Tseng, A.C.; Lynall, D.; Savelyev, I.; Blumin, M.; Wang, S.; Ruda, H.E.
Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors. Sensors 2017, 17, 1640.
https://doi.org/10.3390/s17071640
AMA Style
Tseng AC, Lynall D, Savelyev I, Blumin M, Wang S, Ruda HE.
Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors. Sensors. 2017; 17(7):1640.
https://doi.org/10.3390/s17071640
Chicago/Turabian Style
Tseng, Alex C., David Lynall, Igor Savelyev, Marina Blumin, Shiliang Wang, and Harry E. Ruda.
2017. "Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors" Sensors 17, no. 7: 1640.
https://doi.org/10.3390/s17071640
APA Style
Tseng, A. C., Lynall, D., Savelyev, I., Blumin, M., Wang, S., & Ruda, H. E.
(2017). Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors. Sensors, 17(7), 1640.
https://doi.org/10.3390/s17071640