Thin-Film Photovoltaics: Constituents and Devices

Topic Information

Dear Colleagues,

As a researcher that focuses on thin-film materials for photovoltaic (PV), sensing, photocatalytic and other optoelectronic applications, I have observed a conceptual opportunity for joining a plethora of similar reports under the frame of a new Topic, “Thin-Film Photovoltaics: Constituents and Devices”. Existing journals often host PV-related reports, though with limited PV recognition. I am confident that this Topic can foster visibility for reports related to thin-film solar cells. Thin-film (TF) PV systems are of particular interest as they struggle in their transition from fundamental research into commercially available solutions. Generally, TFPVs are cheap but with limited efficiencies, so to boost the extent of the ongoing early stage research grouping of reports (theoretical and experimental) on TFPV science, as well as TFPV constituents, processing, modeling and performance, a favorable strategy arises for advancing the in-depth understanding of the mechanisms behind the design of PV systems and TF constituents. Particularly preferred are reports that condense interdisciplinary information, corroborating well with the complex multidisciplinary technical nature of emerging TFPV systems. The Topic aims to publish research relevant to TFPV: (1) design—novel compositions, compounds, morphologies, structures, concepts, modeling; (2) synthesis—new routes and modifications, constituents, development, and post-processing; (3) deposition—new routes, modifications, tools, and development; (4) characterization—techniques monitoring (micro)structural, optoelectronic, thermodynamic, and other materials’ repercussions, including novel or particularly complex in situ or in operando multi-technique experiments; (5) compatibility—interfacing issues (surface compatibility, boundary conditions); (6) functionality—performance, testing, and stability. Subsections: o Preparation and characterization of general TFPV constituent materials and layers o Perovskite TF solar cells (PSC) o Organic TF photovoltaics (OPV) o Quantum dot TF solar cells (QDSC) o CIGS, CZTS, CdTe TF photovoltaics o Dye-sensitized TF solar cells (DSSC) o Modeling and computing TF performance

Dr. Vilko Mandić
Dr. Ivana Panžić
Dr. Ivana Capan
Dr. Luka Pavić
Topic Editors

Keywords

Participating Journals

Journal Name	Impact Factor	CiteScore	Launched Year	First Decision (median)	APC
Catalysts catalysts	3.8	6.8	2011	12.9 Days	CHF 2200
Coatings coatings	2.9	5.0	2011	13.7 Days	CHF 2600
Materials materials	3.1	5.8	2008	15.5 Days	CHF 2600
Molecules molecules	4.2	7.4	1996	15.1 Days	CHF 2700
Nanomaterials nanomaterials	4.4	8.5	2010	13.8 Days	CHF 2900

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Published Papers (8 papers)

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All Catalysts Coatings Materials Molecules Nanomaterials

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31 pages, 4894 KiB  

Open AccessReview

Advancements and Prospects in Perovskite Solar Cells: From Hybrid to All-Inorganic Materials

by Fernando Velcic Maziviero, Dulce M. A. Melo, Rodolfo L. B. A. Medeiros, Ângelo A. S. Oliveira, Heloísa P. Macedo, Renata M. Braga and Edisson Morgado, Jr.

Nanomaterials 2024, 14(4), 332; https://doi.org/10.3390/nano14040332 - 8 Feb 2024

Cited by 10 | Viewed by 4093

Abstract

Hybrid perovskites, materials composed of metals and organic substances in their structure, have emerged as potential materials for the new generation of photovoltaic cells due to a unique combination of optical, excitonic and electrical properties. Inspired by sensitization techniques on TiO₂ substrates [...] Read more.

Hybrid perovskites, materials composed of metals and organic substances in their structure, have emerged as potential materials for the new generation of photovoltaic cells due to a unique combination of optical, excitonic and electrical properties. Inspired by sensitization techniques on TiO₂ substrates (DSSC), CH₃NH₃PbBr₃ and CH₃NH₃PbI₃ perovskites were studied as a light-absorbing layer as well as an electron–hole pair generator. Photovoltaic cells based on per-ovskites have electron and hole transport layers (ETL and HTL, respectively), separated by an ac-tive layer composed of perovskite itself. Major advances subsequently came in the preparation methods of these devices and the development of different architectures, which resulted in an efficiency exceeding 23% in less than 10 years. Problems with stability are the main barrier to the large-scale production of hybrid perovskites. Partially or fully inorganic perovskites appear promising to circumvent the instability problem, among which the black perovskite phase CsPbI₃ (α-CsPbI₃) can be highlighted. In more advanced studies, a partial or total substitution of Pb by Ge, Sn, Sb, Bi, Cu or Ti is proposed to mitigate potential toxicity problems and maintain device efficiency. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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14 pages, 3706 KiB  

