Article Versions Notes

Liu L-Y, Wang L, Jin P, Liu J-L, Zhang X-P, Chen L, Zhang J-F, Ouyang X-P, Liu A, Huang R-H, et al. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm². Sensors. 2017; 17(10):2334. https://doi.org/10.3390/s17102334

Liu, Lin-Yue, Ling Wang, Peng Jin, Jin-Liang Liu, Xian-Peng Zhang, Liang Chen, Jiang-Fu Zhang, Xiao-Ping Ouyang, Ao Liu, Run-Hua Huang, and et al. 2017. "The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²" Sensors 17, no. 10: 2334. https://doi.org/10.3390/s17102334

Liu, L. -Y., Wang, L., Jin, P., Liu, J. -L., Zhang, X. -P., Chen, L., Zhang, J. -F., Ouyang, X. -P., Liu, A., Huang, R. -H., & Bai, S. (2017). The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm². Sensors, 17(10), 2334. https://doi.org/10.3390/s17102334