Article Versions Notes

Cheng J, He J, Pu C, Liu C, Huang X, Zhang D, Yan H, Chu PK. MoS₂ Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness. Energies. 2022; 15(17):6169. https://doi.org/10.3390/en15176169

Cheng, Jinbing, Junbao He, Chunying Pu, Congbin Liu, Xiaoyu Huang, Deyang Zhang, Hailong Yan, and Paul K. Chu. 2022. "MoS₂ Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness" Energies 15, no. 17: 6169. https://doi.org/10.3390/en15176169

Cheng, J., He, J., Pu, C., Liu, C., Huang, X., Zhang, D., Yan, H., & Chu, P. K. (2022). MoS₂ Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness. Energies, 15(17), 6169. https://doi.org/10.3390/en15176169