Open AccessArticle

Synergistic Zinc(II) and Formate Doping of Perovskites: Thermal Phase Stabilization of α-FAPbI₃ and Enhanced Photoluminescence Lifetime of FA_0.8MA_0.2PbI₃ up to 3.7 µs

by Merk M. Hoeksma and René M. Williams

Molecules 2024, 29(2), 516; https://doi.org/10.3390/molecules29020516 - 20 Jan 2024

Viewed by 1415

Abstract

Adding zinc (II) cations and formate anions improves the thermal phase stability of α-FAPbI₃ materials, and the spin-coated thin films of such doped FAPbI₃ (produced using MACl) show an increased emission lifetime of up to 3.7 μs on quartz (for FA [...] Read more.

Adding zinc (II) cations and formate anions improves the thermal phase stability of α-FAPbI₃ materials, and the spin-coated thin films of such doped FAPbI₃ (produced using MACl) show an increased emission lifetime of up to 3.7 μs on quartz (for FA_0.8MA_0.2PbI₃). This work investigates the effects of zinc and formate on the phase stability and time-resolved photoluminescence of FAPbI₃ perovskites for solar cell applications. Perovskite samples with varying concentrations of zinc and formate were made by incorporating different amounts of zinc formate and zinc iodide and were characterized with XRD. Doping levels of 1.7% Zn(II) and 1.0% formate (relative to Pb) seem optimal. The thermal phase stability of the doped perovskite powders (FAPbI₃) and thin films (FA_0.8MA_0.2PbI₃) was assessed. XRD of the thin films after 6 months shows only the alpha-phase. The time-resolved photoluminescence spectroscopy of the doped spin-coated perovskite samples (FA_0.8MA_0.2PbI₃ produced using MACl) is reported. The results show that synergy between an anionic and a cationic dopant can take place, making the perovskite thermally more phase-stable (not converting to the yellow delta-phase) with a longer charge carrier lifetime. In order to produce good thin films by spin coating, the use of MACl was essential. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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11 pages, 1851 KiB  

Open AccessArticle

Numerical Simulation and Performance Optimization of a Solar Cell Based on WO₃/CdTe Heterostructure Using NiO as HTL Layer by SCAPS 1D

by José Carlos Zepeda Medina, Enrique Rosendo Andrés, Crisóforo Morales Ruíz, Eduardo Camacho Espinosa, Leticia Treviño Yarce, Reina Galeazzi Isasmendi, Román Romano Trujillo, Godofredo García Salgado, Antonio Coyopol Solis and Fabiola Gabriela Nieto Caballero

Coatings 2023, 13(8), 1436; https://doi.org/10.3390/coatings13081436 - 15 Aug 2023

Cited by 6 | Viewed by 2047

Abstract

In this paper, a solar cell based on ${\mathrm{W}\mathrm{O}}_3$/CdTe heterojunction was analyzed and optimized, for which the following structure of the Al/AZO/${\mathrm{W}\mathrm{O}}_3$/CdTe/NiO/Ni device was proposed, which was numerically simulated by the SCAPS 1-D software. Using the [...] Read more.

In this paper, a solar cell based on ${\mathrm{W}\mathrm{O}}_3$/CdTe heterojunction was analyzed and optimized, for which the following structure of the Al/AZO/${\mathrm{W}\mathrm{O}}_3$/CdTe/NiO/Ni device was proposed, which was numerically simulated by the SCAPS 1-D software. Using the software, the effect of the thickness and carrier concentration of the absorber layer (CdTe) and the window layer (${\mathrm{W}\mathrm{O}}_3$) was analyzed, and the optimal value of these parameters was found to be 2 µm and ${10}^{15}{\mathrm{c}\mathrm{m}}^{-3}$ for the CdTe layer and 10 nm and ${10}^{19}{\mathrm{c}\mathrm{m}}^{-3}$ for the ${\mathrm{W}\mathrm{O}}_3$ layer, respectively. The influence of the defect density of the ${\mathrm{W}\mathrm{O}}_3$/CdTe interface on the performance of the proposed cell was also analyzed, simulating from ${10}^{10}$ to ${10}^{16}$ ${\mathrm{c}\mathrm{m}}^{-2}$, obtaining better device performance at lower interface defect density. Another parameter analyzed was the operating temperature on the photovoltaic performance of the device, observing that the solar cell has a better performance at lower temperatures. Finally, a maximum optimized PCE of 19.87% is obtained with a V_oc = 0.85 V, J_sc = 28.45 $\mathrm{m}\mathrm{A}/{\mathrm{c}\mathrm{m}}^2$, and FF = 82.03%, which makes the ${\mathrm{W}\mathrm{O}}_3$/CdTe heterojunction an interesting alternative for the development of CdTe-based solar cells. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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12 pages, 5450 KiB  

