Article Versions Notes

Al-Hardan NH, Abdul Hamid MA, Ahmed NM, Jalar A, Shamsudin R, Othman NK, Kar Keng L, Chiu W, Al-Rawi HN. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors. 2016; 16(6):839. https://doi.org/10.3390/s16060839

Al-Hardan, Naif H., Muhammad Azmi Abdul Hamid, Naser M. Ahmed, Azman Jalar, Roslinda Shamsudin, Norinsan Kamil Othman, Lim Kar Keng, Weesiong Chiu, and Hamzah N. Al-Rawi. 2016. "High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor" Sensors 16, no. 6: 839. https://doi.org/10.3390/s16060839

Al-Hardan, N. H., Abdul Hamid, M. A., Ahmed, N. M., Jalar, A., Shamsudin, R., Othman, N. K., Kar Keng, L., Chiu, W., & Al-Rawi, H. N. (2016). High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors, 16(6), 839. https://doi.org/10.3390/s16060839