yan Zhao
Symmetry 2021, 13(10), 1935; https://doi.org/10.3390/sym13101935 - 14 Oct 2021
Cited by 1 | Viewed by 1886
Abstract
The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a p-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in [...] Read more.
The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a p-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I–V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg–H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O2-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V. Full article
Show Figures

Figure 1

Back to TopTop