Open AccessArticle

Antimony Selenide Solar Cells Fabricated by Hybrid Reactive Magnetron Sputtering

by Daniel Brito, Pedro Anacleto, Ana Pérez-Rodríguez, José Fonseca, Pedro Santos, Marina Alves, Alessandro Cavalli, Deepanjan Sharma, Marcel S. Claro, Nicoleta Nicoara and Sascha Sadewasser

Nanomaterials 2023, 13(15), 2257; https://doi.org/10.3390/nano13152257 - 5 Aug 2023

Cited by 3 | Viewed by 1709

Abstract

The fabrication of Sb₂Se₃ thin-film solar cells deposited by a pulsed hybrid reactive magnetron sputtering (PHRMS) was proposed and examined for different growth conditions. The influence of growth temperature and Se pulse period were studied in terms of morphology, crystal [...] Read more.

The fabrication of Sb₂Se₃ thin-film solar cells deposited by a pulsed hybrid reactive magnetron sputtering (PHRMS) was proposed and examined for different growth conditions. The influence of growth temperature and Se pulse period were studied in terms of morphology, crystal structure, and composition. The Sb₂Se₃ growth showed to be dependent on the growth temperature, with a larger crystal size for growth at 270 °C. By controlling the Se pulse period, the crystal structure and crystal size could be modified as a function of the supplied Se amount. The solar cell performance for Sb₂Se₃ absorbers deposited at various temperatures, Se pulse periods and thicknesses were assessed through current-voltage characteristics. A power conversion efficiency (PCE) of 3.7% was achieved for a Sb₂Se₃ solar cell with 900 nm thickness, Sb₂Se₃ deposited at 270 °C and Se pulses with 0.1 s duration and period of 0.5 s. Finally, annealing the complete solar cell at 100 °C led to a further improvement of the V_oc, leading to a PCE of 3.8%, slightly higher than the best reported Sb₂Se₃ solar cell prepared by sputtering without post-selenization. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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32 pages, 13770 KiB  

Open AccessReview

Hole Transport Materials for Tin-Based Perovskite Solar Cells: Properties, Progress, Prospects

by Xinyao Chen, Jin Cheng, Linfeng He, Longjiang Zhao, Chunqian Zhang, Aiying Pang and Junming Li

Molecules 2023, 28(9), 3787; https://doi.org/10.3390/molecules28093787 - 28 Apr 2023

Cited by 6 | Viewed by 3926

Abstract

The power conversion efficiency of modern perovskite solar cells has surpassed that of commercial photovoltaic technology, showing great potential for commercial applications. However, the current high-performance perovskite solar cells all contain toxic lead elements, blocking their progress toward industrialization. Lead-free tin-based perovskite solar [...] Read more.

The power conversion efficiency of modern perovskite solar cells has surpassed that of commercial photovoltaic technology, showing great potential for commercial applications. However, the current high-performance perovskite solar cells all contain toxic lead elements, blocking their progress toward industrialization. Lead-free tin-based perovskite solar cells have attracted tremendous research interest, and more than 14% power conversion efficiency has been achieved. In tin-based perovskite, Sn²⁺ is easily oxidized to Sn⁴⁺ in air. During this process, two additional electrons are introduced to form a heavy p-type doping perovskite layer, necessitating the production of hole transport materials different from that of lead-based perovskite devices or organic solar cells. In this review, for the first time, we summarize the hole transport materials used in the development of tin-based perovskite solar cells, describe the impact of different hole transport materials on the performance of tin-based perovskite solar cell devices, and summarize the recent progress of hole transport materials. Lastly, the development direction of lead-free tin-based perovskite devices in terms of hole transport materials is discussed based on their current development status. This comprehensive review contributes to the development of efficient, stable, and environmentally friendly tin-based perovskite devices and provides guidance for the hole transport layer material design. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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10 pages, 2942 KiB  

Open AccessArticle

Investigation on Preparation and Performance of High Ga CIGS Absorbers and Their Solar Cells

by Xiaoyu Lv, Zilong Zheng, Ming Zhao, Hanpeng Wang and Daming Zhuang

Materials 2023, 16(7), 2806; https://doi.org/10.3390/ma16072806 - 31 Mar 2023

Cited by 2 | Viewed by 2033

Abstract

Tandem solar cells usually use a wide band gap absorber for top cell. The band gap of CuIn_(1−x)Ga_xSe₂ can be changed from 1.04 eV to 1.68 eV with the ratio of Ga/(In+Ga) from 0 to 1. When the [...] Read more.

Tandem solar cells usually use a wide band gap absorber for top cell. The band gap of CuIn_(1−x)Ga_xSe₂ can be changed from 1.04 eV to 1.68 eV with the ratio of Ga/(In+Ga) from 0 to 1. When the ratio of Ga/(In+Ga) is over 0.7, the band gap of CIGS absorber is over 1.48 eV. CIGS absorber with a high Ga content is a possible candidate one for the top cell. In this work, CuInGa precursors were prepared by magnetron sputtering with CuIn and CuGa targets, and CIGS absorbers were prepared by selenization annealing. The Ga/(In+Ga) is changed by changing the thickness of CuIn and CuGa layers. Additionally, CIGS solar cells were prepared using CdS buffer layer. The effects of Ga content on CIGS thin film and CIGS solar cell were studied. The band gap was measured by PL and EQE. The results show that using structure of CuIn/CuGa precursors can make the band gap of CIGS present a gradient band gap, which can obtain a high open circuit voltage and high short circuit current of the device. With the decrease in Ga content, the efficiency of the solar cell increases gradually. Additionally, the highest efficiency of the CIGS solar cells is 11.58% when the ratio of Ga/(In+Ga) is 0.72. The value of Voc is 702 mV. CIGS with high Ga content shows a great potential for the top cell of the tandem solar cell. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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15 pages, 5418 KiB  

Open AccessArticle

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe₂ Layer Formation at the CIGSe/Mo Hetero-Interface

by Fazliyana ‘Izzati Za’abar, Ahmad Wafi Mahmood Zuhdi, Camellia Doroody, Puvaneswaran Chelvanathan, Yulisa Yusoff, Siti Fazlili Abdullah, Mohd. Shaparuddin Bahrudin, Wan Sabeng Wan Adini, Ibrahim Ahmad, Wan Syakirah Wan Abdullah and Nowshad Amin

Materials 2023, 16(6), 2497; https://doi.org/10.3390/ma16062497 - 21 Mar 2023

Cited by 6 | Viewed by 1900

Abstract

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe₂ interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the [...] Read more.

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe₂ interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 Ω/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe₂, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe₂ layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe₂. The CIGSe/Mo hetero-contact, including the MoSe₂ layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe₂ layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe₂ thickness. Consequently, it addresses the importance of MoSe₂ structural properties for improved CIGSe solar cell performance and stability. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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16 pages, 12837 KiB  

Open AccessArticle

Optical Absorption in N-Dimensional Colloidal Quantum Dot Arrays: Influence of Stoichiometry and Applications in Intermediate Band Solar Cells

by Rebeca V. H. Hahn, Salvador Rodríguez-Bolívar, Panagiotis Rodosthenous, Erik S. Skibinsky-Gitlin, Marco Califano and Francisco M. Gómez-Campos

Nanomaterials 2022, 12(19), 3387; https://doi.org/10.3390/nano12193387 - 27 Sep 2022

Cited by 2 | Viewed by 1673

Abstract

We present a theoretical atomistic study of the optical properties of non-toxic InX (X = P, As, Sb) colloidal quantum dot arrays for application in photovoltaics. We focus on the electronic structure and optical absorption and on their dependence on array dimensionality and [...] Read more.

We present a theoretical atomistic study of the optical properties of non-toxic InX (X = P, As, Sb) colloidal quantum dot arrays for application in photovoltaics. We focus on the electronic structure and optical absorption and on their dependence on array dimensionality and surface stoichiometry motivated by the rapid development of experimental techniques to achieve high periodicity and colloidal quantum dot characteristics. The homogeneous response of colloidal quantum dot arrays to different light polarizations is also investigated. Our results shed light on the optical behaviour of these novel multi-dimensional nanomaterials and identify some of them as ideal building blocks for intermediate band solar cells. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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